Download or read book Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Bruce McRae Green and published by . This book was released on 2001 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis of the Equivalent Circuit Model of the AIGaN GaN High Electron Mobility Transistor written by Chia-Hsuan Tsai and published by . This book was released on 2006 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1993 with total page 1146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1989 with total page 1016 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN Power Devices and Applications written by Alex Lidow and published by . This book was released on 2021-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed descriptions of the latest examples of GaN's usage in power supplies, lidar systems, motor drives, and space applications.

Download or read book High Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides