Download or read book Electrical Properties and Degradation Kinetics of Compensated Hydrogenated Microcrystalline Silicon Deposited by Very High frequency glow Discharge written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1874 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applied Science Technology Index written by and published by . This book was released on 1996 with total page 1618 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1988 with total page 960 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diagnostics of a Glow Discharge Used to Produce Hydrogenated Amorphous silicon Films Quarterly Progress Report October 15 1981 January 14 1982 written by and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of film deposition monitors to rapidly and accurately measure a-Si:H deposition at various surfaces of the discharge is reported. Deposition rates have been measured in-situ within a few minutes, and many different discharge conditions can be probed in a short time. The frequency shift of quartz crystals was used for monitoring thickness. The method used and results obtained are reported. The ratio of deposited silicon atoms to depleted SiH4 molecules is plotted vs. the discharge power to flow ratio. (LEW).
Download or read book Solar Energy written by Christoph Richter and published by Springer. This book was released on 2012-11-29 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering some 30 entries from the Encyclopedia of Sustainability Science and Technology, this book presents fundamental principles and technologies for sustainably harnessing solar energy. Covers photovoltaics, solar thermal energy, solar radiation and more.
Download or read book Hydrogenated Microcrystalline Silicon Germanium Material and Photovoltaic Devices Prepared Using ECR PECVD written by Jianhua Zhu and published by . This book was released on 2003 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: High quality [mu]c-SiGe:H is a very promising alternative for high efficiency photovoltaic device. The preparation of this material requires very high hydrogen dilution ratio in PECVD system. The deposition rate was greatly limited by this high hydrogen ratio. In this work, ECR PECVD technique is used to deposit [mu]c-SiGe:H material. The growth rate can be greatly enhanced by taking advantage of the high plasma density and low ion energy features of ECR and extremely high hydrogen dilution ratios are no longer necessary for [mu]c-SiGe:H growth. Films with good crystallinity were prepared at hydrogen dilution ratio as low as 1:15. An intensive study has been completed for the [mu]c-SiGe:H with 0 to over 75% Ge incorporated. The optical bandgap shrinks with the incorporation of Ge into the material. Raman spectra and the increase of activation energy and photosensitivity indicates the deterioration of crystallinity by adding Ge to the Si structure. Solar cell devices using [mu]c-SiGe:H as the active layer were deposited on stainless steel substrates. Fill factors over 55% were achieved for [mu]c-SiGe devices with less than 35% Ge. An [mu]c-Si buffer layer between n+ and[mu]c-SiGe:H n layer was used in the device design and this buffer layer revealed to be very beneficial to the device performance and the growth rate of [mu]c-SiGe:H active layer. C-V measurements showed that the accidental oxygen leakage can raise the doping level to the order of 1E17cm−3. ppm level TMB can be mixed in the source gas to very effectively reduce the N-type doping brought by oxygen. Short circuit current was increased by the TMB counter doping. The minority carrier diffusion length was estimated from reversed bias QE and C-V measurements. In the [mu]c-SiGe:H devices fabricated by ECR PECVD, the hole diffusion length is several tenth micrometers. The accidental doping in the [mu]c-SiGe:H deteriorates the device performance by decreasing the minority carrier diffusion length. Compensating doping of TMB can increase minority carrier diffusion length L[subscript p] and improve short circuit current, and hence improve the conversion efficiency of solar cell device.
