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Book Defect Recognition and Image Processing in Semiconductors 1997

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Book Processing and Microstructural Characterization of Reaction formed Silicon Carbide RFSC and Computer Simulations X ray Diffraction and High Resolution Transmission Electron Microscopy of Stacking Faults in Beta SiC

Download or read book Processing and Microstructural Characterization of Reaction formed Silicon Carbide RFSC and Computer Simulations X ray Diffraction and High Resolution Transmission Electron Microscopy of Stacking Faults in Beta SiC written by Vijay Vasant Pujar and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Characterization of Process induced Defects in 4H SiC

Download or read book Electrical Characterization of Process induced Defects in 4H SiC written by Shandirai Malven Tunhuma and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide has become an important material in the implementation of next generation photonics. It harbors the silicon vacancy (VSi) which can be transformed to a carbon antisite-vacancy pair (CSiVC) defect through thermal treatment. This defect has quantum functionality and can be used as a single photon source at room temperature. Using defect engineering, this technology is set to surpass advances made in other similar systems because it is being developed on existing standard industrial practices, fabrication protocols and mechanisms. These include techniques such as irradiation, annealing and ion implantation. The motivation of this work was to establish sound device fabrication protocols to be used in the device implementation. In this thesis DLTS and Laplace DLTS have been used to characterize deep level defects induced by various processes in 4H-SiC. Schottky barrier diodes were used to create the space charge region required to probe the defect characteristics using capacitance DLTS. From the DLTS and Laplace DLTS the activation energies of the defects were accurately deduced and the apparent capture cross section was calculated. The defect concentration was also quanti ed in the form of depth pro les plotted from the metal-semiconductor interface of the Schottky barrier diodes into the bandgap of the semiconductor. SEM, AFM and XRD were used to probe the changes in surface morphology and composition accompanying the processing steps whilst Raman spectroscopy was used to probe the nature of induced defects. Sputter deposition of tungsten on 4H-SiC was successfully used to induce the E0:69 which is the VSi. The identity of VSi was con rmed by thermal treatment and it annealed beyond detection at 600 C as expected. A previously unreported defect, the E0:29 was also observed after sputtering and was attributed to the heavy metal and gas ion residue from the deposition process. In order to transform the VSi into CSiVC, W/4H-SiC diodes were annealed up to 1100 C. This resulted in the formation of defects which were attributed to the interdi usion of silicides and carbides formed at the W/4H-SiC interface, as detected by XRD, migrating into the SiC. This was an unfavourable outcome for photonics applications where purity of the semiconductor is a major concern. As an alternative solution, the VSi was induced in 4H-SiC using 167 MeV, Xe26+ swift heavy ions. Xe is a noble gas therefore it would not react with the semiconductor. The structure and integrity of the lattice structure was conserved after irradiation as deduced from confocal Raman microscopy. The depth and concentration of the defects as observed in confocal Raman was consistent with SRIM simulations. AFM showed that the radiation introduced elongated protrusions on the surface of the semiconductor. The observations show that the silicon vacancy can be induced in 4H-SiC by standard industrial practices such as sputter deposition or ion irradiation.

Book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates

Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).

Book Characterization of Silicon Carbide Substrate Defects

Download or read book Characterization of Silicon Carbide Substrate Defects written by Benjamin D. Poust and published by . This book was released on 2004 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth and Characterization of Silicon Carbide on AIN Si

Download or read book Growth and Characterization of Silicon Carbide on AIN Si written by John H. Goldsmith and published by . This book was released on 2008 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial silicon carbide (SiC) was grown using chemical vapor deposition (CVD) on silicon substrates with Aluminum Nitride (AIN) buffer layers. Subsequent films where characterized by Raman Spectroscopy, Scanning Electron microscopy, Atomic Force microscopy, and X-ray diffraction. There is a large lattice mismatch between SiC and silicon, by introducing an AIN buffer layer, which has a close lattice match to SiC, the strain on the film is reduced and hence the density of defects is reduced. Trimethylsilane, an relatively inert alternative to silane, was used as the precursor providing both the required silicon and carbon atoms.

Book Defect Structure and Evolution in Silicon Carbide Irradiated to 1 Dpa SiC at 1100 C

Download or read book Defect Structure and Evolution in Silicon Carbide Irradiated to 1 Dpa SiC at 1100 C written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy (TEM), swelling measurements, isochronal annealing, and thermal diffusivity testing were used to characterize the effects of radiation damage in SiC. Together, these techniques provided a comprehensive set of tools for observing and characterizing the structure and evolution of radiation-induced defects in SiC as a function of irradiation temperature and dose. In this study, two types of dense, crystalline, monolithic SiC were subjected to irradiation doses up to 1 dpa-SiC at a temperature of 1100 C, as well as post-irradiation annealing up to 1500 C. The microscopic defect structures observed by TEM were correlated to changes in the macroscopic dimensions, thermal diffusivity and thermal conductivity. The results demonstrated the value of using ultrapure[beta]SiC as an effective reference material to characterize the nature of expected radiation damage in other, more complex, SiC-based materials such as SiC/SiC composites.

Book Structural Characterization of Hard Materials by Transmission Electron Microscopy TEM

Download or read book Structural Characterization of Hard Materials by Transmission Electron Microscopy TEM written by Chun-sŏk Park and published by . This book was released on 2008 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1975 with total page 978 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Silicon Carbide III nitrides and Related Materials

Download or read book Silicon Carbide III nitrides and Related Materials written by and published by . This book was released on 1998 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. PART 1: 1. SiC BULK GROWTH. 2. SiC EPITAXY. 2.1 Homoepitaxial Growth. 2.2 Heteroepitaxial Growth. 3. THEORY. 4. CHARACTERISATION OF SiC. 4.1 Surfaces and Interfaces. 4.2 Structural Characterisation. 4.3 Optical Characterisation. 4.4 Electrical Characterisation. 4.5 Magnetic Resonance Characterisation. 4.6 Thermal and Mechanical Properties. 5. MEASUREMENT TECHNIQUES. PART 2: 6. PROCESSING OF SiC. 6.1 Doping and Implantation. 6.2 Contacts and Etching. 6.3 Dielectrics. 6.4 Micromachining. 7. SiC DEVICES. 7.1 Surveys. 7.2 Unipolar Devices. 7.3 Bipolar Devices. 7.4 Sensors. 8. GROWTH OF III-NITRIDES. 9. CHARACTERISATION OF III-NITRIDES. 9.1 Structural Characterisation. 9.2 Optical Characterisation. 9.3 Electrical Characterisation. 10. PROCESSING OF III-NITRIDES. 11. III-NITRIDE DEVICES. 12. RELATED MATERIALS.

Book Silicon Carbide

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.