Download or read book Formation of Titanium Silicide on Ion Implanted Silicon Substrate written by Yitzhak E. Gilboa and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Download or read book Silicon Devices written by Kenneth A. Jackson and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. This concise handbook deals with one of the most important topics for the electronics industry. World renowned authors have contributed to this unique overview of the processing of silicon and silicon devices.
Download or read book Rapid Thermal Processing written by Richard B. Fair and published by Academic Press. This book was released on 2012-12-02 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
Download or read book Advanced Applications of Ion Implantation written by Michael I. Current and published by . This book was released on 1985 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Application of Ion Beams in Materials Science written by Takashi Sebe and published by . This book was released on 1988 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2002 with total page 1512 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Ni Silicide Formation by Low Temperature induced Metal Atom Reaction with Ion Implanted Amorphous Silicon written by and published by . This book was released on 1992 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have extended our recent work on buried silicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si ion implantation has been investigated at temperature d"00C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), x-ray diffraction and four-point-probe measurements were used to determine structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360C for 8 hours followed by an additional step at 400C for one hour produces a continuos NiSi2 layer with a resistivity 44 [mu][Omega] cm.
Download or read book Symposium on Ion Implantation and Submicron Fabrication proceedings written by and published by . This book was released on 1984 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book An Investigation of Titanium Silicide Formation Using Ion Beam Mixing written by and published by . This book was released on 1986 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium on Thin Film Interfaces and Interactions written by John E. E. Baglin and published by . This book was released on 1980 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Download or read book ULSI Science and Technology 1989 written by C. M. Osburn and published by . This book was released on 1989 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ULSI Science and Technology 1987 written by S. Broydo and published by . This book was released on 1987 with total page 874 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Ion Implantation and Annealing of the Properties of Titianium Silicide Films on Silicon Substrates written by Leonard Michael Rubin and published by . This book was released on 1988 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
