Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by . This book was released on 1990-01-01 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electron Microscopy of Semiconducting Materials and ULSI Devices written by Clive Hayzelden and published by . This book was released on 1998 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first symposium on electron microscopy and materials for ultra-large scale integration (ULSI) at the Society's meeting attracted 34 papers by contributors from Asia, North America, and Europe. They cover specimen preparation and defect analysis in semiconductor devices; metallization, silicides, and diffusion barriers; the advanced characterization of ULSI structures, and semiconductor epitaxy and heterostructures. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book Nondestructive Evaluation of Semiconductor Materials and Devices written by J. Zemel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 791 pages. Available in PDF, EPUB and Kindle. Book excerpt: From September 19-29, a NATO Advanced Study Institute on Non destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub stantial immediate concern to the device technologies and end users.
Download or read book Microscopy of Semiconducting Materials 2007 written by A.G. Cullis and published by Springer Science & Business Media. This book was released on 2008-12-02 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Download or read book Advanced Electron Microscopy of Wide Band gap Semiconductor Materials written by Michael W. Fay and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Laura Lazzarini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Assessment and Development of Scanning Electron Microscopy in the Semiconductor Materials and Device Physics Field written by David Vernon Sulway and published by . This book was released on 1968 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microscopy of Semiconducting Materials 2001 written by A.G. Cullis and published by CRC Press. This book was released on 2018-01-18 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide. The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.
Download or read book Field Emission Scanning Electron Microscopy written by Nicolas Brodusch and published by Springer. This book was released on 2017-09-25 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights what is now achievable in terms of materials characterization with the new generation of cold-field emission scanning electron microscopes applied to real materials at high spatial resolution. It discusses advanced scanning electron microscopes/scanning- transmission electron microscopes (SEM/STEM), simulation and post-processing techniques at high spatial resolution in the fields of nanomaterials, metallurgy, geology, and more. These microscopes now offer improved performance at very low landing voltage and high -beam probe current stability, combined with a routine transmission mode capability that can compete with the (scanning-) transmission electron microscopes (STEM/-TEM) historically run at higher beam accelerating voltage
Download or read book Impact of Electron and Scanning Probe Microscopy on Materials Research written by David G. Rickerby and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Study Institute provided an opportunity for researchers in universities, industry and National and International Laboratories, from the disciplines ofmaterials science, physics, chemistry and engineering to meet together in an assessment of the impact of electron and scanning probe microscopy on advanced material research. Since these researchers have traditionally relied upon different approaches, due to their different scientific background, to advanced materials problem solving, presentations and discussion within the Institute sessions were initially devoted to developing a set ofmutually understood basic concepts, inherently related to different techniques ofcharacterization by microscopy and spectroscopy. Particular importance was placed on Electron Energy Loss Spectroscopy (EELS), Scanning Probe Microscopy (SPM), High Resolution Transmission and Scanning Electron Microscopy (HRTEM, HRSTEM) and Environmental Scanning Electron Microscopy (ESEM). It was recognized that the electronic structure derived directly from EELS analysis as well as from atomic positions in HRTEM or High Angle Annular Dark Field STEM can be used to understand the macroscopic behaviour of materials. The emphasis, however, was upon the analysis of the electronic band structure of grain boundaries, fundamental for the understanding of macroscopic quantities such as strength, cohesion, plasticity, etc.
Download or read book Microscopy of Semiconducting Materials written by A.G Cullis and published by CRC Press. This book was released on 2000-01-01 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots. This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Download or read book Microscopy of Semiconducting Materials 2003 written by A.G Cullis and published by CRC Press. This book was released on 2004-04-20 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
Download or read book Semiconductor Measurements and Instrumentation written by W. R. Runyan and published by McGraw Hill Professional. This book was released on 1998 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reference on semiconductor characterization tools, this volume offers explanations of the advanced and traditional techniques for evaluating different criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type.
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer. This book was released on 2003-07-03 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Download or read book Analytical Electron Microscopy for Materials Science written by DAISUKE Shindo and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analytical electron microscopy is one of the most powerful tools today for characterization of the advanced materials that support the nanotechnology of the twenty-first century. In this book the authors clearly explain both the basic principles and the latest developments in the field. In addition to a fundamental description of the inelastic scattering process, an explanation of the constituent hardware is provided. Standard quantitative analytical techniques employing electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy are also explained, along with elemental mapping techniques. Included are sections on convergent beam electron diffraction and electron holography utilizing the field emission gun. With generous use of illustrations and experimental data, this book is a valuable resource for anyone concerned with materials characterization, electron microscopy, materials science, crystallography, and instrumentation.
Download or read book Microscopy of Semiconducting Materials 1987 Proceedings of the Institute of Physics Conference Oxford University April 1987 written by A.G. Cullis and published by CRC Press. This book was released on 2021-02-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
