Download or read book Comprehensive Nonlinear Modelling of Dispersive Heterostructure Field Effect Transistors and Their MMIC Applications written by Ingmar Kallfass and published by . This book was released on 2006 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications written by Ingmar Kallfass and published by Cuvillier Verlag. This book was released on 2006-06-28 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: A custom HFET model was developed and applied in the design of several MMIC applica- tions. The model is expressly dedicated to microwave circuit design. Its analytical nonlinear equations provide a compromise between physical interpretability, numerical efficiency and global validity. As an essential part of the overall model, the COBRA expression features a highly efficient and accurate description of complex HFET drain current characteristics. A modification was introduced to include the reduction of drain current due to the self-heating effect as well as for improved description of gain compression. A new approach to frequency dispersion modelling extends the model’s validity range from the microwave- down to the low-frequency and DC regimes. The proposed dispersion model relies on conventional device characterisation techniques and standard parameter ex- traction procedures. The inclusion of multiple dispersion time constants and exponentially decaying step responses accurately reflects the physical nature of individual dispersion ef- fects, providing a correct description of transitions between dispersion regimes both in the time- and frequency domain. As a consequence, the model allows for accurate assessment of dynamic (gain, matching, intermodulation etc.), static (e.g. biasing, power consumption) as well as combined (e.g. PAE, self-biasing) figures of merit during the design phase. Addition- ally, the simulation error introduced by neglecting frequency dispersion when using purely static or dynamic drain current models, can be evaluated. A unified capacitance model approach defines the frame for sets of charge-conservative expressions for gate capacitance characteristics. The final equations employed here resemble in composition the Curtice IV model, e.g. in terms of transition from linear- to saturated- and from sub-threshold- to active voltage regimes. The universal validity of the model was demonstrated by applying it to several different HEMT technologies, encompassing both state-of-the-art GaAs pHEMT low-noise and power processes, high-frequency InP pHEMTs as well as novel concepts such as the strained-Si/SiGe mHEMT. Both the nonlinear capacitance and dispersion models proved to apply very well to all HEMT technologies.
Download or read book High Speed Electronics and Optoelectronics written by Sheila Prasad and published by Cambridge University Press. This book was released on 2009-06-18 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: This authoritative account of electronic and optoelectronic devices covers the fundamental principles of operation, and, uniquely, their circuit applications too.
Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2021-04-27 with total page 1202 pages. Available in PDF, EPUB and Kindle. Book excerpt: Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material. The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like: An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book Deutsche Nationalbibliografie written by Die deutsche Nationalbibliothek and published by . This book was released on 2007 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Download or read book Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Bruce McRae Green and published by . This book was released on 2001 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Broadband Microwave Amplifiers written by Bal S. Virdee and published by Artech House. This book was released on 2004 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This authoritative resource offers a complete understanding of state-of-the-art and cutting-edge techniques for designing and fabricating broadband microwave amplifiers. The book covers the complete design cycle, detailing each stage in a practical, hands-on manner." "This comprehensive reference illustrates the formulation of small- and large-signal device models to help professionals accurately simulate amplifier performance, and covers all the practical aspects and circuit components used in fabrication. Engineers find design examples of various types of amplifiers that are applicable in broadband systems such as optical communications, satellite communications, spread-spectrum communications, wireless local area networks, electronic warfare, instrumentation, and phased array radar. The book also provides an in-depth treatment of ultra-broadband microwave amplifiers." --Book Jacket.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1994 with total page 1084 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Foundations for Microstrip Circuit Design written by Terry C. Edwards and published by John Wiley & Sons. This book was released on 2016-02-01 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Download or read book Compound Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1984 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:
