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Book Atmospheric Pressure Chemical Vapour Deposition of Vanadium Chromium and Titanium Oxides

Download or read book Atmospheric Pressure Chemical Vapour Deposition of Vanadium Chromium and Titanium Oxides written by Mark Nicholas Field and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Atmospheric Pressure Chemical Vapour Deposition of Vanadium Oxides

Download or read book Atmospheric Pressure Chemical Vapour Deposition of Vanadium Oxides written by and published by . This book was released on 2004 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Atmospheric Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Titanium Nitride and Titanium Dioxide Thin Films

Download or read book Atmospheric Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Titanium Nitride and Titanium Dioxide Thin Films written by Sarah R. Kurtz and published by . This book was released on 1985 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low temperature Chemical Vapour Deposition of Titanium Nitride

Download or read book Low temperature Chemical Vapour Deposition of Titanium Nitride written by Josephus Petrus Arnoldus Maria Driessen and published by . This book was released on 1999 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Magnetic Field assisted Chemical Vapor Deposition of Iron Vanadium and Titanium Oxides

Download or read book Magnetic Field assisted Chemical Vapor Deposition of Iron Vanadium and Titanium Oxides written by Daniel Stadler and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metalorganic Chemical Vapor Deposition of Titanium Oxide Thin Films at Atmospheric Pressure with Analysis Via X ray Photoelectron Spectroscopy

Download or read book Metalorganic Chemical Vapor Deposition of Titanium Oxide Thin Films at Atmospheric Pressure with Analysis Via X ray Photoelectron Spectroscopy written by Anuj K. Basil and published by . This book was released on 2005 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapour Deposition of Titanium and Vanadium Arsennide Thin Films

Download or read book Chemical Vapour Deposition of Titanium and Vanadium Arsennide Thin Films written by and published by . This book was released on 2011 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapour Deposition of Titanium and Vanadium Arsenide Thin Films

Download or read book Chemical Vapour Deposition of Titanium and Vanadium Arsenide Thin Films written by T. Thomas and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Pressure Chemical Vapor Deposition LPCVD of Titanium Nitride

Download or read book Low Pressure Chemical Vapor Deposition LPCVD of Titanium Nitride written by Sameer Narsinha Dharmadhikari and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.

Book An Investigation of the Temperature Distribution Induced During Laser Chemical Vapor Deposition LCVD of Titanium Nitride on Titanium aluminum vanadium

Download or read book An Investigation of the Temperature Distribution Induced During Laser Chemical Vapor Deposition LCVD of Titanium Nitride on Titanium aluminum vanadium written by Magdi Naim Azer and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$sb4,$ N$sb2,$ and H$sb2.$ Also, deposition has been studied as a function of the N$sb2$:H$sb2$ gas ratio, the TiCl$sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS). While the substrate temperature and the gas composition have the greatest influence on TiN film growth, H$sb2$ exerts the greatest influence on TiN film growth. Also, enhanced mass transport associated with localized laser beam heating has led to film growth rates on the order of 1 $mu$m/sec; however, there is still evidence of reactant depletion at the center of the laser heated spot. In addition to calculating film growth rates based on film height, two new methods of characterizing the film growth rate have been developed. Using these growth rates, three insights have been obtained. First, the film growth rates are 1-1/2 orders of magnitude greater than typical CVD deposition rates. Second, radial growth of the films continues after reactant depletion occurs at the center of the deposit. Third, comparison of the growth rates with LIF measurements supports the concept of a temperature-dependent sticking coefficient. Based on the experiments, reaction rate equations have been postulated as a function of N$sb2$/H$sb2$ gas ratio and TiCl$sb4$ partial pressure. Also, the apparent activation energy for deposition is 108.9 kJ/mol when one calculates the deposition rate based on film height. Using alternate definitions of film growth rates, the apparent activation energies are 65.2 and 81.4 kl/mol. The discrepancy in these activation energies has occurred because part of the measured film volume is actually TiCl$sb4$ rather than TiN.

Book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings

Download or read book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings written by P.L.F. Hemment and published by Newnes. This book was released on 2012-12-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation. Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.