Download or read book Defect and Impurity Engineered Semiconductors and Devices III Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 2002 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Crystalline Defects and Contamination written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2001 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Theory of Defects in Semiconductors written by David A. Drabold and published by Springer Science & Business Media. This book was released on 2007 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Download or read book Proceedings of the Symposium on Crystalline Defects and Contamination Their Impact and Control in Device Manufacturing II written by Bernd O. Kolbesen (Chemiker.) and published by . This book was released on 1997 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book Analytical and Diagnostic Techniques for Semiconductor Materials Devices and Processes written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2003 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: .".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Radiation Defect Engineering written by Abrosimova Vera and published by World Scientific. This book was released on 2005-11-17 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Download or read book Radiation Defect Engineering written by Vitali? Vasil?evich Kozlovski? and published by World Scientific. This book was released on 2005 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Download or read book High Purity Silicon VI written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2000 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: "... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Download or read book Gettering and Defect Engineering in Semiconductor Technology written by H. Richter and published by . This book was released on 2004 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ENGINEERING PHYSICS THIRD EDITION written by RAJAGOPAL, K. and published by PHI Learning Pvt. Ltd.. This book was released on 2015-08-31 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is written specifically to address the course curriculum in Engineering Physics for the first-year students of all branches of engineering. Though most of the topics covered are customarily taught in several universities and institutes, the book follows the sequence of topics as prescribed in the course syllabus of engineering colleges in Tamil Nadu. This new edition of the book continues to present the fundamental concepts of physics in a pedagogically sound manner. It includes a new chapter on Thermal Physics, which is essential for core engineering students. Furthermore, topics like crystal growth techniques, estimation of packing density of diamond and the relation between three moduli of elasticity are included at the appropriate places, to improve the understanding of the subject matter. KEY FEATURES • Several numerical problems (solved and unsolved) to strengthen the problem-solving ability of students • Short and Long questions at the end of each chapter • Model Test Papers with solutions • Summary at the end of each chapter to recapitulate the most important results of the chapter
