Download or read book Elements of Doping Engineering in Semiconductors written by Sheng Bai Zhang and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Elements of Doping Engineering in Semiconductors written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum.
Download or read book Doping in III V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Download or read book Delta doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
Download or read book Doping Engineering for Front End Processing Volume 1070 written by Materials Research Society. Meeting Symposium E. and published by . This book was released on 2008-10-17 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Organic Thermoelectric Materials written by Zhiqun Lin and published by Royal Society of Chemistry. This book was released on 2019-10-18 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises the significant progress made in organic thermoelectric materials, focusing on effective routes to minimize thermal conductivity and maximize power factor.
Download or read book Guide To Semiconductor Engineering written by Jerzy Ruzyllo and published by World Scientific. This book was released on 2020-03-10 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Guide to Semiconductor Engineering is concerned with semiconductor materials, devices and process technologies which in combination constitute an enabling force behind the growth of our technical civilization. This book was conceived and written keeping in mind those who need to learn about semiconductors, who are professionally associated with select aspects of this technical domain and want to see it in a broader context, or for those who are simply interested in state-of-the-art semiconductor engineering. In its coverage of semiconductor properties, materials, devices, manufacturing technology, and characterization methods, this Guide departs from textbook-style, monothematic in-depth discussions of each topic. Instead, it considers the entire broad field of semiconductor technology and identifies synergistic interactions within various areas in one concise volume. It is a holistic approach to the coverage of semiconductor engineering which distinguishes this Guide among other books concerned with semiconductors related issues.
Download or read book Doping and Density of States Engineering for Organic Thermoelectrics written by Guangzheng Zuo and published by Linköping University Electronic Press. This book was released on 2018-05-14 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermoelectric materials can turn temperature differences directly into electricity. To use this to harvest e.g. waste heat with an efficiency that approaches the Carnot efficiency requires a figure of merit ZT larger than 1. Compared with their inorganic counterparts, organic thermoelectrics (OTE) have numerous advantages, such as low cost, large-area compatibility, flexibility, material abundance and an inherently low thermal conductivity. Therefore, organic thermoelectrics are considered by many to be a promising candidate material system to be used in lower cost and higher efficiency thermoelectric energy conversion, despite record ZT values for OTE currently lying around 0.25. A complete organic thermoelectric generator (TEG) normally needs both p-type and n-type materials to form its electric circuit. Molecular doping is an effective way to achieve p- and ntype materials using different dopants, and it is necessary to fundamentally understand the doping mechanism. We developed a simple yet quantitative analytical model and compare it with numerical kinetic Monte Carlo simulations to reveal the nature of the doping effect. The results show the formation of a deep tail in the Gaussian density of states (DOS) resulting from the Coulomb potentials of ionized dopants. It is this deep trap tail that negatively influences the charge carrier mobility with increasing doping concentration. The trends in mobilities and conductivities observed from experiments are in good agreement with the modeling results, for a large range of materials and doping concentrations. Having a high power factor PF is necessary for efficient TEG. We demonstrate that the doping method can heavily impact the thermoelectric properties of OTE. In comparison to conventional bulk doping, sequential doping can achieve higher conductivity by preserving the morphology, such that the power factor can improve over 100 times. To achieve TEG with high output power, not only a high PF is needed, but also having a significant active layer thickness is very important. We demonstrate a simple way to fabricate multi-layer devices by sequential doping without significantly sacrificing PF. In addition to the application discussed above, harvesting large amounts of heat at maximum efficiency, organic thermoelectrics may also find use in low-power applications like autonomous sensors where voltage is more important than power. A large output voltage requires a high Seebeck coefficient. We demonstrate that density of states (DOS) engineering is an effective tool to increase the Seebeck coefficient by tailoring the positions of the Fermi energy and the transport energy in n- and p-type doped blends of conjugated polymers and small molecules. In general, morphology heavily impacts the performance of organic electronic devices based on mixtures of two (or more) materials, and organic thermoelectrics are no exception. We experimentally find that the charge and energy transport is distinctly different in well-mixed and phase separated morphologies, which we interpreted in terms of a variable range hopping model. The experimentally observed trends in conductivity and Seebeck coefficient are reproduced by kinetic Monte Carlo simulations in which the morphology is accounted for.
Download or read book Doping in III V Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1993-09-30 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.
Download or read book Doping Engineering for Device Fabrication Volume 912 written by B. J. Pawlak and published by . This book was released on 2006-10-11 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
Download or read book Doping Engineering for Front End Processing written by B. J. Pawlak and published by Cambridge University Press. This book was released on 2014-06-05 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Download or read book Semiconductor Technology written by Mikhail Efimovich Levinshteĭn and published by Wiley-Interscience. This book was released on 1997-09-24 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Simpler and less expensive, too, are the reproducible processes using rare-earth elements in the synthesis of various III-V compounds. The parameters of monocrystals and epilayers grown with these elements are equal to those obtained by more complicated and expensive techniques, such as MBE and MOVPE. This invaluable manual explains the processes and advantages of generation-relaxation of nonequilibrium intrinsic defects in Si and introduces new ideas related to the role these defects may play in the formation of the generation-recombination centers in silicon. Also described in these chapters are many original techniques for external and intrinsic gettering in different semiconductors. Important experimental results dealing with isovalent doping of direct gap III-V compounds grown by different epitaxial methods are presented in detail by leading experts. These researchers also show how to achieve precise control of material properties for all principal methods of epitaxial growth. The final section describes nontraditional techniques for photochemical etching and the production of holographic diffraction grating by means of maskless chemical etching. This technique offers the highest resolution and can be applied to more than 20 semiconductor materials, including single crystal, polycrystalline, and amorphous materials. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual. New, more effective techniques for semiconductor processing and fabrication The product of decades of Russian research in semiconductor technology, this invaluable book offers Western researchers and engineers a wide range of new techniques, recipes, and characterization methods that provide simpler, cheaper, and more effective solutions to problems in semiconductor processing and fabrication. Many of these approaches appear here for the first time in Western technological literature. Included are: * Transmutation doping of semiconductors by charged particles * Polymer diffusants in semiconductor technology * Rare-earth elements in III-V compounds * Intrinsic point defect engineering in silicon high-voltage power device technology * Isovalent impurity doping of direct-gap III-V semiconductor layers * Surface passivation of III-V compounds by inorganic dielectrics and polymides * Precision profiling of semiconductor surfaces by means of photochemical etching
Download or read book Doping and Semiconductor Junction Formation written by Marshall Sittig and published by William Andrew. This book was released on 1970 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
