Download or read book Emerging Memories written by Betty Prince and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.

Download or read book Emerging Non Volatile Memories written by Seungbum Hong and published by Springer. This book was released on 2014-11-18 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Download or read book Emerging Memory Technologies written by Yuan Xie and published by Springer Science & Business Media. This book was released on 2013-10-21 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.

Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2015-08-05 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

Download or read book Flash Memories written by Detlev Richter and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Elsevier. This book was released on 2014-06-24 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Download or read book Prospective Memory written by Mark A. McDaniel and published by SAGE Publications. This book was released on 2007-02-15 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: While there are many books on retrospective memory, or remembering past events, Prospective Memory: An Overview and Synthesis of an Emerging Field is the first authored text to provide a straightforward and integrated foundation to the scientific study of memory for actions to be performed in the future. Authors Mark A. McDaniel and Gilles O. Einstein present an accessible overview and synthesis of the theoretical and empirical work in this emerging field. Key Features: Focuses on students rather than researchers: While there are many edited works on prospective memory, this is the first authored text written in an accessible style geared toward students. Provides a general approach for the controlled, laboratory study of prospective memory: The authors place issues and research on prospective memory within the context of general contemporary themes in psychology, such as the issue of the degree to which human behavior is mediated by controlled versus automatic processes. Investigates the cognitive processes that underlie prospective remembering: Examples are provided of event-based, time-based, and activity-based prospective memory tasks while subjects are engaged in ongoing activities to parallel day-to-day life. Suggests fruitful directions for further advancement: In addition to integrating what is now a fairly loosely connected theoretical and empirical field, this book goes beyond current work to encourage new theoretical insights. Intended Audience: This relatively brief book is an excellent supplemental text for advanced undergraduate and graduate courses such as Memory, Human Memory, and Learning & Memory in the departments of psychology and cognitive science.

Download or read book Memories for the Intelligent Internet of Things written by Betty Prince and published by John Wiley & Sons. This book was released on 2018-04-18 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of Things (IoT) technology continues to evolve and become increasingly common across an array of specialized and consumer product applications, the demand on engineers to design new generations of flexible, low-cost, low power embedded memories into IoT hardware becomes ever greater. This book helps them meet that demand. Coauthored by a leading international expert and multiple patent holder, this book gets engineers up to speed on state-of-the-art implementations of memory in IoT hardware. Memories for the Intelligent Internet of Things covers an array of common and cutting-edge IoT embedded memory implementations. Ultra-low-power memories for IoT devices-including plastic and polymer circuitry for specialized applications, such as medical electronics-are described. The authors explore microcontrollers with embedded memory used for smart control of a multitude of Internet devices. They also consider neuromorphic memories made in Ferroelectric RAM (FeRAM), Resistance RAM (ReRAM), and Magnetic RAM (MRAM) technologies to implement artificial intelligence (AI) for the collection, processing, and presentation of large quantities of data generated by IoT hardware. Throughout the focus is on memory technologies which are complementary metal oxide semiconductor (CMOS) compatible, including embedded floating gate and charge trapping EEPROM/Flash along with FeRAMS, FeFETs, MRAMs and ReRAMs. Provides a timely, highly practical look at state-of-the-art IoT memory implementations for an array of product applications Synthesizes basic science with original analysis of memory technologies for Internet of Things (IoT) based on the authors' extensive experience in the field Focuses on practical and timely applications throughout Features numerous illustrations, tables, application requirements, and photographs Considers memory related security issues in IoT devices Memories for the Intelligent Internet of Things is a valuable working resource for electrical engineers and engineering managers working in the electronics system and semiconductor industries. It is also an indispensable reference/text for graduate and advanced undergraduate students interested in the latest developments in integrated circuit devices and systems.

Download or read book Rad hard Semiconductor Memories written by Calligaro, Cristiano and published by River Publishers. This book was released on 2019-01-30 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies

Download or read book Emerging Memory written by Paul Bijl and published by Heritage and Memory Studies. This book was released on 2015 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dutch commentators repeatedly claim that their nation has forgotten its violent colonial past. In this compelling study, however, Paul Bijl demonstrates that photographs of colonial atrocities have appeared consistently in the Dutch public sphere and remain widely available in print, on television, and online. The nation, he argues, has not forgotten; rather, the Dutch have failed to absorb the meaning of these ubiquitous images and the scenes they depict. Ultimately, Bijl illuminates the shadowy zone between remembering and forgetting a zone populated by histories that do not correspond to the narratives we construct about the past.

Download or read book Repressed Memories written by Renee Fredrickson and published by Simon and Schuster. This book was released on 1992-07 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Buried memories of sexual abuse can have a devastating impact on a victim's relationships, work, and health. Using case histories, Renee Fredrickson stresses the importance of recovering these memories as a crucial step in healing, and she explains various therapeutic processes used in memory retrieval.

Download or read book Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer. This book was released on 2016-09-02 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Download or read book Frontiers in Materials Processing Applications Research and Technology written by M. Muruganant and published by Springer. This book was released on 2017-11-13 with total page 403 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises the select proceedings of FiMPART 2015. The volume covers advances in major areas of materials research under one umbrella. This volume covers all aspects of materials research, processing, fabrication, structure/property evaluation, applications of ferrous, non-ferrous, ceramic, polymeric materials and composites including biomaterials, materials for energy, fuel cells/hydrogen storage technologies, batteries, super-capacitors, nano-materials for energy and structural applications, aerospace structural metallic materials, bulk metallic glasses and other advanced materials. The book will be useful to researchers, students, and professional working in areas related to materials innovation and applications.

Download or read book The Unreality of Memory written by Elisa Gabbert and published by FSG Originals. This book was released on 2020-08-11 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Terror, disaster, memory, selfhood, happiness . . . leave it to a poet to tackle the unthinkable so wisely and so wittily."* A literary guide to life in the pre-apocalypse, The Unreality of Memory collects profound and prophetic essays on the Internet age’s media-saturated disaster coverage and our addiction to viewing and discussing the world’s ills. We stare at our phones. We keep multiple tabs open. Our chats and conversations are full of the phrase “Did you see?” The feeling that we’re living in the worst of times seems to be intensifying, alongside a desire to know precisely how bad things have gotten—and each new catastrophe distracts us from the last. The Unreality of Memory collects provocative, searching essays on disaster culture, climate anxiety, and our mounting collective sense of doom. In this new collection, acclaimed poet and essayist Elisa Gabbert explores our obsessions with disasters past and future, from the sinking of the Titanic to Chernobyl, from witch hunts to the plague. These deeply researched, prophetic meditations question how the world will end—if indeed it will—and why we can’t stop fantasizing about it. Can we avoid repeating history? Can we understand our moment from inside the moment? With The Unreality of Memory, Gabbert offers a hauntingly perceptive analysis of our new ways of being and a means of reconciling ourselves to this unreal new world. "A work of sheer brilliance, beauty and bravery.” *—Andrew Sean Greer, author of Less

Download or read book Future Memory written by P. M. H. Atwater and published by Hampton Roads Publishing. This book was released on 2013-01-01 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many different paths to the future. According to P.M.H. Atwater, one of the foremost investigators into near-death experiences, future memory allows people to "live" life in advance and remember the experience in detail when something triggers that memory. Atwater explains the unifying, and permanent, effect of that experience is a brain a "brain shift" which she believes "may be at the very core of existence itself." In Future Memory, Atwater shows that structural and chemical changes are occurring in our brains, changes indicative of higher evolutionary development. This mind-blowing exploration of a mind-blowing topic traces her findings about this phenomenon and explores its implications for the individual and for society. Future Memory: Provides a series of steps to assist in developing future memory Explores new models of time, existence, and consciousness Presents an in-depth study of the brain shift and how it can be experienced Offers an extensive appendix and resource manual Future Memory is an important step in understanding the relationship between human perception and reality.

Download or read book McGraw Hill Yearbook of Science and Technology 2010 written by McGraw-Hill Education and published by McGraw Hill Professional. This book was released on 2010-01-12 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes coverage of forefront fields such as cell and molecular biology, environmental science, genetics, information technology, nanotechnology, chemistry, and theoretical physics An extensive subject index makes finding information fast and easy Features numerous cross-references to the McGraw-Hill Encyclopedia of Science & Technology and bibliographies of key literature after each article 250+ images, diagrams, and tables enhance the text