Download or read book Comparative Analysis of High Input Voltage and High Voltage Conversion Ratio Step down Converters Equipped with Silicon Carbide and Ultrafast Silicon Diodes written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: DC to DC step-down applications with high input voltage and high voltage conversion ratio operational requirements, such as photovoltaic battery chargers, are subject to high conduction losses, high switching losses and substantial reverse-recovery losses when minority carrier principle diodes are used. The recent introduction of silicon carbide diodes with high breakdown voltages has made possible the elimination of reverse-recovery losses at high voltage levels and as such has sparked interest in their use due to the potential efficiency improvements. This report presents the results of a comprehensive analysis on the use of silicon carbide diodes and their counterparts, ultrafast silicon diodes, in conventional buck converters and isolated current-fed buck converters in high input voltage and high voltage conversion ratio step-down applications. The analysis illustrates both theoretically, with the use of steady-state average models, and experimentally the substantial efficiency benefits of the use of reverse-recovery free silicon carbide diodes in the conventional buck converter and the small but significant improvement in the efficiency of the isolated current-fed buck converter. The improvements of the conventional buck converter paired with silicon carbide diodes are shown to be significant enough to grant the variant the most efficient position for power levels below 1 kW. In addition, the four variants are categorized based on their cost and performance; therefore, providing engineers with a convenient guide to aid their selection of the appropriate converter depending on the operational requirements.
Download or read book Enabling High Efficiency Medium Voltage Converter for High Speed Drives and Other Grid Applications Using Low Voltage LV and High Voltage HV Silicon Carbide SiC Devices written by Kasunaidu Vechalapu and published by . This book was released on 2018 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Short Circuit Requirements of Power Converters based upon Wide Bandgap Semiconductors written by Douglas Pappis and published by BoD – Books on Demand. This book was released on 2021-01-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Download or read book High Efficiency Silicon Carbide SiC Converters Delivery Order 0001 Development of High Temperature High Power High Efficiency High Voltage Converters Using Silicon Carbide written by and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: A design based on a self- aligned, gate-implanted, trenched source-gate junction FET was selected for its near term technological readiness and its long term manufacturability. This project concentrated on several key processes required for the realization of a viable VJFET fabrication technology, namely, 1) Development of silicon carbide dry (plasma) etches; 2) Development of appropriate edge termination technology; and 3) Development of implantation and annealing recipes core to the design. Semiconductor devices, principally the Schottky barrier diode and the PiN junction rectifier, were fabricated to test design assumptions and to evaluate new process steps. The principal accomplishments of the effort can be summarized as follows: 1) The completion of a design for a 600-V self-aligned, gate-implanted, trench VJFET, shown to deliver blocking voltages in excess of 800 V, an specific on resistance as low as 5 mohm-cm2; 2) The development of critical VJFET and rectifier device fabrication processes, and 3) The demonstration of a multi-wafer PiN diode lot of 1.5 kV PiN diodes.
Download or read book Development of High Temperature High Power High Efficiency High Voltage Converters Using Silicon Carbide SiC Delivery Order Delivery Order 0002 Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties written by and published by . This book was released on 2005 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.
Download or read book Investigation and Application of High efficiency Large step down Power Conversion Architectures written by Samantha Joellyn Gunter and published by . This book was released on 2016 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis, we introduce two large-step-down dc-dc converter architectures that are designed to provide zero-voltage switching of the power devices. While the techniques used in these converters can be used in a wide range of applications, the operating voltage and power levels used in this thesis are for data centers, where dc distribution power delivery is expected to see its first deployment. The nominal 380 V bus voltage will need to be converted to 12 V using a high-efficiency dc-dc converter that can deliver several hundred watts of power to each rack to power the servers. The converters are expected to operate efficiently across a wide input voltage range of 260 V to 410 V and down to powers in the tens of watts range. The first converter architecture is based on the concept of an Impedance Control Network (ICN) resonant converter. Using phase-shift control along with a specifically designed impedance network, this converter can maintain resistive loading of the inverters as the input voltage varies. To back down in power, the converter can be efficiently operated using burst (on/off) mode control. To deliver lower power, we introduce an additional control technique using Variable Frequency Multiplier (VFX) inverters and/or rectifiers. The second converter architecture combines the properties of an active bridge converter with multiple stacked inverters, a multi-winding single core transformer, and a reconfigurable rectifier. The stacked inverter topology improves the range of powers over which zero-voltage switching can be achieved. The multi-winding transformer and reconfigurable rectifier further extend the efficient operating range to very low powers by reducing core loss and increasing zero-voltage switching capability. Both proposed architectures are suitable for large-step-down, wide-input voltage, wide-output power applications such as dc-dc converters for dc distribution.
Download or read book Design Techniques for High frequency High efficiency High voltage Soft switched Power Converters written by Jing Xue (Electrical engineer) and published by . This book was released on 2016 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power management Integrated circuits (ICs) have been used for providing constant and reliable supply voltages for different electronic circuits from unregulated voltages. About 80% of today’s power management ICs are designed to handle a high-voltage (HV) input range above 6 V. The HV power ICs can reduce the bill-of-material (BOM) cost and improve system reliability without compromising the system performance. It is crucial to maximize the power density and power efficiency of HV power converters. Operating the converter at a higher switching frequency would result in smaller converter volume and lower BOM cost but the large switching loss in conventional hard-switching HV power converters would significantly decrease the power efficiency. This dissertation develops a non-isolated QSW-ZVS boost converter by minimizing the switching power loss to achieve high power efficiency under high-frequency and HV conditions. The proposed converter achieves 92.7% at 1 MHz while increasing the switching frequency by at least 15x in comparison with the state-of-the-art counterparts. An effective gate driver is important to provide fast propagation delays with low power dissipation in the MHz range and generate appropriate dead-time to assist the ZVS operation under different conditions. An on-chip synchronous gate driver with automatic dead-time controller for GaN-based HV three-level converters is proposed in this dissertation. The proposed gate driver achieves ≤ 15-ns delays with 50-V/ns noise immunity and enables a 100-V 35-W isolated three-level half-bridge converter to achieve the peak power efficiencies of 90.7% at 2 MHz. The three-level converter can also be used to reduce the value of passive components. To maximize the benefits of three-level converters, the voltage across the flying capacitor must be controlled to half of the input voltage under different conditions. This dissertation develops a 2-MHz 12-V – 100-V integrated ZVS three-level DC-DC regulator. The constant-frequency adaptive-on-time V2 control enables the flying-capacitor self-balancing at 2 MHz over a wide input range. The body-diode based floating ZVS detector enables full ZVS in high-frequency low-duty-ratio operation with ≤ 5-ns ZVS turn-on delay. The proposed regulator achieves 90% peak power efficiency with more than 66x reduction in inductance compared with the state-of-the-art wide-input-range voltage regulators.
Download or read book Advanced Topologies of High Step up DC DC Converters for Renewable Energy Applications written by Ramin Rahimi and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This research is focused on developing several advanced topologies of high step-up DC-DC converters to connect low-voltage renewable energy (RE) sources, such as photovoltaic (PV) panels and fuel cells (FCs), into a high-voltage DC bus in renewable energy applications. The proposed converters are based on the combinations of various voltage-boosting (VB) techniques, including interleaved and quadratic structures, switched-capacitor (SC)-based voltage multiplier (VM) cells, and magnetically coupled inductor (CI) and built-in-transformer (BIT). The proposed converters offer outstanding features, including high voltage gain with low or medium duty cycle, a small number of components, low current and voltage stresses on the components, continuous input current with low ripple, and high efficiency. This research includes five new advanced high step-up DC-DC converters with detailed analyses. First, an interleaved converter is presented, which is based on the integration of two three-winding CIs with SC-based VM cells. Second, a dual-switch converter is proposed, which is based on the integration of a single three-winding CI with SC-based VM cells. Third, the SC-based VM cells are utilized to present three new Z-source (ZS)-based converters. Fourth, two double-winding CIs and a three-winding BIT are combined with SC-based VM cells to develop another interleaved high step-up converter. Finally, two double-winding CIs and SC-based VM cells are adopted to devise an interleaved quadratic converter with high voltage gain. The operating and steady-state analyses, design considerations, and a comparison with similar converters in the literature are provided for each converter. In addition, hardware prototypes were fabricated to verify the performance of the proposed converters"--Abstract, page iv.
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Download or read book Sliding Mode Control in Electro Mechanical Systems written by Vadim Utkin and published by CRC Press. This book was released on 2017-12-19 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Apply Sliding Mode Theory to Solve Control Problems Interest in SMC has grown rapidly since the first edition of this book was published. This second edition includes new results that have been achieved in SMC throughout the past decade relating to both control design methodology and applications. In that time, Sliding Mode Control (SMC) has continued to gain increasing importance as a universal design tool for the robust control of linear and nonlinear electro-mechanical systems. Its strengths result from its simple, flexible, and highly cost-effective approach to design and implementation. Most importantly, SMC promotes inherent order reduction and allows for the direct incorporation of robustness against system uncertainties and disturbances. These qualities lead to dramatic improvements in stability and help enable the design of high-performance control systems at low cost. Written by three of the most respected experts in the field, including one of its originators, this updated edition of Sliding Mode Control in Electro-Mechanical Systems reflects developments in the field over the past decade. It builds on the solid fundamentals presented in the first edition to promote a deeper understanding of the conventional SMC methodology, and it examines new design principles in order to broaden the application potential of SMC. SMC is particularly useful for the design of electromechanical systems because of its discontinuous structure. In fact, where the hardware of many electromechanical systems (such as electric motors) prescribes discontinuous inputs, SMC becomes the natural choice for direct implementation. This book provides a unique combination of theory, implementation issues, and examples of real-life applications reflective of the authors’ own industry-leading work in the development of robotics, automobiles, and other technological breakthroughs.
Download or read book Power Electronics Semiconductor Switches written by E. Ramshaw and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Semiconductor Switches is the successor to Professor Ramshaw's widely-used Power Electronics. The text has been completely re-written and expanded to focus on semiconductor switches, and to take into account advances in the field since the publication of Power Electronics and changes in electrical and electronic engineering syllabuses.
Download or read book Fundamentals of Power Electronics written by Robert W. Erickson and published by Springer Nature. This book was released on 2020-07-14 with total page 1081 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Electronics, Third Edition, is an up-to-date and authoritative text and reference book on power electronics. This new edition retains the original objective and philosophy of focusing on the fundamental principles, models, and technical requirements needed for designing practical power electronic systems while adding a wealth of new material. Improved features of this new edition include: new material on switching loss mechanisms and their modeling; wide bandgap semiconductor devices; a more rigorous treatment of averaging; explanation of the Nyquist stability criterion; incorporation of the Tan and Middlebrook model for current programmed control; a new chapter on digital control of switching converters; major new chapters on advanced techniques of design-oriented analysis including feedback and extra-element theorems; average current control; new material on input filter design; new treatment of averaged switch modeling, simulation, and indirect power; and sampling effects in DCM, CPM, and digital control. Fundamentals of Power Electronics, Third Edition, is intended for use in introductory power electronics courses and related fields for both senior undergraduates and first-year graduate students interested in converter circuits and electronics, control systems, and magnetic and power systems. It will also be an invaluable reference for professionals working in power electronics, power conversion, and analog and digital electronics.
Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Download or read book Flexible Power Transmission written by Jos Arrillaga and published by John Wiley & Sons. This book was released on 2007-09-27 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of power semiconductors with greater ratings and improved characteristics has meant that the power industry has become more willing to develop new converter configurations. These new configurations take advantage of the higher controllability and switching frequencies of the new devices. The next few years will decide which of the proposed technologies will dominate future power transmission systems. Flexible Power Transmission is a comprehensive guide to the high voltage direct current (HVDC) options available, helping the reader to make informed decisions for designing future power transmission systems. The book includes: a full description of the principles and components in existing converter technology, as well as alternative proposals for self-commutating conversion; A review of the state of power semiconductors suited to HVDC transmission and present proposals for multi-level HVDC transmission. a detailed overview of the flexible HVDC methods for improving controllability and increasing power transfer capability in electrical power systems. up-to-date information on thyrisistor-based HVDC technology. coverage of new pulse width modulation (PWM) transmission technology and multi-level voltage source conversion (VSC) and current source conversion (CSC). An excellent reference for professional power engineers, Flexible Power Transmission is also a useful guide for power system researchers as well as lecturers and students in power systems and power electronics disciplines.
Download or read book High Power Converters and AC Drives written by Bin Wu and published by John Wiley & Sons. This book was released on 2007-01-29 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest cutting-edge technology in high-power converters and medium voltage drives, and provides a complete analysis of various converter topologies, modulation techniques, practical drive configurations, and advanced control schemes. Supplemented with more than 250 illustrations, the author illustrates key concepts with simulations and experiments. Practical problems, along with accompanying solutions, are presented to help you tackle real-world issues.
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Download or read book Advanced Power Electronics Converters written by Euzeli dos Santos and published by John Wiley & Sons. This book was released on 2014-11-10 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers power electronics, in depth, by presenting the basic principles and application details, which can be used both as a textbook and reference book. Introduces a new method to present power electronics converters called Power Blocks Geometry (PBG) Applicable for courses focusing on power electronics, power electronics converters, and advanced power converters Offers a comprehensive set of simulation results to help understand the circuits presented throughout the book
