Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Download or read book Germanium Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Download or read book Interface engineered Ge MOSFETs for Future High Performance CMOS Applications written by Duygu Kuzum and published by Stanford University. This book was released on 2009 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.
Download or read book High Mobility and Quantum Well Transistors written by Geert Hellings and published by Springer Science & Business Media. This book was released on 2013-03-25 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book The Source Drain Engineering of Nanoscale Germanium based MOS Devices written by Zhiqiang Li and published by Springer. This book was released on 2016-03-24 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Download or read book High Purity Silicon 11 written by E. Simoen and published by The Electrochemical Society. This book was released on 2010-10 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿High Purity Silicon 11¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Download or read book Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods Processes Properties and Applications written by Filipe Vaz and published by Bentham Science Publishers. This book was released on 2013-06-21 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxynitride thin film technology is rapidly impacting a broad spectrum of applications, ranging from decorative functions (through optoelectronics) to corrosion resistance. Developing a better understanding of the relationships between deposition processes, structure and composition of the deposited films is critical to the continued evolution of these applications. This e-book provides valuable information about the process modeling, fabrication and characterization of metallic oxynitride-based thin films produced by reactive sputtering and some related deposition processes. Its contents are spread in twelve main and concise chapters through which the book thoroughly reviews the bases of oxynitride thin film technology and deposition processes, sputtering processes and the resulting behaviors of these oxynitride thin films. More importantly, the solutions for the growth of oxynitride technology are given in detail with an emphasis on some particular compounds. This is a valuable resource for academic learners studying materials science and industrial coaters, who are concerned not only about fundamental aspects of oxynitride synthesis, but also by their innate material characteristics.
Download or read book CMOS Past Present and Future written by Henry Radamson and published by Woodhead Publishing. This book was released on 2018-04-03 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. - Addresses challenges and opportunities for the use of CMOS - Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components - Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities
Download or read book Comprehensive Nanoscience and Technology written by and published by Academic Press. This book was released on 2010-10-29 with total page 2785 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the Introduction: Nanotechnology and its underpinning sciences are progressing with unprecedented rapidity. With technical advances in a variety of nanoscale fabrication and manipulation technologies, the whole topical area is maturing into a vibrant field that is generating new scientific research and a burgeoning range of commercial applications, with an annual market already at the trillion dollar threshold. The means of fabricating and controlling matter on the nanoscale afford striking and unprecedented opportunities to exploit a variety of exotic phenomena such as quantum, nanophotonic and nanoelectromechanical effects. Moreover, researchers are elucidating new perspectives on the electronic and optical properties of matter because of the way that nanoscale materials bridge the disparate theories describing molecules and bulk matter. Surface phenomena also gain a greatly increased significance; even the well-known link between chemical reactivity and surface-to-volume ratio becomes a major determinant of physical properties, when it operates over nanoscale dimensions. Against this background, this comprehensive work is designed to address the need for a dynamic, authoritative and readily accessible source of information, capturing the full breadth of the subject. Its six volumes, covering a broad spectrum of disciplines including material sciences, chemistry, physics and life sciences, have been written and edited by an outstanding team of international experts. Addressing an extensive, cross-disciplinary audience, each chapter aims to cover key developments in a scholarly, readable and critical style, providing an indispensible first point of entry to the literature for scientists and technologists from interdisciplinary fields. The work focuses on the major classes of nanomaterials in terms of their synthesis, structure and applications, reviewing nanomaterials and their respective technologies in well-structured and comprehensive articles with extensive cross-references. It has been a constant surprise and delight to have found, amongst the rapidly escalating number who work in nanoscience and technology, so many highly esteemed authors willing to contribute. Sharing our anticipation of a major addition to the literature, they have also captured the excitement of the field itself in each carefully crafted chapter. Along with our painstaking and meticulous volume editors, full credit for the success of this enterprise must go to these individuals, together with our thanks for (largely) adhering to the given deadlines. Lastly, we record our sincere thanks and appreciation for the skills and professionalism of the numerous Elsevier staff who have been involved in this project, notably Fiona Geraghty, Megan Palmer and Greg Harris, and especially Donna De Weerd-Wilson who has steered it through from its inception. We have greatly enjoyed working with them all, as we have with each other.
Download or read book SiGe Ge and Related Compounds 3 Materials Processing and Devices written by David Harame and published by The Electrochemical Society. This book was released on 2008 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Download or read book Semiconductor Devices and Technologies for Future Ultra Low Power Electronics written by D. Nirmal and published by CRC Press. This book was released on 2021-12-09 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Download or read book Advanced Short time Thermal Processing for Si based CMOS Devices 2 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2004 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
