Download or read book Thermal Design and Characterization of Heterogeneously Integrated InGaP GaAs HBTs written by and published by . This book was released on 2016 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I-V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e., positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III-V/Si heterogeneously integrated electronics.

Download or read book Package Electrical Modeling Thermal Modeling and Processing for GaAs Wireless Applications written by Dean L. Monthei and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the practical aspects of electrical and thermal modeling of packages. In addition, processing concerns for plastic packaged GaAs parts are also covered. The book emphasizes low cost industry standard packages. However, the principles involved translate well to other categories of packages. Digital issues such as crosstalk are well documented in other books and are therefore not covered in detail in this text. The principles for generation of equivalent circuit package models applies to both digital and analog parts. Digital designers and packaging engineers should still find this text useful. Subtleties often overlooked by standard methods of modeling packages for digital applications are considered and will become more important to the digital packaging engineer as frequencies continue to increase. It is hoped this book will be useful to both microwave and digital integrated circuit (Ie) designers as well as packaging engineers. In the past these disciplines were distinct. Packaging engineers typically were concerned with only materials and mechanical issues of the package. As long as there was an electrical connection made from the die to the external pin, packaging engineers had the freedom to do anything they wanted between these two points. At high frequency the issues change. Packaging engineers now have to work with die level designers to either create a package that performs well at high frequencies or to use readily available low cost packages that happen to meet the needs of the application.

Download or read book Electrothermal Harmonic Balance Simulation of an INGAP GAAS HBT Based on 3D Thermal and Semiconductor Transport Models written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parallel implementation of the direct coupling of InGaP/GaAs HBT transport equations has been included in an Harmonic Balance simulator. Several results such as a class AB amplifier for mobile communication study and a stability analysis of "crunch effect" in multi-finger HBT have been performed.

Download or read book Fabrication and Modeling of InGaP GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1998 with total page 1234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

Download or read book Effects of Self heating on Parameter Extraction for GaInP GaAs HBT Nonlinear Models written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper addresses the issues involved in developing a large-signal heterojunction bipolar transistor (HBT) model with particular emphasis on the role self-heating plays in the parameter extraction process. Starting from a physical analysis of the device, a novel, equivalent-circuit DC model is proposed which models both base and collector currents separately. However self-heating will play a large role in any measurements used in any associated parameter extraction technique developed in conjunction with the model. Therefore a thermal sub-circuit representing the device is first created both from measurements and knowledge of the transistor's physical properties. All DC parameters are then extracted from forward and reverse Gummel plots taken at several ambient temperatures which have had the effects of self-heating removed using a novel "thermal de-embedding" technique. S-parameter measurements made from 45MHz to 20GHz allow for determination of the model's dynamic elements to complete the large signal model. Finally, for verification purposes. DC output characteristics and several single-tone power sweep measured results are given which show good agreement with simulated behaviour.

Download or read book Ledge Design of InGaP Emitter GaAs Based HBTs written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters. Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device. For state-of-the-art HBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI). In light of previously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dc current gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure. Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply to reliability as well as to the demonstrated gain stability.

Download or read book Physics based Modeling and Characterization of InGaP HBTs written by Sergey Cherepko and published by . This book was released on 2003 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics-based approach to the compact modeling of GaAs-based and InP-based HBTs is described. Detailed analysis of device operation and topology is utilized in order to include physical effects that are specific to the AlGaAs/GaAs HBTs, InGaP/GaAs HBTs, InP/InGaAs HBTs and at the same time to avoid modeling effects that are not relevant. Among the effects incorporated into the model are self-heating, base push-out (Kirk effect), non-trivial bias dependence of transit times and depletion capacitances, base-collector diffusion charge in saturation and quasi-saturation, non-quasi-static effects in both base and collector regions. It is shown that the non-quasi-static effects can be naturally added to the quasi-static model without further complicating equivalent circuit topology. The result is a concise but capable large-signal compact model together with a clear and practical extraction procedure for model parameters. The model is designed to be compatible with the majority of the today's industry-standard compact BJT models (VBIC, MEXTRAM, HICUM, UCSD). This allows simple mapping of the proposed model into any of the industry-standard ones hence alleviating problems associated with implementation of a user-defined model. An example of conversion into the VBIC model is also presented.

