Download or read book Growth and Characterization of Indium 1 X Gallium x Arsenide y Phosphide 1 Y for Near Infrared Photodetectors written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1977 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1989 with total page 1016 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects and Transport Properties in Indium 1 X Gallium X Arsenide Y Phosphide 1 Y and Gallium 1 X Aluminium X Arsenide written by Joseph Weiyeh Ku and published by . This book was released on 1982 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1973 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book The Optical Characterization of Indium y Gallium 1 y Arsenic 1 x Nitrogen x written by Jamie Leigh Ramsey and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dilute Nitride materials, InGaAsN, are studied as promising candidates for optical devices in the telecommunications wavelength range between 1.3 and 1.55mum. Such materials can be grown lattice matched to a GaAs substrate and could remove the need to work with structures based on the InGaAsP/InP materials, which are expensive and have poor temperature performance. There are three main growth techniques for InGaAsN materials, chemical beam epitaxy (CBE), molecular beam epitaxy (MBE), and metal organic chemical vapour deposition (MOCVD). Of these three, MBE and MOCVD are used to grow the structures discussed in this thesis. X-ray diffraction and photoluminescence measurements are used for characterization. X-ray diffraction measurements provide the nitrogen concentration in the material, while photoluminescence measurements give the bandgap energy. The combination of these two results are then compared to the results from a band anti-crossing model that predicts the bandgap energy as a function of Nitrogen concentration. In addition, absorption and photoluminescence excitation measurements are used to investigate the Stokes shift in GaAsN material likely to have large composition non-uniformities. To illustrate the progress made with InGaAsN material growth, processing and characterisation, a broad area laser structure is demonstrated that emits around 1.3mum.

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Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Pressure Metalorganic Chemical Vapor Deposition and Characterization of Indium Phosphide and Indium Gallium Arsenide written by Robert Hickman and published by . This book was released on 1994 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Preparation of Single Crystal Gallium Arsenide 1 X Phosphide x for Semiconductor Device Research written by and published by . This book was released on 1965 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

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