Download or read book Characterization of Growth Defects in Silicon Carbide Single Crystals by Synchrotron X ray Topography written by Shaoping Wang and published by . This book was released on 1995 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Crystal Growth Defects by X Ray Methods written by B.K. Tanner and published by Springer. This book was released on 1981-01-01 with total page 589 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Download or read book Defects in SiC Single Crystals and Their Influence on Device Performance written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project constituted an extensive program of research aimed at applying the techniques of Synchrotron White Beam X-ray Topography (SWBXT), Nomarski Optical Microscopy, Stereo Transmission Optical Microscopy and Scanning Electron Microscopy to the detailed analysis of defect structures in SiC crystals of various polytypes, and to determine how these defect structures can influence the performance of various kinds of device manufactured therein. It has served to establish a heightened awareness of the importance of a detailed understanding of growth defect microstructure to the future of SiC technology. Results obtained in this project have helped prioritize SiC crystal quality improvements. Two kinds of defect have been identified in 6H and 4H-SiC, basal plane dislocations, and dislocations with mostly screw component lying either at a small angle, or parallel, to the c-axis, with screw component of Burgers vector being equal to nc, where c is the lattice parameter. In 6H, dislocations with b greater than or equal 2c have hollow cores, the diameters of which conform to the theory of F.C. Frank. The same is true for dislocations in 4H with b greater than equal 3c. Preliminary results show that all such dislocations (from n=1 to n>8) can modify the I-V characteristics of diodes, giving rise to higher leakage currents and premature breakdown point-failures.
Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Download or read book In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals written by and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete chemical vapor deposition (CVD) system for growing SiC epitaxial films and bulk crystals was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. This CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases. The aggressive SiCl4 corrosion in the chamber and the gas lines has been investigated and found to be predominantly related to moisture, and this severe problem has been solved by keeping the gas lines and the growth reactor in vacuum or in inert atmosphere when the CVD system is not running.
Download or read book Crystal Growth Technology written by K. Byrappa and published by Springer Science & Business Media. This book was released on 2003-04-17 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Download or read book Characterization of Defects in 4H SiC Substrate Using Synchrotron White Beam X ray Topography written by Shreyas Krishna and published by . This book was released on 2004 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Defect Structures in 6H SiC A m plane Pseudofiber Crystals Grown by Hot wall CVD Epitaxy written by and published by . This book was released on 2015 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book ACCGE 2015 Abstracts eBook written by American Association for Crystal Growth (AACG) and published by Coe Truman International, LLC. This book was released on 2015-07-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.
Download or read book Semiconductor Characterization written by W. Murray Bullis and published by American Institute of Physics. This book was released on 1996 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.
Download or read book Silicon Carbide written by Peter Friedrichs and published by Wiley-VCH. This book was released on 2009-12-02 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Download or read book Growth and Characterization of Beta silicon Carbide Single Crystals written by Frank A. Halden and published by . This book was released on 1965 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melts. Well developed laths and plates were grown under conditions favoring dendritic growth mechanisms (low thermal gradient with moderate stirring). Polyhedral crystals grew under high thermal gradient conditions when high velocity stirring was employed. Three-dimensionaltype growth was also produced from a 73 wt percent ironsilicon alloy under conditions that normally produce lath-type growth. Uncorrected electron mobilities of 700 to 1000 sq cm/v-sec were measured at room temperature, and a few preliminary Hall measurements were made over the temperature range from 77 to 300 K. (Author).
Download or read book Vapor Growth and Characterization of Single Crystal Silicon Carbide written by Feng Liu and published by . This book was released on 2004 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Large High Purity Beta Silicon Carbide Single Crystals written by William R. Harding and published by . This book was released on 1970 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially established. Beta silicon carbide can be grown in the region of 2000-2200C and 28-42 microns pressure. Within this region, large beta crystals will grow by sublimation. Lang topographs of crystals were compared with etched surface structures and petrographic examination. Correlation among the results of these techniques was shown to exist. This analysis indicated the presence of large stacking faults within the structure as well as polytype intergrowths. Resistivity and Hall measurements were made with indications of highly compensated material. (Author).
