Download or read book Electromigration in Thin Films and Electronic Devices written by Choong-Un Kim and published by Elsevier. This book was released on 2011-08-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
Download or read book The Physical Properties of Thin Metal Films written by G.P. Zhigal'skii and published by CRC Press. This book was released on 2003-07-10 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of conducting materials, such as metals, alloys and semiconductors are currently in use in many areas of science and technology, particularly in modern integrated circuit microelectronics that require high quality thin films for the manufacture of connection layers, resistors and ohmic contacts. These conducting films are also important for fundamental investigations in physics, radio-physics and physical chemistry. Physical Properties of Thin Metal Films provides a clear presentation of the complex physical properties particular to thin conducting films and includes the necessary theory, confirming experiments and applications. The volume will be an invaluable reference for graduates, engineers and scientists working in the electronics industry and fields of pure and applied science.
Download or read book Fundamentals of Electromigration Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Download or read book Electronic Thin Film Reliability written by King-Ning Tu and published by Cambridge University Press. This book was released on 2010-11-25 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films are widely used in the electronic device industry. As the trend for miniaturization of electronic devices moves into the nanoscale domain, the reliability of thin films becomes an increasing concern. Building on the author's previous book, Electronic Thin Film Science by Tu, Mayer and Feldman, and based on a graduate course at UCLA given by the author, this new book focuses on reliability science and the processing of thin films. Early chapters address fundamental topics in thin film processes and reliability, including deposition, surface energy and atomic diffusion, before moving onto systematically explain irreversible processes in interconnect and packaging technologies. Describing electromigration, thermomigration and stress migration, with a closing chapter dedicated to failure analysis, the reader will come away with a complete theoretical and practical understanding of electronic thin film reliability. Kept mathematically simple, with real-world examples, this book is ideal for graduate students, researchers and practitioners.
Download or read book Physics of Thin Films written by Georg Hass and published by Elsevier. This book was released on 2013-10-22 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics of Thin Films: Advances in Research and Development, Volume 7 is a collection of papers about film growth and structure, optical properties, and semiconducting films. The book covers topics such as diffraction theory; film support and filter fabrication; aging, usage, and cleaning of filters; and properties and applications of III-V compound films. It also discusses topics such as the preparation of use and unbacked metal filters; electromigration in thin films; and the built-up molecular films and their applications. The text is recommended for physicists and engineers involved in thin film physics, especially those who would like to know more about the progresses in the field.
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Download or read book High Speed VLSI Interconnections written by Ashok K. Goel and published by John Wiley & Sons. This book was released on 2007-10-19 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
Download or read book Compound Semiconductor Power Transistors and written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 1998 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Download or read book Thin Films for Emerging Applications written by Maurice H. Francombe and published by Academic Press. This book was released on 2013-10-22 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.
Download or read book Reliability Physics and Engineering written by J. W. McPherson and published by Springer Science & Business Media. This book was released on 2013-06-03 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Reliability Physics and Engineering" provides critically important information for designing and building reliable cost-effective products. The textbook contains numerous example problems with solutions. Included at the end of each chapter are exercise problems and answers. "Reliability Physics and Engineering" is a useful resource for students, engineers, and materials scientists.
Download or read book Electromigration in Metals written by Paul S. Ho and published by Cambridge University Press. This book was released on 2022-05-12 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Download or read book Elements of Electromigration written by King-Ning Tu and published by CRC Press. This book was released on 2024-01-19 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures. In the era of big data and artificial intelligence, next-generation microelectronic devices for consumers must be smaller, consume less power, cost less, and, most importantly, have higher functionality and reliability than ever before. However, with miniaturization, the average current density increases, and so does the probability of electromigration failure. This book covers all critical elements of electromigration, including basic theory, various failure modes induced by electromigration, methods to prevent failure, and equations for predicting mean-time-to-failure. Furthermore, effects such as stress, Joule heating, current crowding, and oxidation on electromigration are covered, and the new and modified mean-time-to-failure equations based on low entropy production are given. Readers will be able to apply this information to the design and application of microelectronic devices to minimize the risk of electromigration-induced failure in microelectronic devices. This book essential for anyone who wants to understand these critical elements and minimize their effects. It is particularly valuable for both graduate students of electrical engineering and materials science engineering and engineers working in the semiconductor and electronic packaging technology industries.
Download or read book Microstructure and Electromigration Effects in A1 and A1 Alloy Thin Films written by John Espinoza Sanchez (Jr) and published by . This book was released on 1991 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Solid State Diffusion Volume 2 written by Aloke Paul and published by Elsevier. This book was released on 2017-04-13 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the second of this two volume set. Volume 2 covers practical issues on diffusion phenomena in bulk, thin film, and in nanomaterials. Diffusion related problems and analysis of methods in industrial applications, such as electronic industry, high temperature materials, nuclear materials, and superconductor materials are discussed. - Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis - Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion - Covers bulk, thin film, and nanomaterials - Introduces the problems and analysis in important materials systems in various applications - Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe
Download or read book Diffusion in Materials DIMAT2000 written by Yves Limoge and published by Trans Tech Publications Ltd. This book was released on 2001-04-19 with total page 1808 pages. Available in PDF, EPUB and Kindle. Book excerpt: DIMAT2000 Int. Conf. on Diffusion in Materials, Paris, France, July 17-21, 2000
