Download or read book Computer models of the field effect transistor written by Ben David Roberts and published by . This book was released on 1967 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computer Models of the Field effect Transistor written by Ben David Roberts (Jr.) and published by . This book was released on 1967 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Network analysis programs may be used to analyze complex electronic circuits. This requires that models for the active devices in these circuits be developed. A nonlinear model of the field-effect transistor is presented for use in large-signal applications. From this model several piecewise-linear models suitable for use with Electronic Circuit Analysis Program (ECAP) are derived. The approximations required in these models are evaluated, and models intended for use in pulse inverters and choppers are presented. Techniques for measuring the parameters in the models are described and results of the measurement of these parameters for a sample of field-effect transistors are given. Finally, the behavior of a sample of these devices in pulse inverter and chopper circuits is compared to the behavior of the device models in computer simulation of the circuits. (Author).

Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Download or read book Nonlinear Computer Models of Field Effect Transistors written by and published by . This book was released on 1970 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Whenever active devices are included in an electronic circuit that is to be analyzed by a computer, appropriate models for these devices must be developed. A lumped large-signal dynamic model of the field-effect transistor (FET) is presented and the procedure for pointwise linearization of this model is described. This linearized model is suitable for use with the TRAC (Transient Radiation Analysis by Computer program) network analysis program. Implementation of this model using TRAC coding was demonstrated by programming an example circuit for each of two basic types of field-effect transistor. The performance of the model in simulating a basic pulse invertor circuit was compared with actual device behavior. Suggestions for extension of this work are included. (Author).

Download or read book Non Linear Computer Models of Field Effect Transistors written by Arthur David Rathjen and published by . This book was released on 1970 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: Whenever active devices are included in an electronic circuit that is to be analyzed by a computer, appropriate models for these devices must be developed. A lumped large-signal dynamic model of the field-effect transistor (FET) is presented and the procedure for pointwise linearization of this model is described. This linearized model is suitable for use with the TRAC (Transient Radiation Analysis by Computer program) network analysis program. Implementation of this model using TRAC coding was demonstrated by programming an example circuit for each of two basic types of field-effect transistor. The performance of the model in simulating a basic pulse invertor circuit was compared with actual device behavior. Suggestions for extension of this work are included. (Author).

Download or read book FET Modeling for Circuit Simulation written by Dileep A. Divekar and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc.

Download or read book Computer Model of Schottky gate Field Effect Transistors written by Mustafa Fituri Abusaid and published by . This book was released on 1979 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Unified Field Effect Transistor Modeling and Characterization for Computer aided Design written by Byung-Jong Moon and published by . This book was released on 1991 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Download or read book A Computer oriented Model for Insulated gate Field effect Transistors written by Mohammad Yasin Malik and published by . This book was released on 1971 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Four Terminal Junction Field effect Transistor Model for Computer aided Design written by Hao Ding and published by . This book was released on 2007 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: A compact model for four-terminal (independent top and bottom gates) junction field-effect transistor (JFET) is presented in this dissertation. The model describes the steady-state characteristics with a unified equation for all bias conditions that provides a high degree of accuracy and continuity of conductance, which are important for predictive analog circuit simulations. It also includes capacitance and leakage equations. A special capacitance drop-off phenomenon at the pinch-off region is studies and modeled. The operations of the junction field-effect transistor (JFET) with an oxide top-gate and full oxide isolation are analyzed, and a semi-physical compact model is developed. The effects of the different modes associated with the oxide top-gate on the JFET steady-state characteristics of the transistor are discussed, and a single expression applicable for the description of the JFET dc characteristics for all operation modes is derived. The model has been implemented in Verilog-A and simulated in Cadence framework for comparison to experimental data measured at Texas Instruments.

Download or read book Fet Modeling for Circuit Simulation written by Dileep A Divekar and published by . This book was released on 1988-03-31 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Download or read book U S Government Research Development Reports written by and published by . This book was released on 1970 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of Semiconductors written by Kevin F. Brennan and published by Cambridge University Press. This book was released on 1999-02-13 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practising engineers in optoelectronics and related areas.