Download or read book Epitaxial Growth and Characterization of Oxide Based Ferromagnetic Semiconductors for Spintronics Applications written by Hyucksoo Yang and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The utilization of the spin as an additional degree of freedom to electronic transport opens a new field for novel electronic devices combined with magnetic and optical properties. Semiconductors doped with some amount of the magnetic element have been developed as an effective injector of spin-polarized carriers owing to a good electrical conductivity match with semiconductors to be hybridized.
Download or read book Epitaxial Growth of Complex Metal Oxides written by Gertjan Koster and published by Woodhead Publishing. This book was released on 2022-04-22 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth of Complex Metal Oxides, Second Edition reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications. This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites. - Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques - Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry - Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications
Download or read book Epitaxial Growth and Characterization of Cobalt doped Zinc Oxide and Cobalt doped Titanium Dioxide for Spintronic Applications written by Allan C. Tuan and published by . This book was released on 2003 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth Characterization and Application of Novel Wide Bandgap Oxide Semiconductors written by Jeremy West Mares and published by . This book was released on 2010 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films and structures grown by plasma-assisted molecular beam epitaxy. The two compounds of primary interest within this research are the ternary films Ni[subscript x]Mg1[subscript x]O and Zn[subscript x]Mg1[subscript x]0 and the investigation focuses predominantly on the realization, assessment and implementation of these two oxides as optoelectronic materials. The functioning hypothesis for this largely experimental effort has been that these cubic ternary oxides can be exploited--and possibly even juxtaposed--to realize novel wide band gap optoelectronic technologies. The results of the research conducted presented herein overwhelmingly support this hypothesis in that they confirm the possibility to grow these films with sufficient quality by this technique, as conjectured. Ni[subscript x]Mg1−[subscript x]O films with varying Nickel concentrations ranging from x = 0 to x = 1 have been grown on lattice matched MgO substrates (lattice mismatch [epsilon][less than]0.01) and characterized structurally, morphologically, optically and electrically. Similarly, cubic Zn[subscript x]Mg1−[subscript x]0 films with Zinc concentrations ranging from x = 0 to x[almost equal to]0.53, as limited by phase segregation, have also been grown and characterized. Photoconductive devices have been designed and fabricated from these films and characterized. Successfully engineered films in both categories exhibit the desired deep ultraviolet photoresponse and therefore verify the hypothesis. While the culminating work of interest here focuses on the two compounds discussed above, the investigation has also involved the characterization or exploitation of related films including hexagonal phase Zn[subscript x]Mg1−[subscript x]O, ZnO, Cd[subscript x]Zn1−[subscript x]O and hybrid structures based on these compounds used in conjunction with GaN. These works were critical precursors to the growth of cubic oxides, however, and are closely relevant. Viewed in its entirety, this document can therefore be considered a multifaceted interrogation of several novel oxide compounds and structures, both cubic and wurtzite in structure. The conclusions of the research can be stated succinctly as a quantifiably successful effort to validate the use of these compounds and structures for wide bandgap optoelectronic technologies.
Download or read book Integration of Functional Oxides with Semiconductors written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2014-02-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of Narrow Bandgap III V Semiconductors and Related Semimetals written by Sukgeun Choi and published by . This book was released on 2006 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Epitaxial Oxide Thin Films written by Ashish Garg and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Download or read book High Quality Molecular Beam Epitaxy Growth and Characterization of Lead Titanate Zirconate Based Complex oxides written by Xing Gu and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research interest in complex oxides has resurged owing to progress in modern epitaxial techniques. Among such oxides, lead-titanate-based thin films such as PbTiO3 (PTO) and Pb(ZrxTi1?x)O3 (PZT) offer attractive advantages for a wide variety of applications. Moreover, integration between functional oxides with compound semiconductors has the potential to realize multi-functional devices which enjoy the properties from both groups of materials. Ferroelectric materials with a perovskite structure (ABO3) and semiconductors such as GaN with a hexagonal structure, require a careful choice of a bridge layer and suitable epitaxial technique. Molecular beam epitaxy (MBE) has been an established technique in providing epitaxial growth with high crystal perfection and precise control over material composition. Single-crystal oxides grown by molecular beam epitaxy (MBE) can in principle avoid grain boundaries and provide a sharp interface as well. In this dissertation, the MBE growth mechanism of PZT was investigated. In-situ RHEED patterns indicate that the growth of PTO and PZT occur in a two-dimensional, layer by layer mode, as confirmed by a streaky pattern. The crystal quality of PTO, PZO, and PZT thin films prepared by MBE are evaluated by X-ray diffraction (XRD), and have a full width at half maximum (FWHM) value of 4 arcmin for an 80nm thick layer. Optical properties of the PTO thin films have been characterized by variable angle spectroscopic ellipsometry (VASE), and well resolved dielectric functions are extracted. The refractive index is determined as 2.605 at 633 nm, and bandgap energy as 3.778eV. The electrical properties of the PTO and PZT are evaluated by the measurement of polarization-field hysteresis loops, give a remanent polarization of 83 [mu]C/cm2 and a coercive field of 77 kV/cm. Lead oxide (PbO), titanium dioxide (TiO2), and zirconium dioxide (ZrO2), on GaN templates for potential PZT/GaN integration. The epitaxial growth of TiO2, PbO, and ZrO2 is realized on GaN templates for the first time by MBE. The PbO epitaxial layer was also used as a nucleation layer to enable single crystalline, perovskite PTO growth on GaN.
Download or read book Hybrid Epitaxial Structures for Spintronics written by J. De Boeck and published by . This book was released on 2002 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular beam epitaxy (MBE) has been used very successfully over the past 10 years to produce the most interesting spintronic heterostructures. This paper illustrates the strength of MBE in realizing materials combinations that can lead to efficient spin-injection. The paper is not an exhaustive description of all possible materials combinations, but a review of some important aspects of spin-source fabrication. In line with today's emphasis on demonstrating the spin-injection process in III-V (electroluminescent) semiconductor devices, the paper will focus on Gallium Arsenide-based (GaAs-based) epitaxial heterostructures. The first part of the paper describes the epitaxy of metallic ferromagnetic elements and alloys on GaAs. The authors review the results of initial experiments on Iron (Fe) and Cobalt (Co) epitaxy, since these materials are in the picture for Schottky barrier spin-injection devices today. Further, a brief description of Manganese-based (Mn) alloys is presented, justified by the wealth of possible Mn-III or Mn-V alloys that can be epitaxially grown on GaAs with various properties. This section is followed by a discussion of Gallium Manganese Arsenide (GaMnAs) as a ferromagnetic semiconductor and a summary of the results obtained recently on the epitaxial growth of Nickel Manganese Antimony (NiMnSb) on GaAs, a half-metallic magnetic alloy that has the potential to serve as a spin-source with 100% spin-polarization. The authors also briefly discuss some results on the realization of heterostructures, including two magnetic layers spaced by a semiconductor or vice versa. A very appealing class of materials for spintronics is that of magnetic semiconductors, illustrated in this paper by (Aluminum, Gallium) Manganese Arsenides (Al, Ga)MnAs. A concluding section deals with the contact strategies (ohmic, Schottky barrier, or tunnel barrier) for spin-injection reports in which the materials combinations play an important role. (9 figures, 94 refs.).
Download or read book Epitaxial Growth and Characterization of NiMnSb Layers for Novel Spintronic Devices written by Florian Lochner and published by . This book was released on 2011 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of II VI semiconductor One Dimensional Nanostructures and Thin Films written by Zuoming Zhu and published by . This book was released on 2006 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of Zinc Selenide Based Semiconductor Thin films written by Jarmo Lilja and published by . This book was released on 1990 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of Zn Mg O Thin Films written by Thomas Andreas Wassner and published by . This book was released on 2012 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Epitaxial Growth and Characterization of Multifunctional Heterostructures written by Swedesh Kumar Srivastava and published by . This book was released on 2008 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of Thin Films and Superlattices of Wide Band Gap II VI Semiconductors Grown by Pulsed Laser Deposition written by Shengxi Duan and published by . This book was released on 1994 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
