Download or read book Effect of Ramp Rate and Annealing Temperature on Boron Transient Diffusion in Implanted Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present results of recent kinetic Monte Carlo simulations of the effect of annealing time and ramp rate on boron transient enhanced diffusion (BTED) in low energy ion implanted silicon. The simulations use a database of defect and dopant energetics derived from first principle calculations. We discuss the complete atomistic details of defect and dopant clustering during the anneals, and the dependence of boron TED on ramp rate. The simulations provide a complete time history of the evolution of the active boron fraction during the anneal for a wide variety of conditions. We also studied the lateral spreading of the boron during the annealing for two different conditions, furnace anneal and ramp anneal.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Diffusion in Silicon written by D. J. Fisher and published by . This book was released on 2005 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decade's work on the same topic.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2003 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Annealing and Diffusion Characteristics of Boron Through oxide Implanted Silicon written by Der-Tsyr Fan and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Rapid Thermal Processing written by Richard B. Fair and published by Academic Press. This book was released on 2012-12-02 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 3276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Download or read book A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron Into Silicon written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1977 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: A multi-stream diffusion model is proposed for te calculation of the annealing behavior of boron that is ion implanted into silicon at room temperature and subsequently annealed. This model is capable of predicting both the redistribution and the electrical activation of boron during the anneal, as a realistic model should. The calculated results compare very samples that are implanted at room temperature with boron in the dose range from 10 to the 14 power to 10 to the 16th power ions/sq cm and subsequently annealed in the temperature range from 800 C to 1000 C. This range of dose and annealing conditions includes both the typical applications of ion implantation as it is applied in the fabrication of devices nad the unconventional cases of high dose implants and low temperature annealing. (Author).
Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II Volume 610 written by Aditya Agarwal and published by . This book was released on 2001-04-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Download or read book Physics and modeling of boron diffusion activation and evolution of extended defects and point defects during rapid thermal annealing of ion implanted silicon written by Hiroyuki Kinoshita and published by . This book was released on 1993 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2018 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Scale Modeling of Boron Transient Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principle approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement in all cases. The parameters and reactions used have been implemented into a continuum-level model simulator.
Download or read book Ion Beams in Materials Processing and Analysis written by Bernd Schmidt and published by Springer Science & Business Media. This book was released on 2012-12-13 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Download or read book The Creation of Boron Deep Levels by High Temperature Annealing of 4H SiC written by Hrishikesh Das and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Creation of semi-insulating layers in SiC is highly desirable for high voltage device fabrication. Specifically PiN diodes can be fabricated with a compensated semi-insulating layer that would be capable of blocking a large reverse voltage. Semi-insulating (SI) behavior in SiC has been traditionally achieved via passivation of shallow dopants with vanadium-related deep levels. Degraded electrical properties of SiC devices result from the use of vanadium compensated SiC because unintentional formation of additional defects due to vanadium segregation and stress generation in the material occur. In this work, the possibility of low doped or SI epilayers via engineering of the boron related defects in SiC is investigated. High temperature treatment (up to 2000 degree C) of boron doped samples is used to stimulate boron diffusion and formation of deep boron centers in concentration sufficient for compensation of shallow dopants, without simultaneous formation of undesirable shallow boron levels. High temperature annealing of both epitaxial layers in-situ doped with boron and boron implanted 4H-SiC is investigated. The possibility of diffusion from highly boron doped substrate is also investigated. The diffusion profiles are modeled and the diffusion coefficients extracted to give information about diffusion mechanisms. The boron D-center was observed using photoluminescence (PL) after high temperature annealing of the implanted samples. Clear temperature dependence of the creation of the D-center was observed. Compensated material was revealed after an Inductively Coupled Plasma (ICP) etch on an epi-over grown sample.
Download or read book Dopant dopant and Dopant defect Processes Underlying Activation Kinetics written by Ali Mokhberi and published by . This book was released on 2003 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
