Download or read book Chemical Vapor Deposition of Silicon Carbide in a Hot Wall Reactor written by Feng Gao and published by . This book was released on 1993 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition of Silicon Carbide on Graphite and Titanium Using a Combined Hot Wall and Heated Substrate Reactor written by Robert M. Galasso and published by . This book was released on 1994 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor written by Matthew T. Smith and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented.
Download or read book Hydrogen Chloride Enhanced Growth of Silicon Carbide by Chemical Vapor Deposition in a Vertical Cold Wall Reactor written by Christopher Ian Thomas and published by . This book was released on 2009 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CVD growth of SiC for high power and high frequency applications written by Robin Karhu and published by Linköping University Electronic Press. This book was released on 2019-02-14 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.
Download or read book Growth of 3C SiC Via a Hot wall CVD Reactor written by Suzie Harvey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on silicon (Si) substrates at high growth rates, via a horizontal hot-wall chemical vapor deposition (CVD) reactor, has been achieved. The final growth process was developed in three stages; an initial "baseline" development stage, an optimization stage, and a large area growth stage. In all cases the growth was conducted using a two step, carbonization plus growth, process. During carbonization, the surface of the Si is converted to 3C-SiC, which helps to minimize the stress in the growing crystal. Propane (C3H8) and silane (SiH4), diluted in hydrogen (H2), were used as the carbon and silicon source, respectively. A deposition rate of approximately 10 um/h was established during the baseline process. Once the baseline process proved to be repeatable, optimization of the process began. Through variations in temperature, pressure, and the Si/C ratio, thick 3C-SiC films (up to 22 um thick) and high deposition rates (up to 30 um/h) were obtained. The optimized process was then applied to growth on 50 mm diameter Si(100) wafers. The grown 3C-SiC films were analyzed using a variety of characterization techniques. The thickness of the films was assessed through Fourier Transform infrared (FTIR) spectroscopy, and confirmed by cross-section scanning electron microscopy (SEM). The SEM cross-sections were also used to investigate the 3C-SiC/Si interface. The surface morphology of the films was inspected via Nomarsky interference optical microscopy, atomic force microscopy (AFM), and SEM. The crystalline quality of the films was determined through X-ray diffraction (XRD) and low-temperature photoluminescence (LTPL) analysis. A mercury probe was used to make non-contact CV/IV measurements and determine the film doping.
Download or read book One dimensional Numerical Investigation of the Chemical Vapor Deposition of Silicon Carbide in a Vertical Disk Reactor written by Chigozie Mbeledogu and published by . This book was released on 1989 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book One dimensional Numerical Investigation of the Chemical Vapor Deposition of Silicon Carbide in a Vertifcal Disk Reactor written by Chigozie Mbeledogu and published by . This book was released on 1989 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of 3C SiC on 111 Si Using Hot wall Chemical Vapor Deposition written by Christopher Locke and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The heteroepitaxial growth of cubic silicon carbide أ-سىأ) َُ(١١١) ٱىىٌك َُ(سى) ٱ�قٱفْٰمٰٱ، �ىف ف وىُْ“فَُٰ ٌو-ُٰ�ف ٌٌكومىٍكف ٌ�ف ُِْلمٱُِىىٰ َُ(أضؤ) مْفك،ُْٰ وفٱ قمم َفكوىم�مل. ا�ُْوٰ �فٱ كلَُ�كمٰل �ٱىهَ ف �ٰ ُٱمٰ ِكُِْمٱٱ: نىٱْ ٰوٰم سى ٱ�قٱفْٰمٰ ٱ�نْفكم ىٱ ك�َُممْٰل ُٰسىأ �ىف ف كفقْىَُ“فىٰ َُكُِْمٱٱ فلَ ٱمكلَُ وٰم ه�ُْوٰ نُ ٣أ-سىأ ىٱ مِنْمٍُْل َُوٰم ىىَىٰف ٌكفقْىَُ“مل فٌ”م.ْ ؤ�ىْهَ كفقْىَُ“فىٰ،َُ وٰم ٱ�نْفكم نُ وٰم سى ىٱ ك�َُممْٰل ُٰ٣أ-سىأ، �وىكو ومٱٌِ ُٰىٍىَىٍ“م وٰم ٱمْٰٱٱ ى َوٰم ه�ُْىهَ ك”ْٱفٰ.ٌ ذفُِْمَ (أ٣ب٨) فلَ ٱىفٌمَ (سىب٤)، لى�ٌمٰل ى َو”لهُْم َ(ب٢)، �ممْ �ٱمل فٱ وٰم كفقْ َُفلَ ٱىىٌك َُٱ�ُكْم، مْٱمِكىٰ�م”ٌ. ء لمٱُِىىٰ َُفْمٰ نُ ف٬ُِِْىفٍمٰ”ٌ ١٠ �ơ/ٍو �فٱ مٱفٰقىٌٱومل ل�ىْهَ وٰم ىىَىٰف ٌكُِْمٱٱ ف ٰف مٰمٍِفْ�ٰمْ نُ �١٣٨٠ ℗ʻأ. شوم ىُِٰىٍ“مل كُِْمٱٱ لُِْ�كمل نىٱٌٍ �ىوٰ ظ-فْ” كُْىًهَ ك��ْم ن�-ٌٌ�ىلوٰ ف ٰوفنٌ-فٍ٬ى�ٍ ٍ(ئطبح) �ف�ٌمٱ نُ ٢١٩ فكْٱمك، �وىكو ىٱ ٱىهىَنىكف”ٌَٰ قممٰٰ ْوٰف َف”َ وُٰم ْ�ِقىٌٱومل مْٱ�ٱٌٰ ى َوٰم ىٌمٰفْ�ٰمْ. دكَم وٰىٱ كُِْمٱٱ �فٱ لم�ممٌُِل ف �ٌُم ْمٰمٍِفْ�ٰمْ كُِْمٱٱ �فٱ لم�ممٌُِل ف ٰف ٱ�ٌُم ْه�ُْوٰ فْمٰ نُ �٢ �ơ/ٍو ف ٰ١٢٢٥ ℗ʻأ. شوم ك”ْٱفٰ ٌ�ّفىٌ”ٰ �فٱ ىنَمىْ ُْف ٰوٰم مْل�كمل مٰمٍِفْ�ٰمْ ق� ٰوٰىٱ مَ� كُِْمٱٱ ف�ٌٌُٱ ن ُْوٰم ه�ُْوٰ نُ ٣أ-سىأ(١١١) نىٱٌٍ َُ٬ُىلم مْمٌفٱم فٌ”مٱْ ن ُْحإحس فىٌِِكفىٰٱَُ. ة َفللىىٰ،َُ ن ُْممٌكىَُْٰك لم�ىكم فىٌِِكفىٰٱَُ، ف �ٌُم ْمٰمٍِفْ�ٰمْ كُِْمٱٱ مْل�كمٱ وٰم هممَفْىٰ َُنُ لمنمكٱٰ كف�ٱمل ق” وٰم مَف”ٌْ ٨ ٪ ىٍٱفٍكٰو ى َوٰم كمُننىكىم َٰنُ وٰمفٍْ ٌم٬فِٱَى َُ(أشإ) قم�ٰمم َ٣أ-سىأ فلَ سى. ئىفَ”ٌٌ ف مَ� كُِْمٱٱ �ٱىهَ ف ”ٌُِ-سى ٱممل فٌ”م ْلمٱُِىمٰل َُف َ٬ُىلم-كفُمٰل سى �فنم ْ�فٱ �ٱمل ُٰن ٍُْ٣أ-سىأ نىٱٌٍ ن ُْحإحس فىٌِِكفىٰٱَُ. شوم مْٱ�ٱٌٰ ىلَىكفمٰل ىىَىٰف”ٌٌ وٰف ٰوٰم نىٱٌٍ فٍ” م�م َقم كٍَُُ”ْٱفٰىٌٌمَ (قفٱمل َُظ-فْ” م�ف�ٌفىٰ)َُ ق� ٰفٌمٰ ْففَ”ٌٱىٱ مِنْمٍُْل �ٱىهَ شإح ىلَىكفمٰل وٰم” �ممْ وىهو”ٌ-لُْممْل ”ٌُِك”ْٱفٰىٌٌمَ نىٱٌٍ. شوم ه�ُْ َ٣أ-سىأ نىٱٌٍ �ممْ ففَ”ٌ“مل �ٱىهَ ف �فىْم”ٰ نُ كوففْكمٰىْ“فىٰ َُمٰكوىَ�ّمٱ. شوم وٰىكمًَٱٱ نُ وٰم نىٱٌٍ �فٱ فٱٱمٱٱمل وٰ�ُْهو ئ�ُىْم ْشفْٱَن ٍُْىنَفْمْل (ئشةز) ٱمِكٱُْٰك”ُِ، فلَ كنَُىمٍْل (ى َوٰم كفٱم نُ ه�ُْوٰ َُ”ٌُِ-سى ٱممل فٌ”مٱْ) ق” كٱُْٱ-ٱمكىٰ َُٱكفىََهَ ممٌك َُْٰىٍكٱُْك”ُِ (سإح). شوم سإح كٱُْٱ-ٱمكىٰٱَُ �ممْ فٱٌ ُ�ٱمل ُٰى�َمٱىٰهفمٰ وٰم ٣أ-سىأ/٬ُىلم ىمَٰنْفكم. شوم ٱ�نْفكم وٍُِْهٌُُ” نُ وٰم نىٱٌٍ �فٱ ىٱَمِكمٰل �ىف خفٍُٱْ”ً ىمَٰنْممْكَم ىُِٰكف ٌىٍكٱُْك”ُِ، فىٍُٰك نكُْم ىٍكٱُْك”ُِ (ءئح)، فلَ سإح. شوم ك”ْٱفٰىٌٌمَ �ّفىٌ”ٰ نُ وٰم نىٱٌٍ �فٱ لممٰىٍْمَل وٰ�ُْهو ظ-فْ” لىننفْكىٰ َُ(ظزؤ).
Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 1999-09-01 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.
Download or read book Chemical Vapor Deposition of Silicon Carbide written by Schyi-yi Wu and published by . This book was released on 1982 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Infiltration and Chemical Vapor Deposition of Silicon Carbide written by Shirish M. Gupte and published by . This book was released on 1990 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis of Silicon Carbide by Chemical Vapor Deposition written by T. Hirai and published by . This book was released on 1983 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition of Refractory Metals and Ceramics Volume 168 written by Theodore M. Besmann and published by . This book was released on 1990-04-11 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers originally presented at the symposium on [title] held in Boston, November/December 1989. The contributions are organized into six sections, covering fundamentals/modeling, diagnostics, process- microstructure relationships, microstructure-mechanical property relationships, novel/large-scale technologies, and metal-organic chemical vapor deposition. Acidic paper. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book The Growth and Characterization of Beta Silicon Carbide beta Sic Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Controlled Chemical Vapor Deposition of Silicon Carbide written by Jing-Jia Huang and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth and Characterization of Beta Silicon Carbide Sic Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor written by Kenneth George Irvine and published by . This book was released on 1992 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
