Download or read book Diode Pumped Passively Mode Locked 1079 Nm Nd CaGdAlO4 Laser Supported by the National Key Basic Research Program of China Under Grant No 2013CB922402 and the International Joint Research Program of the National Natural Science Foundation of China Under Grant written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : We demonstrate a diode-pumped passively cw mode-locked Nd:CaGdAlO 4 laser operating at 1079nm with a semiconductor saturable absorber mirror for the first time to the best of our knowledge. The threshold pump power of the laser is 180mW. A maximum average output power of 93mW is obtained under the pump power of 1.94 W. The pulse duration of the mode-locked pulses is 3.1 ps and the repetition rate is 157 MHz.

Download or read book Efficient Diode End Pumped Actively Q Switched Nd YLF SrWO4 Raman Laser Supported by the National Natural Science Foundation of China Under Grant Nos 11204160 61378032 and 61211120196 and the Shandong Province Science and Technology Research Projects Under Grant No 2010GGX10137 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : An efficient diode-end-pumped actively Q-switched Nd:YLF/SrWO4 Raman laser is demonstrated. The fundamental wave is 1047.0 nm and the corresponding first-Stocks wave is 1158.7 nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7 nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8.7 ns and the peak power is calculated to be 42.1 kW. The beam quality factors M 2 in horizontal and vertical directions are 1.3 and 1.5, respectively.

Download or read book Passively Q Switched Nd Cr YAG Laser Simultaneous Dual Wavelength Operation at 946 Nm and 1 3 m Supported by the National Basic Research Program of China Under Grant No 2013CB632704 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Single Mode 2 m GaSb Based Laterally Coupled Distributed Feedback Quantum Well Laser Diodes with Metal Grating Supported by the National Basic Research Program of China Under Grant No 2011CBA00608 and the Beijing Nature Science Foundation of China Under Grant written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diode pumped Kerr lens Mode locked Femtosecond Yb YAG Ceramic Laser Project Supported by the National Major Scientific Instrument Development Project of China Grant No 2012YQ120047 the National Natural Science Foundation of China Grant No 61205130 and the Fundamental Research Funds for the Central Universities China Grant No JB140502 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration.

Download or read book Yb doped Passively Mode locked Fiber Laser with Bi2Te3 deposited Project Supported by the National Natural Science Foundation of China Grant No 61378024 and the Natural Science Fund of Guangdong Province China Grant No S2013010012235 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this study we present an all-normal-dispersion Yb-doped fiber laser passively mode-locked with topological insulator (Bi2 Te3 ) saturable absorber. The saturable absorber device is fabricated by depositing Bi2 Te3 on a tapered fiber through using pulsed laser deposition (PLD) technology, which can give rise to less non-saturable losses than most of the solution processing methods. Owing to the long interaction length, Bi2 Te3 is not exposed to high optical power, which allows the saturable absorber device to work in a high power regime. The modulation depth of this kind of saturable absorber is measured to be 10%. By combining the saturable absorber device with Yb-doped fiber laser, a mode-locked pulse operating at a repetition rate of 19.8 MHz is achieved. The 3-dB spectral width and pulse duration are measured to be 1.245 nm and 317 ps, respectively.

Download or read book High Power Passively Q Switched Nd YAG Laser at 1112 Nm with a Cr4 YAG Saturable Absorber Supported by the Natural Science Foundation of Shandong Province Under Grant Nos ZR2015FM018 and ZR2014FM028 and the National Natural Science Foundation of China Under Grant written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Suppression of Electron and Hole Overflow in GaN based Near ultraviolet Laser Diodes Project Supported by the Science Challenge Project China Grant No Z2016003 the National Key R D Program of China Grant Nos 2016YFB0400803 and 2016YFB0401801 the National Natural Science Foundation of China Grant Nos 61674138 61674139 61604145 61574135 61574134 61474142 61474110 61377020 and 61376089 and the Beijing Municipal Science and Technology Project China Grant No Z161100002116037 written by and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In x Ga1– x N/GaN multiple-quantumwell (MQW) laser diode (LD), the Al composition of inserted p-type Al x Ga1– x N electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al x Ga1– x N hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al x Ga1– x N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al x Ga1– x N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.

Download or read book High Power Dual End Pumped Actively Q Switched Ho YAG Ceramic Laser Supported by the National Natural Science Foundation of China Under Grant Nos 61308009 61405047 and 50990301 the China Postdoctoral Science Foundation Funded Project Under Grant No 2015T80339 the Fundamental Research Funds for the Central Universities Under Grant No HIT NSRIF 2015042 and the Science Fund for Outstanding Youths of Heilongjiang Province Under Grant No JQ201310 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : We present a high-power Ho:YAG ceramic laser pumped at 1908 nm. Using a dual-end-pumped structure, the maximum continuous-wave output power of 48 W is obtained, corresponding to a slope efficiency of 70.4% with respect to the absorbed pump power. At actively Q-switched mode, the maximum average output power of 46 W and the minimum pulse width of 21 ns are achieved at a pulse repetition frequency of 20 kHz, corresponding to a peak power of approximately 109.5 kW. In addition, the beam-quality M 2 factor is found to be 1.4 at the maximum output power.