Download or read book Disorder Effects in Aluminum Gallium Arsenide Quantum well Heterostructures written by Wyn Davis Laidig and published by . This book was released on 1981 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Phonon and Alloy clustering Effects in Aluminum Gallium Arsenide gallium Arsenide Quantum well Heterostructures written by Bruce Arthur Vojak and published by . This book was released on 1981 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Donor induced Layer Disordering Via Silicon Diffusion in Aluminum Gallium Arsenide gallium Arsenide Quantum well Heterostructures and Disorder defined Index guided Stripe Geometry Laser Diodes written by Paul Gavrilovic and published by . This book was released on 1985 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Download or read book Native Defect Enhanced Inter diffusion in Aluminum Gallium Arsenide Quantum Well Heterostructures written by Suresh Seshadri and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Uniaxial Stress Effects on the Electronic Properties of Gallium Arsenide aluminum Gallium Arsenide Single double Barrier Heterostructures written by Shey-shi Lu and published by . This book was released on 1991 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep level Transient Spectroscopy Studies of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures and Superlattices written by Paul Alan Martin and published by . This book was released on 1986 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of two projects. First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAS-AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS. Deep-level transient spectroscopy is reviewed, as are theoretical and experimental attempts to predict and measure band offsets. A theory of electron capture into and emission out of quantum wells in response to pulsed bias is developed. DLTS studies of GaAs AlGaAs quantum-well structures are presented and compared with the results of previous studies of defects in MOCVD GaAs and AlGaAs. Emission of electrons out of the GaAs quantum well is observed, but at emission rates in excess of those predicted by thermionic emission or by phonon assisted tunneling. In the absence of a model for the emission process, meaningful data for band-edge discontinuities cannot be extracted from the measured emission rates. Further characterization of the emission process would be of great value in the development of devices based on heterojunction technology. Data are also presented from a DLTS study of defect states in GaAs - AlGaAs superlattices Doubling the layer thickness from 50 to 100 A resulted in a dramatic change in the defects observed. This is accounted for by the presence of a conducting miniband in one super-lattice and its absence in the other.
Download or read book Layer Disordering and Aluminum gallium Interchange in Aluminum Gallium Arsenide gallium Arsenide Quantum Well Heterostructures written by Louis Joseph Guido and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the experiments described here, Al$sb{rm x}$Ga$sb{rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that Al-Ga interchange is strongly influenced by the interdependence of the crystal surface-ambient interaction and the Fermi-level effect. We have investigated the crystal surface-ambient interaction by varying both the surface encapsulation condition (e.g., SiO$sb2$-cap, Si$sb3$N$sb4$-cap) and the anneal ambient (As-rich, Ga-rich). The Fermi-level effect has been examined for QWH crystals doped with either donor or acceptor impurities during crystal growth and annealed, and for crystals converted to n-type conductivity by high-temperature Si diffusion or by Si$sp+$ ion implantation and annealing. The data show that Al-Ga interchange is enhanced for n-type samples annealed under As-rich conditions, and for p-type samples annealed under Ga-rich conditions. These trends suggest that acceptor native defects (V$sb{rm III}$) and donor native defects (I$sb{rm III}$, V$sb{rm As}$) are responsible for Al-Ga interdiffusion in n-type and p-type samples, respectively. By varying the anneal As$sb4$ over-pressure we have demonstrated that the degree of Al-Ga interchange does not increase monotonically for n-type samples as expected for a simple Column III vacancy controlled process. In addition, we show that the activation energy for Al-Ga interdiffusion (E$sb{rm Al-Ga}$) is reduced by $sbsim$2 eV for n-type samples as compared to nominally undoped samples. These results indicate that E$sb{rm Al-Ga}$ can be used to label the various Al-Ga interdiffusion regimes and, thereby, provide for more accurate identification of the native defect species involved in the interchange process. Furthermore, by employing three single-well QWH crystals that differ only in the location of the QW relative to the crystal surface, we demonstrate that the Al-Ga interchange mechanism is depth-dependent because of the re-equilibration of native defect concentrations at the crystal free surface. Finally, we report on Si$sp+$ ion implantation experiments that demonstrate enhanced Si$sp+$-IILD for very low implant doses, hence minimizing the effects of implant damage.
Download or read book Native oxide Masked Impurity induced Layer Disordering of Aluminum Gallium Arsenide Quantum Well Heterostructures and Superlattices written by Nada El-Zein and published by . This book was released on 1992 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect accelerated Donor Diffusion and Layer Intermixing in Aluminum Gallium Arsenide gallium Arsenide Quantum Well Heterostructures written by Fredrick Anthony Kish (Jr.) and published by . This book was released on 1989 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Native Oxidation of Selectively Disordered Aluminum Gallium Arsenide Quantum Well Heterostructures Deep Oxide Structures for High Performance Lasers and Waveguides written by Michael Ragan Krames and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented showing that "deep," device-quality native oxide structures can be formed in selected areas in $rm Alsb{x}Gasb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$spcirc$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations. Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.
Download or read book Thermal Characteristics of Aluminum Gallium Arsenide gallium Arsenide Quantum Well Heterostructure P n Junction Lasers Grown on Silicon written by Douglas Carleton Hall and published by . This book was released on 1988 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Room Temperature Continuous Operation of Aluminum Gallium Arsenide gallium Arsenide Quantum Well Heterostructure Lasers Grown on Silicon written by Derek Wusi Nam and published by . This book was released on 1987 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth of Aluminum Gallium Arsenide gallium Arsenide Graded Barrier Quantum Well Heterostructure Lasers with Various Buffer Layer Structures by Metalorganic Chemical Vapor Deposition written by Michael Eugene Givens and published by . This book was released on 1988 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth of Aluminum Gallium Arsenide gallium Arsenide Graded Barrier Quantum Well Heterostructure Lasers on Planar and Nonplanar Substrates by Metalorganic Chemical Vapor Deposition written by Michael Eugene Givens and published by . This book was released on 1992 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
