Download or read book Electrical Isolation of GaN by Ion Implantation Damage written by C. Uzan-Saguy and published by . This book was released on 1999 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Electrical Characterization of Ion beam Induced Damage in GaN written by Phuti Ngako Mahloka Ngoepe and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ions with different energies have been used to modify the properties of semiconductors. In particular, these modifications have included altering the electrical properties of semiconductors. The ion-solid interactions during ion irradiation can induce electrically active defects in these materials. These defects can be beneficial or detrimental to the device, depending on the use of the device. In this study, deep level transient spectroscopy (DLTS) was used to study electrically active defects in gallium nitride (GaN) after various ion-processing methods. These ion bombardment processes included ion implantation and irradiation. Low, medium, and high energy ions were used during these procedures. (In this study, ion implantation implies medium energy ion bombardment while ion irradiation implies high energy ion bombardment.) Electron beam exposure (EBE) is a method that was used for exposing GaN to low ion energy conditions. In this method, GaN was exposed to metal evaporation conditions without evaporating the metal. In the second case GaN was exposed to 360 keV Cs ion implantation. Lastly, Xe ions with energy 167 MeV were irradiated onto GaN. Different species of defects were observed in each case. Only one defect was observed in the EBE study and had an activation energy of 0.12 eV. This defect is similar to defects obtained in other studies, which used different irradiation methods, such as electron, proton and gamma irradiation. The Cs ion implantation yielded a defect with activation energy of 0.19 eV. A comparison was made to defects obtained using other processing techniques, which included electron beam deposition and various ion implantations. Lastly, Xe irradiation yielded two defects with activation energies of 0.07 and 0.48 eV. Both these defects were also compared with those obtained in other studies. The former was similar to a defect predicted by modelling while the latter was similar to a defect obtained by In doping. It was found that all the processing techniques used in this study induced electrically active defects as measured by DLTS. It was found that the defects measured in this study had similar characteristics to those found in other studies, whereby different processing methods were used. It is therefore deduced that the defects are not related to the ion, but rather are intrinsic defects or defects related to impurities in the GaN. This shows that different energies of ions lead to different defects forming in GaN. This understanding will contribute to improved quality and reliability of devices fabricated on GaN in applications ranging from radiation detection to communications.
Download or read book Electrical Activation Studies of Ion Implanted Gallium Nitride written by James A. Fellows and published by . This book was released on 2001-11-01 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and systematic electrical activation study of Si- implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 oC, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were obtained on all Si-implanted samples. PL spectra revealed nearly complete implantation damage recovery as well as the nature of the yellow luminescence plaguing nearly all Si-doped GaN. Additionally, GaN wafers were implanted with Mg and various coimplants and annealed from 1100 to 1350 oC. All of the Mg-implanted and most of the Mg-coimplanted GaN samples became extremely resistive, and did not show definite p-type conductivity even after annealing at 1350 oC, remaining highly resistive even at a sample temperature as high as 800 K. A dominant 2.36 eV green luminescence band observed in the PL spectra of all Mg-implanted samples is attributed to a Mg-related deep complex DAP transition. The inefficient electrical activation of Mg acceptors implanted into GaN is attributed to these Mg-related deep complexes.
Download or read book Handbook of Nitride Semiconductors and Devices Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Download or read book Ion Implantation Damage Annealing and Dopant Activation in Epitaxial GaN written by Agajan Suvkhanov and published by . This book was released on 2001 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the First Symposium on III V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1996 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Ion Implantation written by Mark Goorsky and published by BoD – Books on Demand. This book was released on 2012-05-30 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
Download or read book III Nitride Based Semiconductor Electronics and Optical Devices and Thirty Fourth State of the Art Program on Compound Semiconductors SOTAPOCS XXXIV written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped III Nitrides for Optoelectronic and Spintronic Applications written by Kevin Peter O'Donnell and published by Springer Science & Business Media. This book was released on 2010-06-28 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Download or read book Ion Beams in Materials Processing and Analysis written by Bernd Schmidt and published by Springer Science & Business Media. This book was released on 2012-12-13 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
