Download or read book Electrical and Optoelectronic Properties of Gallium Nitride written by Lorraine Barbara Flannery and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optoelectronic Properties of Gallium Nitride written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Download or read book Gallium Nitride based Electronic and Optoelectronic Devices written by Li Wang and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding electric and optical properties. GaN-based device technologies have improved substantially, and are still investigated intensely for advanced performance. The GaN-based devices studied in this dissertation involve Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs) on the electronic side and light emitting diodes (LEDs) on the optoelectronic side.In the SBDs part, GaN SBDs with high voltage blocking capability and low on-state voltage on inductively coupled plasma (ICP) etched commercial LED epi-wafers are studied. Their applications in alternating current (AC) LEDs are demonstrated. It is revealed that the potassium hydroxide (KOH) pretreatment with optimized concentration could eliminate the leakage current due to the reduction of the ICP induced surface defects. Moreover, the numerical values of the surface defect density are extracted by analyzing the leakage current mechanism. In the HEMTs part, the transfer saturation feature of GaN-based HEMTs is investigated firstly. It is observed that the drain current in HEMTs with short gate length becomes saturation as gate bias approaches zero. The theoretical analysis based on a simple series resistance model reveals this saturation feature results from the fact that the total source-drain resistance is independent on gate bias in a short gate length HMET. This conclusion is further verified by device simulation study. Secondly, novel GaN double-gate (DG) HEMTs featuring enhanced back gate-control of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is designed and modeled. The results indicate that the DG GaN-HEMTs can provide a higher maixmum transconductance gain and better immunity of the short channel effects than traditional single-gate HEMTs. At last, the temperature-dependent electrical characteristics of GaN-based HEMTs from room temperature down to 50K are studied. It is observed that the drain saturation current and transconductance increase with the decrease of the temperature. In the LEDs part, quantum dots (QDs) coupled non-resonant microcavity light emitting diodes (LEDs) with micro-holes is designed and demonstrated to enhance non-radiative energy transfer between InGaN/GaN quantum wells (QWs) and QDs for the first time by tailoring the radiative relaxation lifetime of excitations in QWs. The blue emission from the InGaN/GaN QWs is detuned from the resonant modes of the microcavity to extend the radiative recombination lifetime in QWs. The direct contact of QDs and the QWs active layer is achieved by depositing QDs into the micro-holes on the LEDs. This non-resonant microcavity structure leads to a 3.2 times enhancement of the effective quantum efficiency of QDs in microcavity LEDs than the LEDs without microcavity structure.

Download or read book Electrical and Optical Studies on Modeling and Fabrication of Gallium Nitride GaN Based Optoelectronic Devices written by Asim Mohammed A. Noor Elahi and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The work in this dissertation is divided into two parts. The first part is related to the study of integration optoelectronic devices, such as Schottky Barrier Diodes (SBDs) and Metal Semiconductor Field Effect Transistors (MESFETs), along with Light Emitting Diodes (LEDs) on the same electronic chip. The second part of this dissertation is concerned with the electrical and optical modeling of gap-free microdisplay devices of based on gallium nitride, GaN, the optical modeling of nanophosphor-coupled porous layers for color conversion in III-Nitride microLED arrays, and also with some experimental studies on the photochemical and thermal stabilities of QDs materials that are integrated in the structure of GaN microLED devices. It is concluded from the first part of this work that the buffer layer located at the interface of unintentionally doped GaN layer and sapphire substrate has a strong effect on the forward current properties of lateral-type GaN Schottky diodes and plannar GaN metal-semiconductor-field-effect-transistors (MESFETs) grown on sapphire substrates (chapter 2). Experimental and simulation results have revealed that the interfacial region is acting as a channel in which the current passes in between the device metallic contacts because of the high conductivity that arises from a significant number of threading dislocations that are decorated by impurities due to the large lattice mismatches between GaN and sapphire. Owing to the presence of the interfacial regions, the lateral Schottky diodes exhibit high current densities but without change in their on-state-voltage, whereas the planar MESFETs could hardly reach cut-off or show saturation behavior. As a result, GaN-based vertical metal-semiconductor field-effect transistors(MESFETs) on commercial light-emitting-diode (LED) epi-wafers was fabricated and designed to overcome the latter problem (chapter 3). Also, the devices studied were simulated using charge transport model for better understanding of the current-voltage relationship. It was found that shrinking the size of the drain pillar helps reaching cut-off at much lower gate bias, even at high carrier concentration of unintentionally doped GaN and also with considerable leakage current caused by the Schottky barrier lowering. From the second part of the dissertation, it is disclosed that the isolation barrier region offers a better performance of a microLED microdisplay by minimizing the light cross-talk between the microLED pixels (chapter 4). It was found from the optical modeling results that the light cross-talk between the microLED pixels including the illuminating one in the isolation barrier planar structure is decreased significantly compared to the light cross-talk from all the pixels including the illuminating one in the non-planar air gap conventional structure of a microdisplay. The electrical simulation results reveal that the cross-talk current depends on the implanted ions energy, implanted ions dose and the width of the isolation barrier. The cross-talk current between the devices is decreased and the number of the affected pixels in the same row of a microdisplay is also reduced by the increase of the impurity concentration in the isolation barriers since the implanted ions are introducing deep level traps which results in current isolation between devices. Since the current microLED arrays are monochromatic emitting devices, nanophosphor-coupled nanoporous layers in III-nitride microLED arrays has been used to create colorful microLED arrays. The structure of those devices has been numerically analyzed along with its impacts on the application of microLED matrices in colorful display panels (chapter 5). It is concluded from the computational analysis carried out in this project that there remain some key challenges that need to be addressed in order to use such a structure in developing full-color miroLED display panels that simultaneously preserve the high-resolution and efficiency performances of microLED display devices. The extraction efficiency of both excitation (blue) and down-conversion (red) light from a nanophosphor-coupled LED devices have been demonstrated to drop drastically beyond specific thresholds when the porosity and thickness of the porous down-conversion layer increases. Additionally, it is found from the simulation that the cross-talk of down-converted light between adjacent micro-LED pixels is substantially higher compared to the excitation light cross-talk due to the location of the phosphors in the pore cavities and the resultant strong scattering by the surrounding nanopores. Furthermore, the instability of QDs is still a serious concern for the implementation of those emissive materials in the microLED display panels. Therefore, in Chapter 6, experimental studies on the thermal and photochemical stabilities of multicolored microLED display panels are presented. This chapter studied the thermal and photochemical stabilities of a 15 micrometer-thick layer of mixed red, green, and blue quantum dots produced via spin-cast deposition over a blue microLED matrix. This study also looked at the optical properties of QDs-based multicolored microLEDs. The results in this work provided us with a basic understanding of the ultimate limit of QD performance in microLED devices. The stability assessment results support and inspire the use of red, green, and blue QDs layers in blue microLED matrices to produce full-color microLED devices. Such research will aid in the design and production of high-efficiency, high-performance micro-LED display panels. Finally, Chapter 7 presents suggestions for the proposed future research in the field related to the scope of investigation reported in this thesis.

Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Download or read book Gan based Materials And Devices Growth Fabrication Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Download or read book Electrical Optical and Defect Properties of Carbon doped Gallium Nitride Grown by Molecular beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-30 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Download or read book Optoelectronic Properties of Aluminum Gallium Nitride written by Erik Laker Waldron and published by . This book was released on 2003 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Related Wide Bandgap Materials and Devices written by R. Szweda and published by Elsevier. This book was released on 2000-07-07 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Download or read book III V Nitrides Semiconductors and Ceramics written by B. K. Meyer and published by Elsevier Science Limited. This book was released on 1998-07 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays. The 4 day symposium was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997, provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as LEDs and laser diodes.

Download or read book Properties Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.

Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.

Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.