Download or read book Fabrication and Characterization of Silicon Quantum Confined Diodes written by Amanda Margaret Bowhill and published by . This book was released on 1994 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Vacuum Field Emission Diodes on Silicon written by Ruijun Ren and published by . This book was released on 1992 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of N silicon Metal insulator semiconductor Diodes Containing a Photoanodically Grown Insulating Layer written by Mark Douglas Rosenblum and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination written by Ying Xu and published by . This book was released on 2015 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon photodetectors are widely used in the manufacture of consumer cameras and light sensors, their fabrication requires a large number of process steps, equipment and resources. In order to study novel device concepts, such as the inclusion of silicon nanowires, quantum-confinement, nanostructured moth-eye structures or on-chip optical filtering, we need control over critical fabrication steps, which is not possible if we rely only on commercially produced devices. In this work, we have designed, fabricated and characterized silicon photodiodes starting from bare silicon wafers to completely packaged chips. We considered two major configurations--front-side illuminated detectors on standard SSP silicon wafers, and back-side illuminated detectors with ultrathin DSP silicon wafers. Ion implantation process was used for creating the p-n junctions, but we also acquired a diffusion furnace and developed our own process for thermal diffusion from a solid source. We also fabricated silicon nanowires on the front side of the diodes using a gold metal-assisted chemical etching (MACE) process to examine their effects on the optical and electrical performances of the devices. The fabricated devices were tested on a probe station, and then they were packaged, wire-bonded and tested for optical responsivities and quantum efficiencies.
Download or read book Fabrication and Characterization of Superconductor semiconductor Diodes SSD an Millimeter Wave Detectors written by Norman Frank Raley and published by . This book was released on 1984 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Design Fabrication and Characterization of Silicon germanium Optoelectronic Devices Grown by Molecular Beam Epitaxy written by Nathan Anthony Sustersic and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, Ge and SiGe devices have been actively investigated for potential optoelectronic applications such as germanium solar cells for long wavelength absorption, quantum-dot intermediate band solar cells (IBSCs), quantum-dot infrared photodetectors (QDIPs) and germanium light-emitting diodes (LEDs). Current research into SiGe based optoelectronic devices is heavily based on nanostructures which employ quantum confinement and is at a stage where basic properties are being studied in order to optimize growth conditions necessary for incorporation into future devices. Ge and SiGe based devices are especially attractive due to ease of monolithic integration with current Si-based CMOS processing technology, longer carrier lifetime, and reduced phonon scattering. Defect formation and transformation was studied in SiGe layers grown on Si and Ge (100) substrates. The epitaxial layers were grown with molecular beam epitaxy (MBE) and characterized by X-ray measurements in order to study the accommodation of elastic strain energy in the layers. The accommodation of elastic strain energy specifies the amount of point defects created on the growth surface which may transform into extended crystalline defects in the volume of the layers. An understanding of crystalline defects in high lattice mismatched epitaxial structures is critical in order to optimize growth procedures so that epitaxial structures can be optimized for specific devices such as Ge based solar cells. Considering the optimization of epitaxial layers based on the structural transformation of point defects, Ge solar cells were fabricated and investigated using current-voltage measurements and quantum efficiency data. These Ge solar cells, optimized for long wavelength absorption, were fabricated to be employed in a bonded Ge/Si solar cell device. The doping of self-assembled Ge quantum dot structures grown on Si (100) was investigated using atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. This is of special interest for Ge quantum dots employed in active device structures where the effect of Ge dot and Si buffer layer doping on structural and luminescence properties must be well understood. Large Ge islands known as "superdomes" were fabricated by MBE and characterized by scanning electron microscopy (SEM), AFM, and Raman spectroscopy. These Ge nanostructures have the potential to become a direct material through band-structure modification by introducing moderate tensile strain into the Ge layer and band-filling. The results of this research on the growth, fabrication, and characterization of SiGe materials, structures, and devices may be useful for applications in the fields of energy, communication, computation, and remote sensing.
Download or read book Nanoelectronics written by R. T. Bate and published by . This book was released on 1987 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: Results of theoretical and experimental research on resonant tunneling diodes are reported. Of particular interest were the effects of restriction of the lateral dimensions of the device to achieve quantum confinement of electrons in all three dimensions. The theoretical efforts within this program were devoted to applying a quantum-transport approach to understanding the behavior of the resonant-tunneling diode. When this program began, there had been no demonstration of total spatial quantization in a fabricated semiconductor system. We pioneered work in this field by investigating the photoluminescence of laterally confined multiple quantum wells, known as 'quantum dots'. The results gave the first evidence for spatial quantization in a fabricated system and have stimulated considerable activity in the creation of microfabricated quantum structures. We undertook an extensive study of resonant tunneling in GaAs structures as a baseline approach. We investigated excited state resonant tunneling and were the first to show clear negative differential resistance because of resonant tunneling through excited states. We fabricated and electrically characterized quantum dot resonant tunneling structures. Effort was also expended on fabrication and characterization of silicon tunneling structures.
Download or read book Fabrication and Characterization of Silicon P plus N minus N plus Trapatt Diodes written by Robert Theodore Corbett and published by . This book was released on 1975 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Ion Implanted N superscript p Greek Letter Pi p superscript Silicon Read IMPATT Diodes written by Aditya Kumar Gupta and published by . This book was released on 1979 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Demand Bibliography written by and published by . This book was released on 1989 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Analysis of Silicon and Germanium P N Junction Alloy Diodes written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nanocrystals written by Lorenzo Pavesi and published by John Wiley & Sons. This book was released on 2010-02-02 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Fabrication and Characterization of Microcavity Organic Light Emitting Diodes written by Chi-Hang Cheung and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Schottky barrier Diodes for Mixer Applications written by James A. Griffin and published by . This book was released on 1979 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of III V Semiconductors Tunnel Diodes written by J.A. Saeed and published by . This book was released on 1993 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Silicon Field Emitter Arrays written by Aaron M. Brock and published by . This book was released on 2000 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
