Download or read book Deposition of Epitaxial Si Si Ge Ge and Novel High K Gate Dielectrics Using Remote Plasma Chemical Vapor Deposition written by Xiao Chen and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition of gate quality dielectrics for Si Si Ge heterostructure devices using remote plasma chemical vapor deposition written by Rajan Sharma and published by . This book was released on 1999 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Download or read book Physics and Technology of High k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Download or read book Characterization and reduction of defects in epitaxial Si and Si subscript 1 x Ge subscript x Si films grown by remote plasma enhanced chemical vapor deposition written by David Stephen Kinosky and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystallographic and electrical characterization of epitaxial GE subscript x Si subscript 1 x Si and in situ doped films grown by remote plasma chemical vapor deposition written by Rong-Zhen Qian and published by . This book was released on 1993 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.

Download or read book Low Temperature Ge on Si Epitaxy by High Density Plasma Chemical Vapor Deposition written by and published by . This book was released on 2014 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Based Dielectrics written by Aditi Banerjee and published by . This book was released on 1996 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapor Deposition of Epitaxial Silicon germanium carbon Alloys Using Cyclopropane as a Carbon Source Gas written by James R. Dekker and published by . This book was released on 1998 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Technology of High k Gate Dielectrics I written by Samares Kar and published by . This book was released on 2003 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In situ B doped Si epitaxial films grown by remote plasma enhanced chemical vapor deposition written by Joel Thornton Irby and published by . This book was released on 1992 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.

Download or read book Deposition of Silicon Based Dielectrics by Remote Plasma Enhanced Chemical Vapor Deposition written by David Vincent Tsu and published by . This book was released on 1989 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low temperature in situ clean and Si and Si subscript 1 x and Ge subscript x epitaxy by remote plasma enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1992 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices