Download or read book Defects in Optoelectronic Materials written by Kazumi Wada and published by CRC Press. This book was released on 2022-09-16 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Download or read book Defects in Emerging III V Materials for Electronic and Optoelectronic Applications written by Wenjie Chen and published by . This book was released on 2013 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects and Materials Issues in Semiconductors Relationship to Optoelectronic Properties and Device Reliability written by Robert Herrick and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects and Materials Issues in Semiconductors written by R. Herrick and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding Defects in Germanium and Silicon for Optoelectronic Energy Conversion written by Neil Sunil Patel and published by . This book was released on 2016 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis explores bulk and interface defects in germanium (Ge) and silicon (Si) with a focus on understanding the impact defect related bandgap states will have on optoelectronic applications. Optoelectronic devices are minority carrier devices and are particularly sensitive to defect states which can drastically reduce carrier lifetimes in small concentrations. We performed a study of defect states in Sb-doped germanium by generation of defects via irradiation followed by subsequent characterization of electronic properties via deep-level transient spectroscopy (DLTS). Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E37, E30, E22, and E21) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 x 1011 cm-3 Mrad-1 for the uncorrelated vacancy-interstitial pair introduction rate. E37 decays by dissociation and vacancy diffusion to a sink present in a concentration of 1012 cm-3. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E22, E21, and E30 indicate that E22 likely contains two interstitials. The formation behavior of E22 after irradiation in liquid nitrogen indicates that E30 is required for formation of E22. Eight defect states previously unseen after gamma irradiation were observed and characterized after irradiation by alpha and neutron sources. Their absence after gamma irradiation indicates that defect formation requires collision cascades. We demonstrate electrically pumped lasing from Ge epitaxially grown on Si. Lasing is observed over a ~200nm bandwidth showing that this system holds promise for low-cost on-chip communications applications via silicon microphotonics. The observed large threshold currents are determined to be largely a result of recombination due to threading dislocations. We estimate that recombination by threading dislocations becomes negligible when threading dislocation density is
Download or read book Defects in Nanocrystals written by Sergio Pizzini and published by CRC Press. This book was released on 2020-05-11 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.
Download or read book Defects In Functional Materials written by Chi-chung Francis Ling and published by World Scientific. This book was released on 2020-08-21 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research of functional materials has attracted extensive attention in recent years, and its advancement nitrifies the developments of modern sciences and technologies like green sciences and energy, aerospace, medical and health, telecommunications, and information technology. The present book aims to summarize the research activities carried out in recent years devoting to the understanding of the physics and chemistry of how the defects play a role in the electrical, optical and magnetic properties and the applications of the different functional materials in the fields of magnetism, optoelectronic, and photovoltaic etc.
Download or read book Direct Observations of Defect Structures in Optoelectronic Materials by Z Contrast STEM written by and published by . This book was released on 1998 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic semiconductor materials have wide and important technological applications. For example, wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers, while HgCdTe II-VI semiconductors are the most promising candidates for applications as infrared detectors, or large array x-ray or r-ray detectors. In this paper, two examples are given to show that high-resolution Z-contrast imaging is an effective technique to determine the atomic structures of defects in these complex semiconductor materials.
Download or read book Defects in Two Dimensional Materials written by Rafik Addou and published by Elsevier. This book was released on 2022-02-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
Download or read book Reliability of Semiconductor Lasers and Optoelectronic Devices written by Robert Herrick and published by Woodhead Publishing. This book was released on 2021-03-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.
Download or read book Optoelectronic Devices and Properties written by Oleg Sergiyenko and published by BoD – Books on Demand. This book was released on 2011-04-19 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, spatial scanning, optical monitoring, 3D measurements and medical instruments. This is the most complete book about optoelectromechanic systems and semiconductor optoelectronic devices; it provides an accessible, well-organized overview of optoelectronic devices and properties that emphasizes basic principles.
Download or read book Insulating Materials For Optoelectronics New Developments written by Fernando Agullo-lopez and published by World Scientific. This book was released on 1995-11-07 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents new developments in the preparation, physical characterization and applications of insulating materials for Optoelectronics. Insulators occupy a leading position as laser and optical amplifier hosts, electrooptic and acoustooptic modulators, frequency doublers and optical parametric oscillators, photorefractive devices and radiator detectors. These applications rely heavily on the development of advanced techniques for the preparation of both bulk and waveguide structures, the adequate knowledge of the microscopic behaviour defects, impurities and a thorough understanding of their response to electromagnetic fields. All these topics relating basic physicochemical aspects and applied performance are authoritatively discussed in the book.
Download or read book Advances in Optoelectronic Materials written by Shadia Jamil Ikhmayies and published by Springer Nature. This book was released on 2021 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, GaP, ZnSe, and NaAlSi. The structural, optical, vibrational, and magnetic properties are discussed, in addition to transport and phase transformations.
Download or read book Bulk Crystal Growth of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2005-10-31 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa
Download or read book Materials for Optoelectronic Devices OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.