Download or read book Device Fabrication and Characterization for Alternative Gate Stack Devices written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Device Fabrication and Characterization for Alternative Gate Stack Devices written by Indong Kim and published by . This book was released on 2003 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: MOSFET, Scaling, High-K, Metal Gate, Silicate, HfO2.
Download or read book Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self Aligned Gate Process written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to improve MOSFET transistor performance, aggressive scaling of devices has continued. As lateral device dimensions continue to scale down, gate oxide thicknesses must also be scaled down. According to the 2001 International Technology Roadmap for Semiconductor (ITRS) for sub-micron technology, an equivalent oxide thickness (EOT) less than 1.0 nm is required for high performance devices. However, at this thickness SiO2 has reached its scaling limit due to the high tunneling current, especially in low power devcies. The use of high K dielectrics may circumvent this impediment since physically thicker dielectrics can be used to reduce gate leakage while maintaining the same level of inversion charge. In this study, we used an alternative, non self-aligned gate process to fabricate both NMOS and PMOS devices with a variety of high K gate dielectric and metal gate electrode materials; finally their electrical properties were characterized. Most high K gate dielectric and gate metal candidates have limited thermal stability. As a result, conventional transistor fabrication process flows cannot be used. Here we developed a non self-aligned gate process, which reverses the order of the junction and the gate stack formation steps and thus allow the use of dielectrics and electrode materials that are not able to sustain high junction activation temperatures. A new mask set, ERC-6, was designed to facilitate the non-self aligned gate process. Wet and dry etching process for alternative high K gate dielectrics (HfO2, ZrO2, La2O3, Y2O3) and metal gate electrodes (Pt, Ru, RuO2, Ta, TaN) were studied. Wet etching of Pt and TaN required periodic re-baking of the photoresist to re-establish adhesion to the substrate. Reactive ion etch (RIE) processes were developed for RuO2, Ru/W, Ta/W gate electrodes. A mixture of oxygen and fluorine plasma was effective in patterning RuO2 electrodes. However, for Ru gate electrodes, e.
Download or read book Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self aligned Gate Process written by Sungkee Han and published by . This book was released on 2003 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: device integration, metal gate electrode, high K dielectric, non-self aligned gate process.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Download or read book Advanced Gate Stack Source drain and Channel Engineering for Si based CMOS written by and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation has focused on fabrication and characterization of alternative gate stacks consisting of high-K dielectrics and metal gates. This work has presented the evaluation of Ta based metals including Ta, TaNx, and TaSixNy as gate electrodes for their potential use in NMOS devices. For bulk CMOS devices, gate metals must have work functions that are near the conduction and valence band edges of Si. Although several metal gate electrodes have been identified for SiO2 dielectrics based on their work function, thermal stability and carrier concentration, their compatibility with high-K dielectrics is not fully understood. The questions that need to be addressed include thermal stability of metals on high-K, work function values, Fermi level pinning and performance. In this work, we report on the characteristics of metal gate electrodes on SiO2 and HfO2-based dielectrics with respect to equivalent oxide thickness (EOT), flatband voltage (VFB), leakage, work function and thermal stability. The research indicated that the workfunction of TaSixNy is compatible with NMOS devices, provided the right composition is achieved. The improved stability of TaSixNy gates is attributed to the presence of Si and N in the gate electrode, which can improve the film microstructure and the diffusion barrier properties at the gate-dielectric interface. This stability of TaSixNy films may enable high-k dielectrics and metallic electrode to be implemented in advanced CMOS devices. An equivalent oxide thickness of 11.2Å was obtained in TaSixNy /HfO2/p-Si MOS capacitor, while maintaining low leakage current density of 4.1 x 10-2A/cm2 at Vg-VFB=-1V in accumulation. A less EOT increase(~3 Å) was observed with TaSixNy gates compared to other gates (Ta, TaNx, and Ru) due to the excellent oxygen barrier properties of TaSixNy gates, preventing oxygen diffusion into the dielectric through gate electrode and dielectric during annealing. It was observed that trapped charge was incre.
Download or read book The Fabrication and Characterization of MOSFETs with Titanium Dioxide and Hafnium Dioxide as Gate Dielectrics written by Tiezhong Ma and published by . This book was released on 2001 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer. This book was released on 2007-11-21 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cleaning Technology in Semiconductor Device Manufacturing written by and published by . This book was released on 2003 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Holistic Investigation of Alternative Gate Stack Materials for Future CMOS Applications written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High dielectric constant (high-k) insulators metal gate electrodes are important for advanced MOS devices to limit gate leakage by increasing gate capacitance with ultimately thicker films and eliminate poly-depletion & dopant diffusion, respectively. Reactions between dielectric⁄substrate and gate electrode⁄dielectric during deposition or post-deposition processing lead to an increase in interfacial layer formation, and the mechanisms that control the changes need to be well understood. We investigate yttrium-based and hafnium-based high-k dielectrics and ruthenium-based gate electrodes formed by various processing methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) on Si(100). Characterization techniques include IR, XPS, TEM, EELS, AES, and IV and CV electrical analysis. During deposition and post-deposition treatments the interfaces have some extent of interfacial layer formation. The extent of the intermixing depends on substrate surface preparation, process conditions, and annealing conditions. The transition metal alluminate dielectrics show evidence on flatband voltage tuning via charge compensation. Also, the ruthenium gate electrodes show that process condition can have a direct effect the electronic and chemical properties of MOS structures such as in-situ versus ex-situ capacitor fabrication and the role of subsurface adsorbed oxygen in ruthenium.
Download or read book Cleaning Technology in Semiconductor Device Manufacturing VIII written by Jerzy Rużyłło and published by The Electrochemical Society. This book was released on 2004 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 4 New Materials Processes and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book Advanced Ultra Low Power Semiconductor Devices written by Shubham Tayal and published by John Wiley & Sons. This book was released on 2023-10-30 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Download or read book CMOSET 2013 Abstracts written by CMOS Emerging Technologies Research and published by CMOS Emerging Technologies. This book was released on with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
