Download or read book Design and Performance Optimization of Low Phase Noise SiGe HBT Amplifiers for Si Photonics Integrated Opto Electronic Oscillator written by Devan Bulsara and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highly stable radio-frequency (RF) local oscillators (LO) are critical for low error rate digital signal detection systems. For example, a highly stable clock signal is required for sample and hold of analog signals while superheterodyne detection systems require coherent LO's for terrestrial, deep space, and Wi-Fi communication. Opto-electronic oscillators (OEO) are well known for their broadband frequency tuning and low aperture jitter characteristics. To design a stable LO (StLO), any phase errors that contribute to the phase modulation (PM) of the oscillation frequency must be minimized. Any low frequency noise could be upconverted to the RF carrier frequency using nonlinear phase modulation to phase error (PM-PM) and amplitude modulation to phase modulation (AM-PM) conversion. To reduce the overall noise added into the StLO, RF circuit design should consider devices manufacturing process with low amplitude and phase noise at given optimum operation point of transistor and appropriate amplifier design topologies. The goal of this thesis is to explore optimum amplifier designs with low phase noise that could be integrated as part of a self-forced OEO design. This amplifier is designed using silicon germanium (SiGe) heterojunction bipolar transistor (HBT) technology from low-phase noise perspective. The RF integrated circuit (RFIC) is based on the TowerJazz (now Tower) foundry service. Key elements for the optimal performance of the HBT include optimization of gain and low noise based on transition frequency (fT), maximum frequency (fmax), maximum stable gain, minimum noise figure, and its phase variation sensitivity with the operation point variation of HBT transistor to DC bias point variations. An optimal bias point is found by considering reduced phase error due to the transistor operation point. Using the optimal HBT bias point of operation, a variety of Class A amplifiers are considered for high linearity. Particularly amplifiers including common emitter, cascade, and transimpedance amplifier (TZA) are analyzed in terms of operation from 1mA to 30mA and compared in terms of gain, noise figure, and AM-PM conversion contribution to single sideband (SSB) phase noise at various bias. All predicted SSB phase noise reported in this thesis are at 100kHz offset of 10GHz carrier frequency. Actively biased single stage CE amplifier has a simulated gain of 14.3 dB and a noise figure of 1.6 dB at 12mA. In terms of the nonlinear mixing of low frequency noise as a PM-PM conversion, the actively biased single stage amplifier has a phase noise contribution of -147.8 and -167.25 dBc/Hz with respect to the upper and lower sidebands, respectively. This amplifier design also has an AM-PM conversion contribution to phase noise of -328 dBc/Hz. In addition, the design of a cascade amplifier provided a gain as high as 28.4 dB and a noise figure of 2.9 dB at 10 GHz with the calculated SSB phase noise associated with the AM-PM conversion of -82 dBc/Hz. When considering the TZA, a broadband transimpedance of 11 dB [omega] is predicted over 2 to 18 GHz. The TZA design also is seen to have an AM-PM conversion contribution SSB phase noise of -141 dBc/Hz. The TZA cascaded with previously designed single stage amplifier provides a transimpedance of 18.6 dB [omega] at and SSB phase noise due AM-PM conversion of -102 dBc/Hz at 10 GHz. Lastly, a TZA cascaded with the dual-stage amplifier design was designed in this work to provide a transimpedance of 25.4 dB [omega] at 10 GHz. At this frequency, an AM-PM conversion contribution to SSB phase noise of -90 dBc/Hz was observed.

Download or read book Residual Phase Noise Modelling of Silicon Bipolar Amplifiers and Ultra Low Phase Noise Ceramic Dielectric Resonator Oscillators written by Konstantinos Theodoropoulos and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes research into the modelling of residual 1/ f phase noise for Si bipolar amplifiers operating in the linear region and the design construction and measurements of L-Band (1.2 GHz) and C-Band (4.2 GHz and 4.6 GHz) ceramic dielectric resonator based ultra low phase noise oscillators using Si devices. It proposed and demonstrated that for Si bipolar amplifiers the 1/ f phase noise is largely due to the base emitter recombination flicker noise. The up conversion mechanism is described through linear approximation of the phase variation of the amplifier phase response by the variation of the device parameters (Cbc, Cbe, gm, re) caused by the recombination 1/ f noise. The amplifier phase response describes the device over the whole frequency range of operation where the influence of the poles and zeros is investigated. It is found that for a common emitter amplifier it is sufficient to only incorporate the effect of the device poles to describe the phase noise behaviour over most of its operational frequency range. Simulations predict the measurements of others including the flattening of the PM noise at frequencies beyond f3dB, not predicted by previous models. A novel ceramic dielectric resonator based oscillator at 1.2 GHz is described. The oscillator achieves phase noise of -171.8 d. Bc] Hz at 10 kHz offset and ~ 144.5 d. Bc] H z at 1 kHz which is the lowest noise reported in the literature at this frequency band. To achieve these results extensive optimisation of amplifiers has been taken place. For example the amplifiers used in the oscillator produce a very low phase noise better than -182 dBc / Hz at 10 kHz and -175 dBc / Hz at 1 kHz offset from the carrier respectively. Also low residual phase noise narrow band tuning and high power handling phase shifters are reported for the use in oscilIator. Two oscillators at C-Band (4.2 GHz and 4.6 GHz) based on ceramic resonators are described. The 4.2 GHz Oscillator provides a phase noise of -153 dBc/ Hz at 10 kHz and -128 dBc/ Hz at 1 kHz offset from the carrier, which is the lowest reported in literature for that type of oscillators. The 4.6 GHz oscillator phase noise is -149 d. Bc/Hz at 10 kHz and -119.2 d. Bc/Hz at 1 kHz offsets respectively. Both oscillators used the same configuration and the same amplification devices and topology. The improved performance is mainly due to the use of low residual phase noise silicon bipolar amplifiers operated in a push pull configuration, where in literature amplifiers employing SiGe HBTs have been used.

Download or read book Low Voltage Low Phase Noise and Wide Tuning Range Integrated Oscillator Design written by Ping-Wing Lai and published by . This book was released on 2006 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: An on-chip tapped inductor technique is shown to be one of the efficient methods for reducing oscillator phase noise. Higher signal amplitude can be achieved while avoiding breakdown and without penalty in area, tuning range, FOM and supply voltage. Two commercial SiGe BJT and InGaP-GaAs HBT processes were used to fabricate a 2.4GHz and 1GHz VCO respectively.

Download or read book Modeling and Scaling Limitations of SiGe HBT Low frequency Noise and Oscillator Phase Noise written by and published by . This book was released on 2006 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of Low Noise Amplifiers for Ultra Wideband Communications written by Roberto Díaz Ortega and published by McGraw Hill Professional. This book was released on 2014-01-13 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cutting-edge techniques for ultra-wideband, low-noise amplifier design This pioneering resource presents alternatives for implementing power- and area-efficient integrated low-noise amplifiers for ultra-wideband communications. Design methodologies for distributed amplifiers, feedback amplifiers, inductor structures with reduced area, and inductorless techniques are discussed. Cowritten by international experts in industry and academia, this book addresses the state of the art in integrated circuit design in the context of emerging systems. Design of Low-Noise Amplifiers for Ultra-Wideband Communications covers: Ultra-wideband overview and system approach Distributed amplifiers Wideband low-noise amplifiers Feedback wideband low-noise amplifiers Inductorless techniques

Download or read book Microwave and Wireless Synthesizers written by Ulrich L. Rohde and published by John Wiley & Sons. This book was released on 2021-04-27 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the leading resource on designing digital frequency synthesizers from microwave and wireless applications, fully updated to reflect the most modern integrated circuits and semiconductors Microwave and Wireless Synthesizers: Theory and Design, Second Edition, remains the standard text on the subject by providing complete and up-to-date coverage of both practical and theoretical aspects of modern frequency synthesizers and their components. Featuring contributions from leading experts in the field, this classic volume describes loop fundamentals, noise and spurious responses, special loops, loop components, multiloop synthesizers, and more. Practical synthesizer examples illustrate the design of a high-performance hybrid synthesizer and performance measurement techniques—offering readers clear instruction on the various design steps and design rules. The second edition includes extensively revised content throughout, including a modern approach to dealing with the noise and spurious response of loops and updated material on digital signal processing and architectures. Reflecting today's technology, new practical and validated examples cover a combination of analog and digital synthesizers and hybrid systems. Enhanced and expanded chapters discuss implementations of direct digital synthesis (DDS) architectures, the voltage-controlled oscillator (VCO), crystal and other high-Q based oscillators, arbitrary waveform generation, vector signal generation, and other current tools and techniques. Now requiring no additional literature to be useful, this comprehensive, one-stop resource: Provides a fully reviewed, updated, and enhanced presentation of microwave and wireless synthesizers Presents a clear mathematical method for designing oscillators for best noise performance at both RF and microwave frequencies Contains new illustrations, figures, diagrams, and examples Includes extensive appendices to aid in calculating phase noise in free-running oscillators, designing VHF and UHF oscillators with CAD software, using state-of-the-art synthesizer chips, and generating millimeter wave frequencies using the delay line principle Containing numerous designs of proven circuits and more than 500 relevant citations from scientific journal and papers, Microwave and Wireless Synthesizers: Theory and Design, Second Edition, is a must-have reference for engineers working in the field of radio communication, and the perfect textbook for advanced electrical engineering students.

Download or read book The Blackburn Family Newsletter written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applications of Semiconductor Optical Amplifiers written by Kyriakos E. Zoiros and published by MDPI. This book was released on 2018-10-11 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Applications of Semiconductor Optical Amplifiers" that was published in Applied Sciences

Download or read book mm Wave Silicon Technology written by Ali M. Niknejad and published by Springer Science & Business Media. This book was released on 2008-01-03 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.

Download or read book Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers written by Eric Kerhervé and published by Elsevier. This book was released on 2015-01-07 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniques The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement Layout considerations Examples of schematic, layout, simulation and measurement results Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency Written and edited by the top contributors to the field

Download or read book Low noise amplifiers in SiGe hetero junction bipolar process using reduced pressure chemical vapor deposition written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, an economic SiGe HBT (hetero- junction bipolar transistor)process using reduced pressure chemical vapor deposition (RPCVD)process of high throughput and the cheap localized oxidation of silicon (LOCOS)instead of shallow trench, was developed and characterized. To test its feasibility, several low noise amplifiers were designed and fabricated. As well as high cutoff frequency and low noise SiGe HBT devices, the passive elements including planar spiral inductors with only two metal layers, metal-insulator-metal capacitor, three kinds of resistors, and varactor diode were also integrated in the process. With carefully designing of the base profile and adopting finger-type structure, the measured minimum noise figure of 1.5 dB and associated gain of 16 dB at 1.8 GHz consuming the collector current of 4.6 mA at the supply voltage of 2.5V, were obtained in the low noise device. After on-wafer calibration, one of the fabricated low noise amplifiers was measured as 2.5 dB NF and 21 dB insertion gain at the frequency of 1.8 GHz with the supply voltage of 2.5 V. Those results using the epitaxial growth by RPCVD are firstly reported, and show its possibility to RF arena.

Download or read book Design of Silicon Power Ampliers and Arrays for Millimeter Wave Applications written by Bassel Hanafi and published by . This book was released on 2014 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: With emerging millimeter wave applications including automotive radars, wireless transmission of high-definition content, and possibly 5G mobile communications, low cost and high performance power amplifiers are key for enabling a commercial mass market. Silicon technologies offer cost advantages but typically suffer from low breakdown voltage and low Q passive elements yielding low power density and low efficiency. This thesis presents millimeter wave power amplifiers implemented in main stream silicon technologies. The task of obtaining large output power from low breakdown silicon devices is addressed by the use of stacking and power combining techniques. The design of a Q-band amplifier implemented in IBM 0.13um SiGe HBT process featuring on-chip corporate combining is first described. Stacking of bipolar transistors is introduced, together with novel low impedance biasing circuits to enable high breakdown voltage while extending the output swings. The fabricated amplifier delivered 24.7 dBm of maximum output power at 39 GHz, and 6.5% efficiency at 5.2 V without degradation. Alternatively, free-space combining can eliminate lossy on-chip combiners allowing for higher power and efficiency. A chip of 8 unit amplifiers implemented in 45nm CMOS SOI feeding a 2x2 array of differentially-fed patch antennas is demonstrated. With this chip, using CMOS stacking techniques, high output power (28 dBm) was achieved from a 3-stage amplifier operating at 45 GHz. When coupled to the antennas, the array provided an equivalent isotropic radiated power (EIRP) of 40 dBm (10 W), and a larger system comprising 4 chips feeding a 2x8 array was shown to deliver an EIRP of 50 dBm (100 W) at 45 GHz, while demonstrating, for the first time, a total RF power of 33 dBm which is a record in silicon at this frequency. The estimated peak PAE for both arrays are 13.5% and 10.7%, respectively. Finally, power amplifiers implemented in SOI technology can suffer from severe self-heating. The thermal behavior of CMOS SOI PAs is evaluated using 3D thermal simulations, and the effects of the back-end interconnect as well as the layout on the overall thermal resistance are discussed. The models were verified against measurements for an individual FET using the output conductance method. For a stacked-FET PA fabricated in 45nm CMOS SOI, the models reveal an excessive temperature rise of 150C for the FETs at maximum power, hence simple ideas were proposed to improve the thermal resistance of SOI circuits, with limited impact on electrical performance.

Download or read book SiGe Si Monolithically Integrated Amplifier Circuits written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-10 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated. Katehi, Linda P. B. and Bhattacharya, Pallab Glenn Research Center...

Download or read book Design and Simulation of SiGe HBT for Power Applications at 10 GHz written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The operation frequency of the communication systems like cell phones and LANs vary from 900MHz to 5.5GHz. For satellite communications the operating frequency is about 10 GHz. While a Si BJT works well for frequencies less than 2GHz, for high frequencies, III-V based transistors are used. Apart from being more expensive than the Si based technology, the III-V2s cannot be integrated into Si based CMOS technology. Hence it is necessary to develop a power amplifier that can work at higher frequency that can be integrated into Si technology. SiGe HBTs are cost effective and can be integrated into Si technology, thus making system on chip a reality. This work examines the epilayer design, geometrical layout and self-heating effects of a SiGe HBT in an effort to improve its high frequency performance.

Download or read book Compact SiGe HBT Low Noise Amplifiers for 3 1 10 6 GHz Ultra wideband Applications written by Jochen Dederer and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of Baluns and Low Noise Amplifiers in Integrated Mixed signal Organic Substrates written by Vinu Govind and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The integration of mixed-signal systems has long been a problem in the semiconductor industry. CMOS System-on-Chip (SOC), the traditional means for integration, fails mixed-signal systems on two fronts ; the lack of on-chip passives with high quality (Q) factors inhibits the design of completely integrated wireless circuits, and the noise coupling from digital to analog circuitry through the conductive silicon substrate degrades the performance of the analog circuits. Advancements in semiconductor packaging have resulted in a second option for integration, the System-On-Package (SOP) approach. Unlike SOC where the package exists just for the thermal and mechanical protection of the ICs, SOP provides for an increase in the functionality of the IC package by supporting multiple chips and embedded passives. However, integration at the package level also comes with its set of hurdles, with significant research required in areas like design of circuits using embedded passives and isolation of noise between analog and digital sub-systems. A novel multiband balun topology has been developed, providing concurrent operation at multiple frequency bands. The design of compact wideband baluns has been proposed as an extension of this theory. As proof-of-concept devices, both singleband and wideband baluns have been fabricated on Liquid Crystalline Polymer (LCP) based organic substrates. A novel passive-Q based optimization methodology has been developed for chip-package co-design of CMOS Low Noise Amplifiers (LNA). To implement these LNAs in a mixed-signal environment, a novel Electromagnetic Band Gap (EBG) based isolation scheme has also been employed. The key contributions of this work are thus the development of novel RF circuit topologies utilizing embedded passives, and an advancement in the understanding and suppression of signal coupling mechanisms in mixed-signal SOP-based systems. The former will result in compact and highly integrated solutions for RF front-ends, while the latter is expected to have a significant impact in the integration of these communication devices with high performance computing.

Download or read book High Power Millimeter Wave Signal Generation in Advanced SiGe and CMOS Process written by Hsin-Chang Lin and published by . This book was released on 2015 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis first presents a fully-integrated 16-way power combining amplifier for 67-92 GHz applications in an advanced 90 nm silicon germanium (SiGe) HBT technology. The 16-way amplifier is implemented using 3-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive l/4 impedance transformation networks are used for power combining. The 3-stage single PA breakout has a small-signal gain of 22 dB at 74 GHz, and saturation output power (Psat ) of 14.3-16.4 dBm at 68-99 GHz. The power-combining PA achieves a small-signal gain of 19.3 dB at 74 GHz, and Psat of 25.3-27.3 dBm at 68-88 GHz with a maximum power added efficiency (PAE) of 12.4%. The 16-way amplifier occupies 6.48 mm2 (including pads) and consumes a maximum current of 2.1 A from a 1.8 V supply. To our knowledge, this is the highest power silicon-based E-band amplifier to-date. Next, a fully-integrated 8-way power combining amplifier for 110-134 GHz applications in an advanced 90 nm silicon germanium (SiGe) HBT technology is presented. The 8-way amplifier is implemented using 4-stage common-emitter single-ended power amplifiers (PAs) as building blocks, and reactive l/4 impedance transformation networks are used for power combining. The single-ended PA breakout has a small-signal gain of 20 dB at 116 GHz, and saturation output power (Psat ) of 12.5-13.8 dBm at 114-130 GHz. The 8-way power combining PA achieves a small-signal gain of 15 dB at 116 GHz, and Psat of 20-20.8 dBm at 114-126 GHz with a power added efficiency (PAE) of 7.6-6.3%. The 8-way amplifier occupies 4.95 mm2 (including pads) and consumes a maximum current of 980 mA from a 1.6 V supply. To our knowledge, this is the highest power silicon-based D-band amplifier to-date. Next, a fully-integrated 4-way power combining multiplier for 200-230 GHz applications in an advanced 90 nm silicon germanium (SiGe) HBT technology is presented. The 4-way combined multiplier is implemented using active balanced transistor pairs with device size of 460.1 [mu]m2 with 4-stage pseudo-differential driver power amplifiers (PAs) as building blocks, and reactive l/4 impedance transformation networks are used for power combining. The 4-stage single-ended PA breakout has a peak small-signal gain of 19.3 dB at 110 GHz, and a saturation output power (Psat ) of 14.5 dBm at 116 GHz. The multiplier breakout results in a peak output power of 1.8 dBm at 245 GHz with a peak conversion gain of -15.5 dB. The power-combining multiplier achieves a peak output power of 8 dBm at 215 GHz with an associate conversion gain of -4.7 dB and the peak conversion gain is 1.6 dB at 215 GHz. The 4-way combined multiplier occupies 3.63 mm2 (including pads) and consumes a maximum current of 1.2 A from a 1.8 V supply. To our knowledge, this work generates the highest power among the silicon-based technology to-date at frequency above 200 GHz. Finally, high-power stand-alone millimeter-wave frequency multipliers in advanced SiGe and CMOS process are presented. First, a 135-160 GHz active doubler has been developed in 45 nm CMOS SOI. Careful optimization is done on the transistor size, layout and transmission-lines in order to result in the best performance. The doubler shows a measured peak power of +3.5 dBm at 150 GHz and > 2 dBm at 140-160 GHz, at a bias voltage of 1 V. These were achieved at an input power of 7-8 dBm at 70-80 GHz, resulting in a conversion gain of -4 to -5 dBm. To our knowledge, these are the best results achieved for a D-band doubler in SiGe or CMOS, and shows that advanced CMOS technology can be used to generate wideband power above 100 GHz. Second, a wideband 90 nm SiGe BiCMOS frequency multiplier at 200-245 GHz is presented. The balanced multiplier results in a low first harmonic component, and uses a reflector at the base nodes to reflect the second harmonics to transistors for improved efficiency. The measured output power is > -2 dBm at 200-245 GHz with a peak value of +2 dBm at 224-228 GHz and a conversion gain of -15 dB. To the author's knowledge, this is the highest power wideband doubler at 200-250 GHz.