Download or read book Diluted Magnetic Semiconductor ZnO written by Kuldeep Chand Verma and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has different types of morphology formation that is generally dependent on synthesis conditions and dopant level. The band gap energy of ZnO and lattice defect formation are shown by photoluminescence technique. The room temperature ferromagnetism is described with bound magnetic polaron (BMP) model in which oxygen vacancies play a major role. However, the temperature-dependent conditions are responsible for ferromagnetic ordering. The first principle calculation is used for dopant ions in ZnO for their replacement of Zn2+ atoms in the wurtzite structure as well as magnetic contribution.

Download or read book Novel Diluted Magnetic Semiconductor Materials based on Zinc Oxide written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor (DMS) materials system which displays ferromagnetism above room temperature and to understand the origin of long-range ferromagnetic ordering in these systems. Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. For these devices we require a high efficiency of spin current injection at room temperature. Diluted magnetic semiconductors (DMS) can serve this role, but they should not only display room temperature ferromagnetism (RTFM) but also be capable of generating spin polarized carriers. Transition metal doped ZnO has proved to be a potential candidate as a DMS showing RTFM. The origin of ferromagnetic ordering in ZnO is still under debate. However, the presence of magnetic secondary phases, composition fluctuations and nanoclusters could also explain the observation of ferromagnetism in the DMS samples. This encouraged us to investigate Cu-doped(+ ư spin in the 2+ valence state) ZnO system as a probable candidate exhibiting RTFM because neither metallic Cu nor its oxides (Cu2O or CuO) are ferromagnetic. The role of defects and free carriers on the ferromagnetic ordering of Cu-doped ZnO thin films was studied to ascertain the origin of ferromagnetism in this system. A novel non-equilibrium Pulsed Laser Deposition technique has been used to grow high quality epitaxial thin films of Cu:ZnO and (Co, Cu):ZnO on c-plane Sapphire by domain matching epitxay. Both the systems showed ferromagnetic ordering above 300K but Cu ions showed a much stronger ferromagnetic ordering than Co, especially at low concentrations (1-2 %) of Cu where we realized near 100% polarization. But, the incorporation of Cu resulted in a 2-order of magnitude rise in the resistivity from 10-1 t.

Download or read book Zinc Oxide based Diluted Magnetic Semiconductors written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: During my graduate research I have synthesized materials known as diluted magnetic semiconductors (DMS) as epitaxial thin film structures using the process of pulsed laser deposition (PLD). These materials are envisioned to be of importance in the emerging field of spintronics where the charge as well as the spin of the charge carriers can be combined to yield unique functionalities to yield novel devices including, on-chip memories, ultra-low power devices etc. The material of interest in this dissertation was zinc oxide, a wide bandgap optoelectronic semiconductor. ZnO has a bandgap of 3.3 eV. It is an ideal candidate for spintronics applications, because Zn is the last of the first row transition metals, which leads to pretty high solubility of transition metals such as Co, Mn and V in ZnO. In a diluted magnetic semiconductor a fraction of the host atoms is substituted by the transition metal dopant ion. We have found that we can synthesize very high quality, single phase and single crystalline Zn(TM)O thin films on basal plane sapphire single crystals (a-Al2O3). We have analyzed the magnetic properties of the three systems of ZnVO, ZnCoO and ZnMnO and found that ZnCoO and ZnMnO exhibit ferromagnetic ordering up to room temperature, when synthesized under high vacuum. In these conditions, the samples have a reasonable concentration of point defects which drive ZnO to n-type conductivity. By a combination of insitu and exsitu variation of parameters we have been able to tune the electronic and magnetic properties of these systems. From these studies we conclude that the main mechanism of magnetic ordering in these DMS materials is through a combination of defect related carrier induced exchange and bound magnetic polaron exchange. Device structures were fabricated using the as deposited samples to study the possibility of spin injection through semiconductors. We have observed that at low temperatures we see a considerable effect from this phenomenon in a m.

Download or read book Nanostructured Metal Oxides and Devices written by M. K. Jayaraj and published by Springer Nature. This book was released on 2020-04-16 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures – their optical and electrical properties – are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

Download or read book Transition Metal Doped Zinc Oxide as Diluted Magnetic Semiconductor written by Zheng Zuo and published by . This book was released on 2013 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition metal doped ZnO has been proposed to be a Diluted Magnetic Semiconductor with room temperature ferromagnetism. High quality Mn doped ZnO was grown on R-sapphire substrate. Results support intrinsic ferromagnetism, while [Mu]B/ion number was found to be larger than maximum permitted by Hund's law. Saturation strength and coercivity field was found to be manipulated by varying Mn doping concentration. Mn/Ag co-doping was found to alter saturation strength and coercivity field as well. Ag was investigated as substitution dopant to achieve high quality p-type ZnO. With optimization of growth parameters, phase segregation was suppressed and p-type was observed. Besides being p-type, Ag doped ZnO was found to exhibit room temperature ferromagnetism. This is the first high quality demonstration of Ag doped ZnO as DMS.

Download or read book A Treatise on First principles Studies of ZnO as Diluted Magnetic Semiconductor written by Sanjeev Kumar Nayak and published by . This book was released on 2012 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Novel Diluted Magnetic Semiconductor Materials Based on Zinc Oxide written by Deepayan Chakraborti and published by . This book was released on 2007 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Cu doped ZnO, Thin Film Epitaxy, Structure-Property Correlation, Ferromagnetism, Spintronic, Magnetoresistance.

Download or read book Study of Diluted Magnetic Semiconductors the Case of Transition Metal Doped ZnO written by Zlatko Micković and published by . This book was released on 2010 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Diluted Magnetic Semiconductors written by Zlatko Micković and published by . This book was released on 2010 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ZnO based Diluted Magnetic Semiconductors for Applications in the Field of Spintronics written by Mariana-Mihaela Ungureanu and published by . This book was released on 2007 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Zinc Oxide written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2008-12-03 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices. Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.

Download or read book Structural and Magnetic Properties of Zno Doped with Mn and Co written by Vijay Kumar Sharma and published by LAP Lambert Academic Publishing. This book was released on 2010-12 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO based Diluted magnetic semiconductors (DMSs) have attracted broad interest for their promise functionalities in spintronics based devices. In this book, we explored the effect of different synthesis techniques (solid-state, sol-gel and chemical vapor deposition (CVD) methods) and synthesis parameters (sintering temperature, doping concentration, annealing atmosphere) on the structural and magnetic properties of TM (Mn, Co) doped ZnO. The effect of Al/Sb codoping on the magnetic properties of ZnMnO and ZnCoO were studied. We also explored the structural, optical and magnetic properties of nanowires and nanorods of Mn doped ZnO for their potential in spintronics based devices. From the experimental results presented in this book, it is concluded that defects like oxygen vacancies, zinc vacancies etc. in the samples are important for room temperature ferromagnetism in ZnO based DMSs.

Download or read book Zinc Oxide Based Diluted Magnetic Semiconductors written by Shivaraman Ramahandran and published by . This book was released on 2006 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: optoelectronics, spintronics, magneto-transport, thin films, magnetic, Diluted magnetic semiconductors, epitaxy, transmission electron microscopy, tunnel junction, magneto-resistance, spin injection.

Download or read book Optoelectronic and Structure Properties of Diluted Magnetic Semiconductor Based on ZnO Nanorods written by 劉宗維 and published by . This book was released on 2014 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ZnO and Their Hybrid Nano Structures written by Gaurav Sharma and published by Materials Research Forum LLC. This book was released on 2023-06-05 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO and its hybrid nanostructures have unique optical, physical and chemical properties. The book covers recent trends in processing techniques and applications. Topics include solar cells, photo-voltaic devices, fuel cells, uv filters, lasers, light-emitting diodes, photo-detectors, spin-tronic devices, magnetic semiconductors, nano-generators, piezotronics, photo-catalytic applications against harmful organic pollutants like dyes, heavy metals, antibiotics, and sensors such as bio sensors, chemical sensors, gas sensors. Keywords: ZnO, Nano ZnO, Point Defects, Magnetic Semiconductors, Hybrid Nanostructures, Cell Applications, Nanoadsorbant for Heavy Metal Removals, Diagnostics, ZnO Nano-Carriers, ZnO Thin Films Fabrication.

Download or read book Doping in Zinc Oxide Thin Films written by Zheng Yang and published by . This book was released on 2009 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 10 to 1.8 x 10 cm -3, the dominant PL line at 9 K changes from I 1 (3.368 - 3.371 eV), to I DA (3.317 - 3.321 eV), and finally to I 8 (3.359 eV). The dominance of I, due to ionized donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that I DA has characteristics of a donor acceptor pair transition, and use a detailed, quantitative analysis to argue that it arises from Ga Zn donors paired with Zn-vacancy (V Zn) acceptors. In this analysis, the Ga Zn 0/+ energy is well-known from two-electron satellite transitions, and the V Zn 0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p -type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature T C were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ~10 19 cm -3, indicating a carrier-mediated mechanism for ferromagnetism. The anomalous Hall effect was observed in the ZnO:Co thin films. The anomalous Hall coefficient and its dependence on longitudinal resistivity were analyzed. The presence of a side-jump contribution further supports an intrinsic origin for ferromagnetism in ZnO:Co thin films. These observations together with the magnetic anisotropy and magnetoresistance results, supports an intrinsic carrier-mediated mechanism for ferromagnetic exchange in ZnO:Co diluted magnetic semiconductor materials. Well-above room temperature and electron-concentration dependent ferromagnetism was observed in n -type ZnO:Mn films, indicating long-range ferromagnetic order. Magnetic anisotropy was also observed in these ZnO:Mn films, which is another indication for intrinsic ferromagnetism. The electron-mediated ferromagnetism in n -type ZnO:Mn contradicts the existing theory that the magnetic exchange in ZnO:Mn materials is mediated by holes. Microstructural studies using transmission electron microscopy were performed on a ZnO:Mn diluted magnetic semiconductor thin film. The high-resolution imaging and electron diffraction reveal that the ZnO:Mn thin film has a high structual quality and is free of clustering/segregated phases. High-angle annular dark field imaging and x-ray diffraction patterns further support the absence of phase segregation in the film. Magnetotransport was studied on the ZnO:Mn samples, and from these measurements, the temperature dependence of the resistivity and magnetoresistance, electron carrier concentration, and anomalous Hall coefficient of the sample is discussed. The anomalous Hall coefficient depends on the resistivity, and from this relation, the presence of the quadratic dependence term supports the intrinsic spin-obit origin of the anomalous Hall effect in the ZnO:Mn thin film.

Download or read book Thin Films of Mn doped Zinc Oxide Diluted Magnetic Semiconductor Materials Spintronics written by Usman Ilyas and published by . This book was released on 2014 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: