Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Proceedings of the 11th International Conference on Robotics Vision Signal Processing and Power Applications written by Nor Muzlifah Mahyuddin and published by Springer Nature. This book was released on 2022-02-11 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceeding is a collection of research papers presented at the 11th International Conference on Robotics, Vision, Signal Processing & Power Applications (RoViSP 2021). The theme of RoViSP 2021 “Enhancing Research and Innovation through the Fourth Industrial Revolution (IR 4.0)” served as a platform for researchers, scientists, engineers, academicians as well as industrial professionals from all around the globe to present and exchange their research findings and development activities through oral presentations. The book covers various topics of interest, including: Robotics, Control, Mechatronics and Automation Telecommunication Systems and Applications Electronic Design and Applications Vision, Image and Signal Processing Electrical Power, Energy and Industrial Applications Computer and Information Technology Biomedical Engineering and Applications Intelligent Systems Internet-of-things Mechatronics Mobile Technology

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book Gan based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 2017 IEEE Compound Semiconductor Integrated Circuit Symposium CSICS written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Download or read book State of the Art Program on Compound Semiconductors XXXVII SOTAPOCS XXXVII and Narrow Bandgap Optoelectronic Materials and Devices written by P. C. Chang and published by The Electrochemical Society. This book was released on 2002 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication Performance and Degradation Mechanism of Aluminium i e Aluminum Gallium Nitride gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Information System Design Communication Networks and IoT written by Vikrant Bhateja and published by Springer Nature. This book was released on with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Growth and Characterization of AlGaN GaN High Electron Mobility Transistors written by Michael James Murphy and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Download or read book Sustainable Aviation written by T. Hikmet Karakoc and published by Springer. This book was released on 2016-07-20 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This expansive reference on the use of clean energy technologies in the aviation industry focuses on tools and solutions for maximizing the energy efficiency of aircrafts, airports, and other auxiliary components of air transit. Key topics range from predicting impacts of avionics and control systems to energy/exergy performance analyses of flight mechanics and computational fluid dynamics. The book includes findings both from experimental investigations and functional extant systems, ranging from propulsion technologies for aerospace vehicles to airport design to energy recovery systems. Engineers, researchers and students will benefit from the broad reach and numerous engineering examples provided.