Download or read book Thermal Effects and Analysis of High Frequency Devices in Analog Integrated Circuit Design written by Ardasheir Sayek Rahman and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction Bipolar Junction Transistors (HBTs) are used in various high frequency applications in modern day technology. These devices produce high trans-conductance which is need for high frequency application. Their gain is significantly larger than complimentary metal-oxide-semiconductor (CMOS) devices which also imply there is high current within the devices. Since HBTs are very compact structure, the thermal heating generated within the devices needs to be characterized. This thesis explores the thermal effects from self heating in the static and time domains of the devices using 3D dimensional simulation and mathematical modeling using heat flow equation. The study concentrates on the thermal modeling aspects of the heterojunction bipolar transistors using the TCAD 3-dimensional thermal simulation. Die concentration and operational speed of transistors are rapidly increasing because of high market a demand, which can lead to thermal runaway complication and current crowding effect. The susceptibility of transistors to temperature change requires a more sensitive and accurate modeling for the thermal effects of the device. The heat source is the junction between base and lightly doped collector. This heat gets trapped within the device because of the presence of isolation oxide sidewalls and bottom oxide layer. The thermal impedance depends on the position of the heat source, its separation from the sidewalls and bottom oxide, as well as the thickness of the oxide wall and bottom. The thickness of the wafer also changes the thermal heating effect. The spreading resistance from the heat source to the sidewalls and bottom oxide, to the wafer, and then to ambient temperature has been calculated using the heat flow equation. The results are then compared to TCAD simulation. The mathematical model was within 10% when compared to the 3D TCAD simulation. The model presented in this work is based on an extension of the constant angle heat spreading, resulting in closed form expressions which can be used for practical applications. The electrical analogy developed from the thermal analysis can be used in VBIC, HICUM and MEXTRAM compact models, which are used to model the behavior of HBTs. Solder bump packaging results to the formation of a thermal equivalent transmission line for the heat flow from the heat source to the ambient temperature at the bumps. This paper analyses the effect of thermal heating when devices are connected using solder bumps. TCAD simulation is performed and mathematical model is developed to support the 3-D simulation result. The thermal impedance depends on the length of line from the heat source to the solder bumps, which is modeled by using electrical transmission line analogy. Closer the solder bump is to the device smaller is be thermal resistance, other tactics are discussed which can reduce the thermal resistance. An infinitely long line results in a static characteristic impedance for the line. The equivalent electrical analogy for the thermal transmission line is modeled which can be implemented in standard device modeling s like HICUM, VBIC or METRAM.

Download or read book Continuous Time Delta Sigma Modulators for High Speed A D Conversion written by James A. Cherry and published by Springer Science & Business Media. This book was released on 2006-04-18 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Among analog-to-digital converters, the delta-sigma modulator has cornered the market on high to very high resolution converters at moderate speeds, with typical applications such as digital audio and instrumentation. Interest has recently increased in delta-sigma circuits built with a continuous-time loop filter rather than the more common switched-capacitor approach. Continuous-time delta-sigma modulators offer less noisy virtual ground nodes at the input, inherent protection against signal aliasing, and the potential to use a physical rather than an electrical integrator in the first stage for novel applications like accelerometers and magnetic flux sensors. More significantly, they relax settling time restrictions so that modulator clock rates can be raised. This opens the possibility of wideband (1 MHz or more) converters, possibly for use in radio applications at an intermediate frequency so that one or more stages of mixing might be done in the digital domain. Continuous-Time Delta-Sigma Modulators for High-Speed A/D Conversion: Theory, Practice and Fundamental Performance Limits covers all aspects of continuous-time delta-sigma modulator design, with particular emphasis on design for high clock speeds. The authors explain the ideal design of such modulators in terms of the well-understood discrete-time modulator design problem and provide design examples in Matlab. They also cover commonly-encountered non-idealities in continuous-time modulators and how they degrade performance, plus a wealth of material on the main problems (feedback path delays, clock jitter, and quantizer metastability) in very high-speed designs and how to avoid them. They also give a concrete design procedure for a real high-speed circuit which illustrates the tradeoffs in the selection of key parameters. Detailed circuit diagrams, simulation results and test results for an integrated continuous-time 4 GHz band-pass modulator for A/D conversion of 1 GHz analog signals are also presented. Continuous-Time Delta-Sigma Modulators for High-Speed A/D Conversion: Theory, Practice and Fundamental Performance Limits concludes with some promising modulator architectures and a list of the challenges that remain in this exciting field.

Download or read book Advanced SPICE Model for GaN HEMTs ASM HEMT written by Sourabh Khandelwal and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Distortion in RF Power Amplifiers written by Joel Vuolevi and published by Artech House. This book was released on 2003 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.