Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2001 with total page 842 pages. Available in PDF, EPUB and Kindle. Book excerpt: Theses on any subject submitted by the academic libraries in the UK and Ireland.

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Halide Perovskites written by Tze-Chien Sum and published by John Wiley & Sons. This book was released on 2019-03-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Real insight from leading experts in the field into the causes of the unique photovoltaic performance of perovskite solar cells, describing the fundamentals of perovskite materials and device architectures. The authors cover materials research and development, device fabrication and engineering methodologies, as well as current knowledge extending beyond perovskite photovoltaics, such as the novel spin physics and multiferroic properties of this family of materials. Aimed at a better and clearer understanding of the latest developments in the hybrid perovskite field, this is a must-have for material scientists, chemists, physicists and engineers entering or already working in this booming field.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Photovoltaic and Photoactive Materials written by Joseph M. Marshall and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this NATO Advanced Study Institute (ASI) was to present an up-to-date overview of various current areas of interest in the field of photovoltaic and related photoactive materials. This is a wide-ranging subject area, of significant commercial and environmental interest, and involves major contributions from the disciplines of physics, chemistry, materials, electrical and instrumentation engineering, commercial realisation etc. Therefore, we sought to adopt an inter disciplinary approach, bringing together recognised experts in the various fields while retaining a level of treatment accessible to those active in specific individual areas of research and development. The lecture programme commenced with overviews of the present relevance and historical development of the subject area, plus an introduction to various underlying physical principles of importance to the materials and devices to be addressed in later lectures. Building upon this, the ASI then progressed to more detailed aspects of the subject area. We were also fortunately able to obtain a contribution from Thierry Langlois d'Estaintot of the European Commission Directorate, describing present and future EC support for activities in this field. In addition, poster sessions were held throughout the meeting, to allow participants to present and discuss their current activities. These were supported by what proved to be very effective feedback sessions (special thanks to Martin Stutzmann), prior to which groups of participants enthusiastically met (often in the bar) to identify and agree topics of common interest.

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Download or read book Metal Impurities in Silicon and Germanium Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Download or read book Evolution of Silicon Sensor Technology in Particle Physics written by Frank Hartmann and published by Springer Science & Business Media. This book was released on 2008-12-01 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the post era of the Z and W discovery, after the observation of Jets at UA1 and UA2 at CERN, John Ellis visioned at a HEP conference at Lake Tahoe, California in 1983 “To proceed with high energy particle physics, one has to tag the avour of the quarks!” This statement re ects the need for a highly precise tracking device, being able to resolve secondary and tertiary vertices within high-particle densities. Since the d- tance between the primary interaction point and the secondary vertex is proportional tothelifetimeoftheparticipatingparticle,itisanexcellentquantitytoidentifypar- cle avour in a very fast and precise way. In colliding beam experiments this method was applied especially to tag the presence of b quarks within particle jets. It was rst introduced in the DELPHI experiment at LEP but soon followed by all collider - periments to date. The long expected t quark discovery was possible mainly with the help of the CDF silicon vertex tracker, providing the b quark information. In the beginning of the 21st century the new LHC experiments are beginning to take 2 shape. CMS with its 206m of silicon area is perfectly suited to cope with the high luminosity environment. Even larger detectors are envisioned for the far future, like the SiLC project for the International Linear Collider. Silicon sensors matured from small 1in. single-sided devices to large 6in. double-sided, double metal detectors and to 6in. single-sided radiation hard sensors.

Download or read book Handbook of Photovoltaic Science and Engineering written by Antonio Luque and published by John Wiley & Sons. This book was released on 2011-01-31 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The most comprehensive, authoritative and widely cited reference on photovoltaic solar energy Fully revised and updated, the Handbook of Photovoltaic Science and Engineering, Second Edition incorporates the substantial technological advances and research developments in photovoltaics since its previous release. All topics relating to the photovoltaic (PV) industry are discussed with contributions by distinguished international experts in the field. Significant new coverage includes: three completely new chapters and six chapters with new authors device structures, processing, and manufacturing options for the three major thin film PV technologies high performance approaches for multijunction, concentrator, and space applications new types of organic polymer and dye-sensitized solar cells economic analysis of various policy options to stimulate PV growth including effect of public and private investment Detailed treatment covers: scientific basis of the photovoltaic effect and solar cell operation the production of solar silicon and of silicon-based solar cells and modules how choice of semiconductor materials and their production influence costs and performance making measurements on solar cells and modules and how to relate results under standardised test conditions to real outdoor performance photovoltaic system installation and operation of components such as inverters and batteries. architectural applications of building-integrated PV Each chapter is structured to be partially accessible to beginners while providing detailed information of the physics and technology for experts. Encompassing a review of past work and the fundamentals in solar electric science, this is a leading reference and invaluable resource for all practitioners, consultants, researchers and students in the PV industry.

Download or read book Relaxation of Elementary Excitations written by R. Kubo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the Proceedings of the Taniguchi International Symposium on "Relaxation of Elementary Excitations" which was held October 12-16,1979, at Susono-shi (at the foot of f1t. Fuji) in Japan. The pleasant atmosphere of the Symposium is evidenced in the picture of the participants shown on the next page. The purpose of the symposium was to provide an opportunity for a limited number of active researchers to meet and to discuss relaxation processes and related phenomena not only of excitons and phonons in solids but also electronic and vibrational excitations in molecules and biological systems. First, the lattice relaxation, i.e., multi-phonon process, associated with electronic excitation, which plays important roles in self-trapping of an exciton and a particle (electron and hole) and also in degradation of semi conductor lasers, is discussed. Second, this lattice relaxation is studied as the intermediate state interaction in the second-order optical responses, i.e., in connection with the competitive behavior of Raman scattering and luminescence. Third, relaxation mechanisms and relaxation constants are by spectroscopic methods as well as by genuine nonlinear optical determined phenomena. Conversely the relaxation is decisive in coherent nonlinear optical phenomena such as laser, superradiance, and optical bistability. Fourth, the role played by relaxation processes is discussed for optical phenomena in macromolecules and biological system such as photosynthesis.