Download or read book Effects of Hydrogen on Defects in Neutron Irradiated Silicon written by YC. Du and published by . This book was released on 1984 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P-type Si (H) irradiated by neutron have been studied by DLTS, IR absorption, resistivity and minority carrier lifetime measurements. In as-grown and neutron irradiated Si (H), some Si -H IR bands and hydrogen-related deep centers have been observed. Because of hydrogen in silicon, the production rates of radiation defects decreased, and the passivation action of hydrogen emerged unambiguously at 200°c annealing temperature or higher. These cause the differences of annealing behavior of the resistivity and lifetime between Si(H) and Si(Ar).

Download or read book The properties of defect clusters in neutron irradiated silicon thesis written by James Alan Sprague and published by . This book was released on 1969 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Hydrogen and Neutron Irradiation on the Failure of Flawed Zircloy 2 Pressure Tubes written by Atomic Energy of Canada Limited and published by . This book was released on 1969 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoexcitation and Decay Processes of Electronic Infrared active Defects in Neutron Irradiated Silicon written by Walter Vidinski (Jr) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Annealing of Neutron Irradiated Silicon with Implications in Device Technology written by Sushil Kumar Kapoor and published by . This book was released on 1972 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1983 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ASTM Special Technical Publication written by and published by . This book was released on 1911 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Neutron Transmutation Doping of Semiconductor Materials written by R. D. Larrabee and published by Springer. This book was released on 1984 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Download or read book Sandia Corporation Reprints Monographs and Research Colloquia written by Sandia Corporation. Technical Information Division and published by . This book was released on 1963 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactor Materials written by and published by . This book was released on 1961 with total page 1094 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book Metals Abstracts written by and published by . This book was released on 1981 with total page 1412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1968 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt: