Download or read book Defects in Semiconductors ICDS 19 written by Gordon Davies and published by . This book was released on 1997 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.

Download or read book Defects in Semiconductors ICDS 19 written by and published by . This book was released on 1997 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors written by Gordon Davies and published by Scitec Publications. This book was released on 1997 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.

Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference

Download or read book Transition Metal Defects in Silicon written by Michael Steger and published by Springer Science & Business Media. This book was released on 2013-02-26 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties.

Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Download or read book Defects in Semiconductors Icds 18 written by M. Suezawa and published by Trans Tech Publications. This book was released on 1996 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Download or read book Microprobe Characterization of Optoelectronic Materials written by Juan Jimenez and published by CRC Press. This book was released on 2024-11-01 with total page 731 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.

Download or read book Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1999 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-05-06 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

Download or read book Crucial Issues in Semiconductor Materials and Processing Technologies written by S. Coffa and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Download or read book Semiconductors written by and published by . This book was released on 2001 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Fifth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1998 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Modeling and Theory in Chemical Engineering written by James Wei and published by Elsevier. This book was released on 2001-12-18 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years chemical engineers have become increasingly involved in the design and synthesis of new materials and products as well as the development of biological processes and biomaterials. Such applications often demand that product properties be controlled with precision. Molecular modeling, simulating chemical and molecular structures or processes by computer, aids scientists in this endeavor. Volume 28 of Advances in Chemical Engineering presents discussions of theoretical and computational methods as well as their applications to specific technologies.

Download or read book Defects in Semiconductors 17 written by Helmut Heinrich and published by Trans Tech Publications. This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials, including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.