Download or read book Defect States in Plasma deposited A Si written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Three preprints are presented. The first, entitled ''Glow Discharge Optical Spectroscopy Measurement of Dopant Concentrations in a-Si:H, '' reports significant differences between the ratio of boron to silicon of the films and that of their deposition plasmas. The second, entitled ''Growth Morphology and Defects in Plasma-Deposited a-Si:H Films, '' presents structural studies that show that a major class of defect is an anisotropic density fluctuation. Studies of the hydrogen environment suggest that an inhomogeneous hydrogen distribution is associated with these fluctuations. From considerations of the deposition chemistry and nucleation theory, a model is proposed to describe the film growth process and its relationship to defects. The third, entitled ''Luminescence and ESR Studies of Defects in Hydrogenated Amorphous Silicon, '' demonstrates that the two experiments involve identical recombination transitions, and identify two separate processes. One process involves defect states, and from the doping dependence of light induced ESR, it is deduced that the electronically active defects are dangling bonds with positive electronic correlation energy. (LEW).
Download or read book Defect States in Plasma deposited A Si written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Studies of defects in plasma-deposited, hydrogenated amorphous silicon (a-Si:H), covering the period February 1979-January 1980 are described. Substantial progress has been made in understanding defect structures, their electronic properties and the influence of doping. The two most significant results are surprising, in one case for simplicity where complexity was expected, and in the other for complexity where simplicity had been presumed. In the first study we have clarified the nature of the defects by showing the connection between luminescence and light induced ESR experiments. The results indicate that dangling bonds having a positive electronic correlation energy are sufficient to explain most of the experimental information. The second study demonstrates the existence of microstructural inhomogeneities, arising from the nucleation and growth of the films. Thus the usual assumption of a uniform alloy with a random distribution of defects must be modified in considering processes such as electrical conduction, trapping, recombination, hydrogen effusion, etc. Of considerable technological and fundamental interest is the influence of doping on the defect behavior. Previous indications that doping introduces defect states have been confirmed. It remains to determine why this behavior occurs, and if there are any means of circumventing the problem.
Download or read book Defect States in Plasma deposited A Si written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Raman and ESR measurements were used to study the atomic bonding and defect concentrations. Features are identified in the Raman spectra which can be attributed to configurations containing Si-Si, Si-As and As-As bonds. Features due to all three of these configurations were found to simultaneously exist, thus excluding a chemically ordered model of the bonding. However, the composition dependences of the features do not follow exactly a random bonding model either. The H bonding configurations were reflected in features at approx. 2000 cm−1 in the Raman spectra. It was found that the H bonding changed dramatically in the As doping to 5% As alloying region. The ESR measurements indicated a low level of singly occupied defect states in all the samples studied.
Download or read book Solar Energy Update written by and published by . This book was released on 1981-10 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1995 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Plasma Deposited Thin Films written by Mort and published by CRC Press. This book was released on 2018-05-04 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Summary, the objective of this book is to present in one volume a review of the plasma deposition process and the present understanding of the most important and widely used plasma deposited thin film materials, devices and their applications.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tetrahedrally Bonded Amorphous Semiconductors written by David A. Adler and published by Springer. This book was released on 2013-12-19 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photovoltaics Advanced R D Annual Review Meeting written by and published by . This book was released on 1979 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Light Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Download or read book SERI Photovoltaic Advanced Research and Development Bibliography 1982 1985 written by and published by . This book was released on 1986 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hydrogen in Semiconductors written by M. Stutzmann and published by Elsevier. This book was released on 2012-12-02 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Download or read book Plasma Diagnostics written by Orlando Auciello and published by Academic Press. This book was released on 2013-10-22 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasmas and their interaction with materials have become subjects of major interest because of their importance in modern forefront technologies such as microelectronics, fusion energy, and space. Plasmas are used in microelectronics to process semiconductors (etching of patterns for microcircuits, plasma-induced deposition of thin films, etc.); plasmas produce deleterious erosion effects on surfaces of materials used for fusion devices and spaceships exposed to the low earth environment.Diagnostics of plasmas and materials exposed to them are fundamental to the understanding of the physical and chemical phenomena involved. Plasma Diagnostics provides a comprehensive treatment of the subject.short version, TJE_Plasmas and their interaction with materials have become subjects of major interest because of their importance in modern forefront technologies such as microelectronics, fusion energy, and space. Diagnostics of plasmas and materials exposed to them are fundamental to the understanding of the physical and chemical phenomena involved. Plasma Diagnostics provides a comprehensive treatment of the subject.
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Download or read book Technology Manufacturing and Grid Connection of Photovoltaic Solar Cells written by Guangyu Wang and published by John Wiley & Sons. This book was released on 2018-02-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique guide to the most important technical aspects of photovoltaic power generation with comprehensive analysis and author industry-experience Unique from other books in the area in that it explains profound theories in simple language, introduces widely used production equipment and processes for industry professionals, and explains the complete PV industry chain from material to power generation Has originated from the author’s practical industry experience, enabling the use of up-to-date information during this time of new development in the Chinese PV industry Content includes approximately 255 illustrations and 46 tables to help clarify complex theories.
