Download or read book Electrical characterization of fully depleted SOI devices based on C V measurements written by Blend Mohamad and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les technologies de films minces sur isolant apparaissent comme des solutions fiables pour la nano électronique. Elles permettent de dépasser les limites des technologies sur substrat silicium massif, en autorisant de faibles tensions d'utilisation et un gain en énergie significatif. En effet, les transistors à semi-conducteurs à grille métallique (MOSFET) avec un substrat totalement déplété (FDSOI) conduisent à des courants de fuites faible et améliorent la variabilité ce qui permet de diminuer les tensions d'alimentation en particulier pour les applications SRAM. A partir du nœud 14 nm, les transistors peuvent intégrer un canal SiGe, le diélectrique high-k et la grille métallique. Tous ces nouveaux modules de procédés technologiques rendent l'analyse électrique des transistors MOS ainsi que sa corrélation avec la technologie plus compliquées. Ce travail de thèse propose plusieurs nouvelles méthodologies d'extraction automatique et statistique de paramètres pour les empilements MOS FDSOI avancées. Ces méthodologies sont toutes basées sur des mesures de capacité par rapport à la tension (C-V) rendant compte du couplage capacitif entre grille métallique, canal et substrat face arrière. Avec de telles caractéristiques C-V, des méthodologies fiables sont proposées pour l'épaisseur d'oxyde de grille équivalente (EOT), le travail effectif de la grille métallique FDSOI (WFeff), ainsi que d'autres paramètres comme les épaisseurs du canal (tch) et de l'oxyde enterré (tbox) ainsi que l'affinité électronique efficace (Xeff) du substrat face arrière qui inclut les différents effets électrostatique à l'œuvre dans l'oxyde enterré et à ses interfaces. Ces différentes méthodologies ont été validées par des simulations quantiques. La force de l'analyse expérimentale a été de contrôler la cohérence des extractions obtenues sur tout un ensemble de transistors MOS obtenus à partir de variation sur les différentes briques de base et de contrôler la cohérence des paramètres extraits.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Essderc 98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon on insulator Technology and Devices 13 written by George K. Celler and published by The Electrochemical Society. This book was released on 2007 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 1995-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Selected Semiconductor Research written by Ming Fu Li and published by World Scientific. This book was released on 2011-02-28 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Silicon on insulator SOI MOSFETs written by Ji'an Chen and published by . This book was released on 1992 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Materials 8 written by Samares Kar and published by The Electrochemical Society. This book was released on 2010-10 with total page 621 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions will cover comprehensively all the aspects of high-k material physics and technology: Diverse High Mobility Substrates, High-k Materials, Metal Gate Electrode Materials, Deposition Techniques, Bulk Material Properties, Flat-Band Voltage Issues and Control, Interfaces, Gate Stack Reliability, Electrical, Chemical, and Physical Chatracterization, Novel Applications, High-k and Diverse Insulators for Photonics, High-k Processing/ Manufacturing.
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Download or read book Proceedings of 6th International Conference on Recent Trends in Computing written by Rajendra Prasad Mahapatra and published by Springer Nature. This book was released on 2021-04-20 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a collection of high-quality peer-reviewed research papers presented at Sixth International Conference on Recent Trends in Computing (ICRTC 2020) held at SRM Institute of Science and Technology, Ghaziabad, Delhi, India, during 3 – 4 July 2020. The book discusses a wide variety of industrial, engineering and scientific applications of the emerging techniques. The book presents original works from researchers from academic and industry in the field of networking, security, big data and the Internet of things.
Download or read book Discrimination of Surface and Volume States in Fully Depleted Field effect Devices on Thick Insulator Substrates written by Robert G. Manley and published by . This book was released on 2011 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The behavior of electronic devices fabricated on thin, lightly doped semiconductor layers can be significantly influenced by very low levels of non-ideal charge states. Such devices typically operate in a fully depleted mode, and can exhibit significantly different electrical properties and characteristics than their bulk material counterparts. Traditional interpretation of device characteristics may identify the existence of such non-idealities, but fail to ascertain if the origin is from within the semiconductor layer or associated with the interfaces to adjacent dielectric materials. This leads to ambiguity in how to rectify the behavior and improve device performance. Characterizing non-idealities through electrical means requires adaptations in both measurement techniques and data interpretation. Some of these adaptations have been applied in material systems like silicon-on-insulator (SOI), however in systems where the semiconductor film becomes increasingly isolated on very thick insulators (i.e., glass), the device physics of operation presents new challenges. Overcoming the obstacles in interpretation can directly aid the technology development of thin semiconductor films on thick insulator substrates. The investigation is initiated by isolating the interface of crystalline silicon bonded to a thick boro-aluminosilicate glass insulator. The interface is studied through traditional bulk-capacitance-voltage (C-V) methods, and the electrical fragility of the interface is exposed. This reveals the necessity to discriminate between interface states and bulk defect states. To study methods of discrimination, the physics of field-effect devices fabricated on insulated semiconducting films is explained. These devices operate in a fully depleted state; expressions that describe the C-V relationship with a single gate electrode are derived and explored. The discussion presents an explanation of how surface and volume charge states each contribute to the C-V characteristic behavior. Application of this adapted C-V theory is then applied to the gated-diode, a novel device which has proven to be instrumental in charge state discrimination. Through this adaptation, the gated-diode is used to extract recombination-generation parameters isolated to the top surface, bottom surface and within the volume of the film. The methodology is developed through an exploration of devices fabricated on SOI and silicon-on-glass (SiOG) substrates, and furthers the understanding needed to improve material quality and device performance."--Abstract.
Download or read book Carrier mobility in advanced channel materials using alternative gate dielectrics written by Eylem Durgun Özben and published by Forschungszentrum Jülich. This book was released on 2014-03-20 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor On Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Download or read book Advances in Microelectronics Reviews Vol 1 written by Sergey Yurish and published by Lulu.com. This book was released on 2017-12-24 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Download or read book Solid State Topics General 218th ECS Meeting written by K. B. Sundaram and published by The Electrochemical Society. This book was released on 2011-03 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid State Topics General Session¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
