Download or read book High Performance Hydrogenated Amorphous Silicon Thin film Transistor Structure written by Chun-Ying Chen and published by . This book was released on 1997 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors Amorphous silicon thin film transistors written by Yue Kuo and published by Kluwer Academic Pub. This book was released on 2004 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book The Performance and Stability of Hydrogenated Amorphous Silicon Thin Film Transistors written by Francis John Clough and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin film transistors 1 Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Amorphous Silicon Thin Film Transistors written by Zoubeida Hafdi and published by Springer Nature. This book was released on 2023-03-03 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the basic elements that readers need to know about amorphous silicon material and a-Si:H TFTs. It includes the main principles of the transistors operation, modeling and applications. Fundamentals about transport mechanisms in a-Si:H TFTs and the associated electronic properties are introduced and extended to design examples and strategies to build reliable, large-area, performance optimized circuits. The book also reviews the effect of the amorphous silicon nature and how it impacts the transistors properties and their relevant applications. Fundamentals are made as simple as possible to be easily grasped as they cover everything expected to be important for an easy understanding of the introduced concepts. The author’s approach is geared toward undergraduate and graduate students, but the content is also appropriate for circuit simulator developers, integrated circuit designers and manufacturers, as well as everyone engaged in work on large area integrated circuit technologies and photovoltaics.
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Download or read book Hydrogenated Amorphous Silicon Thin Film Transistors written by Liang Quan Sun and published by . This book was released on 1995 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors written by Cherie R. Kagan and published by CRC Press. This book was released on 2003-02-25 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.
Download or read book Fabrication and Modeling of Ambipolar Hydrogenated Amorphous Silicon Thin Film Transistors written by Harold F Bare (Jr) and published by . This book was released on 1986 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) has been studied extensively for several years. Its application as a switching element in large area liquid crystal display arrays has been demonstrated. Modeling studies have been performed to quantify and explain the performance of the a-Si:H TFT. However, throughout these investigations little has been reported concerning the ambipolar nature of the a-Si:H TFT; that is, the ability of the device to operate alternatively as an n-channel or a p-channel device. The work described in this thesis extends the previous by specifically addressing the ambipolar behavior of the a-Si:H TFT. In particular, a process sequence has been developed to fabricate high quality ambipolar a-Si:H TFTs with emphasis on ohmic source/drain contacts. Using experimental data from these devices and TFT theory, a model has been developed for obtaining the output drain current vs. drain voltage of ambipolar a-Si:H TFTs. The model involves the numerical integration of an interpolated sheet conductance function. By using the appropriate flat-band voltage, the model accurately predicts the experimental output drain current characteristics for both n- and p-type operation over many orders of magnitude.
Download or read book Nanocrystalline Silicon Thin Film Transistor written by Mohammad-Reza Esmaeili-Rad and published by . This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) has been used in active matrix liquid crystal displays (LCDs) and medical x-ray imagers, in which the TFT acts as pixel switches. However, instability of a-Si:H TFT is a major issue in applications where TFTs are also required to function as analogue circuit elements, such as in emerging organic light emitting diode (OLED) displays. It is known that a-Si:H TFT shows drain current degradation under electrical operation, due to two instability mechanisms: (i) defect creation in the a-Si:H active layer, and (ii) charge trapping in the gate dielectric. Nanocrystalline silicon (nc-Si) TFT has been proposed as a high performance alternative. Therefore, this thesis focuses on the design of nc-Si TFT and its outstanding issues, in the industry standard bottom-gate structure. The key for obtaining a stable TFT lies in developing a highly crystalline nc-Si active layer, without the so-called amorphous incubation layer. Therefore, processing of nc-Si by plasma enhanced chemical vapor deposition (PECVD) is studied and PECVD parameters are optimized.
Download or read book Technology and Applications of Amorphous Silicon written by Robert A. Street and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Download or read book Amorphous Silicon Thin Film Transistor as Nonvolatile Device written by Helinda Nominanda and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: N-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended high-temperature annealing and gate-bias stress. High-performance CMOS-type a-Si:H TFTs can be fabricated with this plasma etching method. Electrical characteristics of a-Si:H TFTs after Co-60 irradiation and at different experimental stages have been measured. The gamma-ray irradiation damaged bulk films and interfaces and caused the shift of the transfer characteristics to the positive voltage direction. The field effect mobility, on/off current ratio, and interface state density of the TFTs were deteriorated by the irradiation process. Thermal annealing almost restored the original state's characteristics. Floating gate n-channel a-Si:H TFT nonvolatile memory device with a thin a- Si:H layer embedded in the SiNx gate dielectric layer has been prepared and studied. The hysteresis of the TFT's transfer characteristics has been used to demonstrate its memory function. A steady threshold voltage change between the "0" and "1" states and a large charge retention time of> 3600 s with the "write" and "erase" gap of 0.5 V have been detected. Charge storage is related to properties of the embedded a-Si:H layer and its interfaces in the gate dielectric structure. Discharge efficiencies with various methods, i.e., thermal annealing, negative gate bias, and light exposure, separately, were investigated. The charge storage and discharge efficiency decrease with the increase of the drain voltage under a dynamic operation condition. Optimum operating temperatures are low temperature for storage and higher temperature for discharge. a-Si:H metal insulator semiconductor (MIS) capacitor with a thin a-Si:H film embedded in the silicon nitride gate dielectric stack has been characterized for memory functions. The hysteresis of the capacitor's current-voltage and capacitance-voltage curves showed strong charge trapping and detrapping phenomena. The 9 nm embedded a-Si:H layer had a charge storage capacity six times that of the capacitor without the embedded layer. The nonvolatile memory device has potential for low temperature circuit applications.
Download or read book Modeling and Applications of Hydrogenated Amorphous Silicon Thin Film Transistors written by Kyo Young Chung and published by . This book was released on 1987 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization Modeling and Simulation of Hydrogenated Amorphous Silicon Thin Film Transistor Memory written by Jeromeo E. Cobbs and published by . This book was released on 1996 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metastable Phenomena in Hydrogenated Amorphous Silicon Thin Film Transistors written by Peter Neil Morgan and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Heterogeneous Silicon Thin Films written by and published by . This book was released on 2002 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polycrystalline Silicon Thin film Transistor Technology for Flexible Large area Electronics written by Yeh-Jiun Tung and published by . This book was released on 2001 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