Download or read book Deposition of Device Quality Low Hydrogen Content Hydrogenated Amorphous Silicon at High Deposition Rates written by and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diagnostics of a Glow Discharge Used to Produce Hydrogenated Amorphous Silicon Films Quarterly Progress Report October 15 1982 January 14 1983 written by and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diagnostics of a Glow Discharge Used to Produce Hydrogenated Amorphous Silicon Films Quarterly Progress Report July 15 1982 October 14 1982 written by and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optimization of the Reactive Magnetron Sputter Deposition and Studies of Hydrogen Diffusion in Hydrogenated Amorphous Silicon Based Materials written by Yuehai Harry Liang and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The applications of hydrogenated amorphous silicon in photovoltaic devices have been hindered due to two key problems: the light-induced metastable defect creation and poor doping. To improve these properties, I have chosen the reactive magnetron sputtering method for the growth of a-Si:H and its doped alloys. The advantages of this technique are the independent control of hydrogen incorporation via the pressure of H$\sb2$ injected into the plasma, and the energetic nature of the deposition species. The effects of growth parameters on the electrical and microstructural properties have been studied, and the films appear to be optimized. Earlier studies indicated that the mid-gap defect density of high quality a-Si:H increases from 10$\sp{15}$ cm$\sp{-3}$, and saturates at 9 x 10$\rm\sp{16}\ cm\sp{-3}$ after intense light exposure. Using reactive magnetron sputtering, I have achieved a very stable high quality a-Si:H: the saturated defect density reaches the lowest value (2$-$3 x 10$\rm\sp{16} cm\sp{-3}$) reported so far in the literature. This significant improvement of the stability could result in a high stabilized solar cell efficiency. For p$\sp+$ a-Si,C:H, films with much lower thermal activation energy (0.28-0.33 eV) have been obtained, compared with films grown by plasma enhanced chemical vapor deposition (0.4 eV). Microstructural investigation shows that the microvoid contents in these films are much less than that of high quality boron doped a-Si,C:H prepared by plasma enhanced chemical vapor deposition. I attribute the significant improvements of stability and doping efficiency of the sputtered amorphous silicon and its alloys to the better amorphous network. Hydrogen diffusion in a-Si:H has been associated with the metastable defect creation and annealing. A systematic study of hydrogen diffusion kinetics in sputtered a-Si:H is carried out for the first time. The independent control of hydrogen incorporation allows me to study explicitly the effect of hydrogen content on hydrogen diffusion kinetics. I have found that H diffusion coefficient varies strongly with the hydrogen concentration in a-Si:H film. The H diffusion coefficient is thermally activated, with the activation energy decreases from 1.6 to 1.0 eV as the hydrogen concentration increases from 1.2-12 at.%. For film with higher hydrogen content ($\sim$18 at.%), the H diffusion profile shows an exponential decay. This observation indicates that the diffusion process is deep trapping limited. Based on the experimental results, I have proposed a revised H density of states model to account for the strongly concentration dependent diffusion behavior. As the H chemical potential shifts closer to the transport level with the increase of hydrogen content, the diffusion activation energy decreases and the diffusion coefficient increases.
Download or read book Deposition of Device Quality Low Hydrogen Content Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Microcrystalline Silicon Applied in Very Thin Tandem Solar Cells written by Sandra Schicho and published by Forschungszentrum Jülich. This book was released on 2011 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photovoltaic and Photoactive Materials written by Joseph M. Marshall and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this NATO Advanced Study Institute (ASI) was to present an up-to-date overview of various current areas of interest in the field of photovoltaic and related photoactive materials. This is a wide-ranging subject area, of significant commercial and environmental interest, and involves major contributions from the disciplines of physics, chemistry, materials, electrical and instrumentation engineering, commercial realisation etc. Therefore, we sought to adopt an inter disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development. The lecture programme commenced with overviews of the present relevance and historical development of the subject area, plus an introduction to various underlying physical principles of importance to the materials and devices to be addressed in later lectures. Building upon this, the ASI then progressed to more detailed aspects of the subject area. We were also fortunately able to obtain a contribution from Thierry Langlois d'Estaintot of the European Commission Directorate, describing present and future EC support for activities in this field. In addition, poster sessions were held throughout the meeting, to allow participants to present and discuss their current activities. These were supported by what proved to be very effective feedback sessions (special thanks to Martin Stutzmann), prior to which groups of participants enthusiastically met (often in the bar) to identify and agree topics of common interest.
Download or read book Technology and Applications of Amorphous Silicon written by Robert A. Street and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.
Download or read book Thin Film Silicon Solar Cells written by Arvind Victor Shah and published by CRC Press. This book was released on 2010-08-19 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin
