Download or read book Fabrication and Scaling Effects of Very Short Gate length GaAs MESFETs written by James Anthony Adams and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Properties and Fabrication Techniques of Extremely short Gate Length GaAs Single gate and Dual gate MESFET s written by Pane-Chane Chao and published by . This book was released on 1983 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High speed Electronics and Device Scaling written by Lester F. Eastman and published by . This book was released on 1990 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electron Beam Technology in Microelectronic Fabrication written by George Brewer and published by Elsevier. This book was released on 2012-12-02 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron-Beam Technology in Microelectronic Fabrication presents a unified description of the technology of high resolution lithography. This book is organized into six chapters, each treating a major segment of the technology of high resolution lithography. The book examines topics such as the physics of interaction of the electrons with the polymer resist in which the patterns are drawn, the machines that generate and control the beam, and ways of applying electron-beam lithography in device fabrication and in the making of masks for photolithographic replication. Chapter 2 discusses fundamental processes by which patterns are created in resist masks. Chapter 3 describes electron-beam lithography machines, including some details of each of the major elements in the electron-optical column and their effect on the focused electron beam. Chapter 4 presents the use of electron-beam lithography to make discrete devices and integrated circuits. Chapter 5 looks at the techniques and economics of mask fabrication by the use of electron beams. Finally, Chapter 6 presents a comprehensive description and evaluation of the several high resolution replication processes currently under development. This book will be of great value to students and to engineers who want to learn the unique features of high resolution lithography so that they can apply it in research, development, or production of the next generation of microelectronic devices and circuits.
Download or read book Electrical Properties and Fabrication Techniques of Extremely short Gate Length Gallium arsenide Single gate and Dual gate MESFET S written by and published by . This book was released on 1983 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Design Fabrication and Characterization of 0 1 mu m GaAs MESFET s written by Karen Elizabeth Moore and published by . This book was released on 1994 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced III V Compound Semiconductor Growth Processing and Devices Volume 240 written by S. J. Pearton and published by Mrs Proceedings. This book was released on 1992-04-10 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Granular Nanoelectronics written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2013-12-14 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Download or read book Fabrication Properties and Applications of Low Dimensional Semiconductors written by M. Balkanski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.
Download or read book The Effects of Plasma Induced Damage on the Channel Layers of Ion Implanted GaAs MESFETs During Reactive Ion Etching RIE and Plasma Ashing Processes written by Hokyun Ahn and published by . This book was released on 2003 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during reactive ion etching and plasma ashing processes have been investigated. The plasma induced damage was characterized by sheet resistance measurement, X- ray photoelectron spectroscopy(XPS) and auger electron spectroscopy(AES) of different etched surfaces, compared with a chemically wet-etched reference surface. Also the effect of the plasma induced damage on the device performance was investigated. As a result, plasma ashing can deteriorate the plasma-induced damage by RIE.
Download or read book Design Fabrication and Performance Evaluation of Field Effect Transistors written by Tracy A. Abbott-Morse and published by . This book was released on 1997 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 1993 with total page 1112 pages. Available in PDF, EPUB and Kindle. Book excerpt: Theses on any subject submitted by the academic libraries in the UK and Ireland.
Download or read book Compound and Josephson High Speed Devices written by Takahiko Misugi and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
