Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by . This book was released on 2020 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Download or read book Characterization of Some Technically Important Defects in Semiconductors written by Erik Meijer and published by . This book was released on 1982 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.

Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by . This book was released on 2007 with total page 631 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book Defect and Impurity Engineered Semiconductors II written by S. Ashok and published by Cambridge University Press. This book was released on 2014-06-05 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.

Download or read book Analytical Techniques for Semiconductor Materials and Process Characterization 6 ALTECH 2009 written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2009-09 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Electronic Characterization of Defects in Narrow Gap Semiconductors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-06 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method. Patterson, James D. Unspecified Center...

Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.