Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by and published by . This book was released on 2011 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Graphene Ge III V and Emerging Materials for Post CMOS Applications 2 written by P. Srinivasan and published by The Electrochemical Society. This book was released on 2010-04 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
Download or read book Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 4 written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Mobility and Quantum Well Transistors written by Geert Hellings and published by Springer Science & Business Media. This book was released on 2013-03-25 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Download or read book Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 4 written by Electrochemical Society and published by ECS Transactions. This book was released on 2012-04 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.
Download or read book Graphene Ge III V and Emerging Materials for Post CMOS Applications 5 written by and published by . This book was released on 2013 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems 3 Materials Science Processing Reliability and Manufacturing written by D. Misra and published by The Electrochemical Society. This book was released on 2008-05 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
Download or read book Dielectrics for Nanosystems 5 Materials Science Processing Reliability and Manufacturing And Tutorials in Nanotechnology written by Electrochemical Society and published by ECS Transactions. This book was released on 2012-04 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue will cover papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems. Beyond CMOS device structures and properties of semiconductor nanoelectronics will also be included.
Download or read book Dielectrics for Nanosystems written by and published by The Electrochemical Society. This book was released on 2004 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems 5 written by and published by . This book was released on 2012 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems II written by D. Misra and published by The Electrochemical Society. This book was released on 2006 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
Download or read book Graphene and III V Channel Metal oxide semiconductor Field effect Devices for Post Si CMOS Applications written by Michael Edward Ramón and published by . This book was released on 2013 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: To meet the demands for continuous transistor scaling and performance improvements required by the ITRS, there has been a tremendous amount of effort related to alternative high mobility channel materials as potential Si replacements for MOSFET fabrication. Two particularly attractive material systems include III-V substrates and graphene. Thus far, the high trap density which characterizes high-k dielectrics and the III-V/high-k dielectric interface remains an obstacle to III-V substrate integration. In a first aspect of this work, charge traps within the gate stack of III-V MOSFETs, as well as at the III-V/dielectric interface, were examined to better understand their impact on III-V device performance. In particular, a pulsed I-V measurement technique was used to assess the impact of fast and slow transient charging effects on various III-V transistors with ALD-deposited Al2O3 gate dielectric. The charge pumping technique was also utilized to determine the density of interface traps, including their energy distribution and position profile, providing further understanding into the nature of traps in the III-V/high-k system. Graphene has also attracted considerable interest owing to its high intrinsic mobility, large current densities, thermodynamic and mechanical stability. Yet, a primary challenge to the integration of graphene substrates is the lack of high quality, large-area graphene. Thus, in another aspect of this work, large-area graphene was synthesized by CVD of acetylene on Co thin films, and the influence of Co film thickness on graphene synthesis was studied. Resulting graphene films were characterized using Raman spectroscopy and back-gated GFETs were fabricated. Taking advantage of graphene’s intrinsic ambipolar electron-hole symmetry, GFET frequency doublers were fabricated on low-capacitance, single-crystal quartz substrates. GFETs frequency doublers were found to operate beyond their transit frequency (fT), and in the limit of vanishing device non-idealities, their maximum conversion gain was determined to approach a near lossless value. To further understand and improve GFET RF performance, the impact of parasitic resistances was experimentally examined. RF measurements as a function of temperature and modulated access resistance highlight the strong influence of RC on scaled devices, while the impact of RA becomes more evident for devices with large access regions.
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Download or read book Triboelectric Nanogenerators written by Zhong Lin Wang and published by Springer. This book was released on 2016-08-17 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces an innovative and high-efficiency technology for mechanical energy harvesting. The book covers the history and development of triboelectric nanogenerators, basic structures, working principles, performance characterization, and potential applications. It is divided into three parts: Part A illustrates the fundamental working modes of triboelectric nanogenerators with their prototype structures and theoretical analysis; Part B and Part C introduce two categories of applications, namely self-powered systems and self-powered active sensors. The book will be an ideal guide to scientists and engineers beginning to study triboelectric nanogenerators or wishing to deepen their knowledge of the field. Readers will be able to place the technical details about this technology in context, and acquire the necessary skills to reproduce the experimental setups for fabrication and measurement.
Download or read book Frontiers of Graphene and Carbon Nanotubes written by Kazuhiko Matsumoto and published by Springer. This book was released on 2015-03-05 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development.
Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
