Download or read book Design Fabrication and Analysis of a Gallium Arsenide Heterojunction Bipolar Transistor written by Edward David Goff and published by . This book was released on 1991 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of High performance Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Michael Thomas Fresina and published by . This book was released on 1996 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, linearity, power efficiencies, current handling capabilities, and speeds available with HBT technology make this device attractive for a wide variety of applications from wireless communications to high-speed analog-to-digital converters. Companies across the United States are investing millions of dollars in developing HBT products and manufacturing capabilities. A manufacturable fabrication process for state-of-the-art InGaP/GaAs HBTs has been established. The process features nonalloyed emitter metal, self-aligned emitter and collector etches, self-aligned base metal, mesa isolation, polyimide planarization, and an air bridge metallization. A citric acid-based, selective GaAs etch has been developed for use in the self-aligned emitter etch/base metallization process. The etch has demonstrated excellent control and the uniformity necessary for high-yield wafer processing. The citric acid etch has also been used to implement the selective collector etch which minimizes the base-collector parasitic capacitance. An evaporated gold air bridge process has been developed and replaces a plated gold process, thereby improving yield and quality. State-of-the-art InGaP/GaAs HBTs have been developed. A baseline device structure and the standard fabrication process have consistently produced devices with a common-emitter current gain $beta>50,$ a common-emitter breakdown voltage $BVsb{rm CEO}>10$ V, a current gain cutoff frequency $fsb{rm T}>50$ GHz, and a maximum frequency of oscillation $fsb{rm max}>100$ GHz. Advanced device structures have been investigated for improving device performance and $fsb{rm T}$'s as high as 93 GHz, and $fsb{rm max}$'s as high as 197 GHz have been achieved. For power applications, InGaP/GaAs double heterojunction bipolar transistors (DHBTs) were analyzed and a composite collector structure has been optimized to improve DHBT operating characteristics. Finally, a submicron, self-aligned emitter ledge structure has been demonstrated, which is formed using wet chemical selective etches and does not require additional masking layers as do present ledge fabrication technologies. Presently, the leading HBT material technology is AlGaAs/GaAs. However, the InGaP/GaAs material system offers significant advantages in device performance and manufacturability. The band alignment of InGaP/GaAs improves device performance and the absence of aluminum in the emitter improves noise characteristics and long-term reliability. In addition, the availability of highly selective etch chemistries makes it easier to manufacture InGaP/GaAs HBTs. This work demonstrates the manufacturability and performance potential of InGaP/GaAs HBTs.

Download or read book The Design Fabrication and Characterization of High performance Self aligned Gallium Arsenide aluminum Gallium Arsenide and Gallium Arsenide gallium Indium Arsenide aluminum Gallium Arsenide Heterojunction Bipolar Transistors written by Dean Winston Barker and published by . This book was released on 1989 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of Aluminum Gallium Arsenide written by Melih Özaydin and published by . This book was released on 1991 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of Laterally Etched Undercut Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Dennis Wayne Scott and published by . This book was released on 1999 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Modeling of InGaP GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 1990-10-31 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.

Download or read book Design and Fabrication of Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors written by Hong Wu and published by . This book was released on 2003 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book DESIGN OF GALLIUM ARSENIDE AND INDIUM PHOSPHIDE BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH SPEED PERFORMANCE GALLIUM ARSENIDE INDIUM PHOSPHIDE written by JUNTAO HU and published by . This book was released on 1991 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: latter devices are 2.17, 1.02 and 1.11 ps, respectively.

Download or read book Characterization Modeling and Fabrication of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Melih Özaydin and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computer aided Design and Processing of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter size Effects written by Lynnita Kaye Knoch and published by . This book was released on 1989 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis Modelling of Gallium Arsenide Heterojunction Bipolar Transistor Mixers written by Bernard Anthony Xavier and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication Characterization and Modeling of NPN InGaP GaAs Heterojunction Bipolar Transistors written by Ying Wu and published by . This book was released on 1996 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide gallium Arsenide and Indium Aluminum Arsenide indium Gallium Arsenide Heterojunction Bipolar Transistors written by Saied Tadayon and published by . This book was released on 1990 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book InGaP GaAs Heterojunction Bipolar Transistors and Phototransistors written by Jowan Masum and published by . This book was released on 1997 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of AlGaAs GaAs Hetero junction Bipolar Transistors with Sub micron Passivation Ledges written by Changhong Dai and published by . This book was released on 1996 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: