Download or read book Defect Control and Denuded Trap Zones in the III V Semiconductors written by and published by . This book was released on 1989 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of a variety of different treatments on the diffusion lengths in GaAs wafers were investigated. Sealed ampule proximity-capped anneals of 16 hours at 950 C were found to increase minority carrier (hole) diffusion lengths in 1 x 10 to the 17th power Si doped GaAs from initial values of about 0.8 microns to 1.9 microns. This improvement appears to be associated with the reduction in density of a hole trap at E sub v + 0.3 eV which has a capture cross-section in the 10 to the minus 14th to 10 to the minus 15th sq cm range. The proximity anneal also greatly reduced the densities of electron traps, including EL2, but there was no direct correlation of electron trap density and improved carrier lifetime. In other studies the effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n- GaAs (100) grown by molecular beam epitaxy (MBE) were investigated. The addition of 0.2 to 1% indium causes large reductions of electron trap densities in layers grown at 550 C and also reduces certain hole traps. Homojunction GaAs bipolar transistors npn and pnp have been fabricated with base layers containing In isoelectronic doping and are found to have significantly better characteristics than if the In is omitted. Keywords: Gallium arsenide; Diffusion lengths; Carrier lifetime; MBE; Isoelectronic doping; Indium; Charge carriers; Electron capture; Antimony; Beryllium.
Download or read book Research in Progress written by and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1989-12 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1991 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Control in Semiconductors written by Kōji Sumino and published by . This book was released on 1990 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc. The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Download or read book Government Reports Annual Index written by and published by . This book was released on 1991 with total page 1764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer. This book was released on 2010-10-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Download or read book The Conference Record of the Nineteenth IEEE Photovoltaic Specialists Conference 1987 written by and published by . This book was released on 1987 with total page 1626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 1990 with total page 2598 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Download or read book Crystal Growth written by A.W. Vere and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the second in a series of scientific textbooks designed to cover advances in selected research fields from a basic and general viewpoint, so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semiconductor Materials has been the subject of numerous books and reviews and the fundamental principles are now well-established. We are concerned chiefly with the deposition of atoms onto a suitable surface - crystal growth - and the generation of faults in the atomic structure during growth and subsequent cooling to room temperature - crystal defect structure. In this book I have attempted to show that whilst the fundamentals of these processes are relatively simple, the complexities of the interactions involved and the individuality of different materials systems and growth processes have ensured that experimentally verifiable predictions from scientific principles have met with only limited success - good crystal growth remains an art. However, recent advances, which include the reduction of growth temperatures, the reduction or elimination of reactant transport variables and the use of better-controlled energy sources to promote specific reactions, are leading to simplified growth systems.
