Download or read book Atomic Hydrogen Induced Defects in Amorphous Silicon written by Jie Zheng and published by . This book was released on 2010 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The motivation of this thesis is to provide quantitative insights into the microscopic interaction mechanisms between atomic hydrogen and hydrogenated amorphous silicon (a-Si:H), particularly the evolution kinetics of the electronic defect states during the interaction. a-Si:H thin films are grown on the total internal reflection surface of a folded miniature optical resonator by thermal decomposition of SiH4 on a hotwire, and are subjected to quantified atomic H fluxes at various substrate temperature. The H-induced defects during the process is monitored in situ by the Evanescent-Wave Cavity Ring-Down Spectroscopy (EW-CRDS), which allows to study the kinetics with a time resolution of 33 ms and sensitivity up to 0.1 ppm in the defect absorption change. The defect evolution process is characterized by a fast increase to a steady state when the H flux is turn on and reversible healing after the H flux is turned off. The effects of the H flux, substrate temperature, film structure and film thickness on the defect evolution process are investigated.

Download or read book Light Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.

Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Download or read book Theoretical Models for Metastable Photo induced Defects in Hydrogenated Amorphous Silicon written by Stanislaus Allan Zygmunt and published by . This book was released on 1984 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphous Silicon and Related Materials written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 742 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Download or read book Amorphous Silicon And Related Materials In 2 Parts written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 1153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.

Download or read book Research on the Structural and Electronic Properties of Defects in Amorphous Silicon written by and published by . This book was released on 1991 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work performed for this contract focused on the saturation of light-induced effects, hydrogen-mediated metastability and growth, defects and electronic properties, and remote hydrogen plasma growth. This work included research on hydrogen chemical reactions, hydrogen density-of-states model and metastability, hydrogen bonding configurations, a model for the role of hydrogen complexes in the metastability, and hydrogen chemical potential and growth structure. This document also covers research on thermal generation currents in p-i-n diodes, field dependence of the generation current, metastability effects at contacts, and potential fluctuations in compensated a-Si:H. Information is included on plasma diagnostics using electron spin resonance and nuclear magnetic resonance measurements of remote hydrogen plasma films.

Download or read book Photo Induced Metastability in Amorphous Semiconductors written by Alexander V. Kolobov and published by John Wiley & Sons. This book was released on 2006-12-13 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka

Download or read book Hydrogenated Amorphous Silicon written by H. Neber-Aeschbacher and published by Trans Tech Publications Ltd. This book was released on 1995-07-07 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

Download or read book Hydrogen in Disordered and Amorphous Solids written by Gust Bambakidis Jr. and published by Springer. This book was released on 2013-12-19 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the second volume in the NATO ASI series dealing with the topic of hydrogen in solids. The first (V. B76, Metal Hydrides) appeared five years ago and focussed primarily on crystalline phases of hydrided metallic systems. In the intervening period, the amorphous solid state has become an area of intense research activity, encompassing both metallic and non-metallic, e.g. semiconducting, systems. At the same time the problem of storage of hydrogen, which motivated the first ASI, continues to be important. In the case of metallic systems, there were early indications that metallic glasses and disordered alloys may be more corrosion resistant, less susceptible to embrittlement by hydrogen and have a higher hydrogen mobility than ordered metals or intermetallics. All of these properties are desirable for hydrogen storage. Subsequent research has shown that thermodynamic instability is a severe problem in many amorphous metal hydrides. The present ASI has provided an appropriate forum to focus on these issues.

Download or read book Light Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate

Download or read book Photo induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 1996-01-26 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough review of the properties of deep-level, localized defects in semiconductors.

Download or read book Investigation of Light Induced Defects in Hydrogenated Amorphous Silicon by Low Temperature Annealing and Pulsed Degradation written by Stephan Heck and published by . This book was released on 2002 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984-06-01 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts

Download or read book A Study of Hydrogen Induced Defects in Silicon Dioxide written by James Cullen Carroll and published by . This book was released on 1990 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hydrogenated Amorphous Silicon written by R. A. Street and published by Cambridge University Press. This book was released on 2005-09-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.