Download or read book Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering written by Renjie Wang and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.

Download or read book High Mobility Single crystalline like Si and Ge Thin Films on Flexible Substrates by Roll to roll Vapor Deposition Processes written by Ying Gao and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The widespread use of high efficiency III–V multi-junction solar cells is limited by the cost and brittleness of Ge wafers that are used as templates for epitaxial growth. In order to provide an affordable and scalable bottom template, this work aims to achieve epitaxial growth of Ge and Si films on inexpensive and flexible substrates by roll-to-roll continuous deposition. These single-crystalline-like Si and Ge thin films on metal substrates can also be utilized in high mobility thin film transistors (TFTs) well beyond the realm of present-day TFTs based on amorphous Si and organic materials. The strategy of “seed and epitaxy” was employed for epitaxial growth of Ge and Si films. It consists of an initial growth of biaxially-textured seed layer on a flexible non-crystalline substrate by ion beam assisted deposition (IBAD) followed by a deposition of lattice and thermally-matched epitaxial layers. In epi-Ge growth, the epitaxial buffer stack of “CeO2/LaMnO3/MgO” was grown on IBAD MgO seed template by roll-to-roll magnetron sputtering. Single-crystalline-like Ge films was epitaxially grown on the CeO2-buffered templates by medium frequency magnetron sputtering or plasma enhanced chemical vapor deposition with carrier mobility values as high as 1100 cm2/V·s, which is about 1000 times higher than that of amorphous Ge. These epi-Ge templates were successfully utilized to grown n- or p-type single-crystalline GaAs thin films by metal organic chemical vapor deposition which have been used to fabricate solar cells. Moreover, the epi-Si thin films were also grown on this Ge template. The resulting n-type Si film is highly oriented along (004) direction with an electron mobility of 230 cm2/V-s. High performance TFTs fabricated on both single-crystalline-like n-Si channel on flexible metal substrate, and p-Ge on flexible glass substrate confirm the superior electronic quality of the grown films. The flexible TFT of n-Si (p-Ge) exhibits an on/off ratio of ~10E6 (10E6), a field-effect mobility of ~200 (105) cm2/V-s, and a threshold voltage of -0.7 (1.0) V. These devices with superior performance open up a new era toward the next-generation flexible electronics and optoelectronics.

Download or read book Biaxially Textured Germanium Thin Films on Flexible Metal Substrates by Radio Frequency Magnetron Sputtering written by Aarthi Sundaram and published by . This book was released on 2010 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heteroepitaxial Growth of Pt and Au Thin Films on MgO Single Crystals by Bias assisted Sputtering written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The crystallographic orientation of a metal affects its surface energy and structure, and has profound implications for surface chemical reactions and interface engineering, which are important in areas ranging from optoelectronic device fabrication to catalysis. However, it can be very difficult and expensive to manufacture, orient, and cut single crystal metals along different crystallographic orientations, especially in the case of precious metals. One approach is to grow thin metal films epitaxially on dielectric substrates. In this work, we report on growth of Pt and Au films on MgO single crystal substrates of (100) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices. We develop bias-assisted sputtering for deposition of oriented Pt and Au films with sub-nanometer roughness. We show that biasing the substrate decreases the substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 600 to 350 °C for Au, and from 750 to 550 °C for Pt, without use of transition metal seed layers. Additionally, this temperature can be further reduced by reducing the growth rate. Biased deposition with varying substrate bias power and working pressure also enables control of the film morphology and surface roughness.

Download or read book Heteroepitaxial Growth of Metal Thin Films on Chiral and Achiral Ceramic Substrates written by Andrew J. Francis and published by . This book was released on 2005 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book RHEED Transmission Mode and Pole Figures written by Gwo-Ching Wang and published by Springer Science & Business Media. This book was released on 2013-12-11 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also: Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figures RHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.

Download or read book Properties of Hydrogenated Amorphous Silicon germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering written by Samuel J. Levang and published by . This book was released on 2012 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using RF excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 4500 between 150 and 200°C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio between H bonded to Si and H bonded to Ge. The PA shows a systematic increase with increasing temperature, generally independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality is discussed.

Download or read book Metal Induced Growth of Si Thin Films and NiSi Nanowires written by and published by . This book was released on 2010 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film silicon has many useful purposes. Among the applications are solar cells and thin film transistors. This project involves a new and potentially lower cost method to produce thin silicon films. The method is called metal induced growth (MIG). A thin catalyst metal layer deposited on a foreign low cost substrate serves as the basis for growth of a nanocrystalline silicon thin film with thickness of 5-10 microns and preferred orientation of (220). The silicon deposition by magnetron sputtering on the heated substrate resulted in columnar structured grains having a diameter up to about 0.5 microns. Schottky barrier solar cells fabricated on these films gave a photocurrent of about 5 mA/sq cm and open circuit voltage of 0.25 volts. A modified process gave NiSi crystalline nanowires with length up to 10 microns and diameter of about 50 nm.

Download or read book The Structure and Physical Properties of Microcrystalline Silicon Germanium Alloys and Intrinsic Microcrystalline Silicon Thin Films by Reactive Magnetron Sputtering written by Seon-Mee Cho and published by . This book was released on 1995 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1995 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2566 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Materials Science of Thin Films written by Milton Ohring and published by Academic Press. This book was released on 1992 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: Prepared as a textbook complete with problems after each chapter, specifically intended for classroom use in universities.

Download or read book Semiconducting Silicides written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.

Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.

Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face