Download or read book Application of Positron Annihilation Induced Auger Electron Spectroscopy in Measurements of Interface Defects and the Stability of Ultra thin Al Films Grown on GaAs 100 written by Wu-Chi Chen and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Submonolayer Films of Au Cu 100 and Pd Cu 100 Using Positron Annihilation Induced Auger Electron Spectroscopy written by Kuen-Ho Lee and published by . This book was released on 1992 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 1796 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index written by and published by . This book was released on 1989 with total page 1672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts Index written by and published by . This book was released on 1984 with total page 1034 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Compendium of Surface and Interface Analysis written by The Surface Science Society of Japan and published by Springer. This book was released on 2018-02-19 with total page 807 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book concisely illustrates the techniques of major surface analysis and their applications to a few key examples. Surfaces play crucial roles in various interfacial processes, and their electronic/geometric structures rule the physical/chemical properties. In the last several decades, various techniques for surface analysis have been developed in conjunction with advances in optics, electronics, and quantum beams. This book provides a useful resource for a wide range of scientists and engineers from students to professionals in understanding the main points of each technique, such as principles, capabilities and requirements, at a glance. It is a contemporary encyclopedia for selecting the appropriate method depending on the reader's purpose.
Download or read book Positrons in Solids written by P. Hautojärvi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.
Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book Particle Detectors written by Hermann Kolanoski and published by Oxford University Press. This book was released on 2020-06-30 with total page 949 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the fundamentals of particle detectors as well as their applications. Detector development is an important part of nuclear, particle and astroparticle physics, and through its applications in radiation imaging, it paves the way for advancements in the biomedical and materials sciences. Knowledge in detector physics is one of the required skills of an experimental physicist in these fields. The breadth of knowledge required for detector development comprises many areas of physics and technology, starting from interactions of particles with matter, gas- and solid-state physics, over charge transport and signal development, to elements of microelectronics. The book's aim is to describe the fundamentals of detectors and their different variants and implementations as clearly as possible and as deeply as needed for a thorough understanding. While this comprehensive opus contains all the materials taught in experimental particle physics lectures or modules addressing detector physics at the Master's level, it also goes well beyond these basic requirements. This is an essential text for students who want to deepen their knowledge in this field. It is also a highly useful guide for lecturers and scientists looking for a starting point for detector development work.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Chemical Imaging Analysis written by Freddy Adams and published by Elsevier. This book was released on 2015-06-06 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Imaging Analysis covers the advancements made over the last 50 years in chemical imaging analysis, including different analytical techniques and the ways they were developed and refined to link the composition and structure of manmade and natural materials at the nano/micro scale to the functional behavior at the macroscopic scale. In a development process that started in the early 1960s, a variety of specialized analytical techniques was developed – or adapted from existing techniques – and these techniques have matured into versatile and powerful tools for visualizing structural and compositional heterogeneity. This text explores that journey, providing a general overview of imaging techniques in diverse fields, including mass spectrometry, optical spectrometry including X-rays, electron microscopy, and beam techniques. Provides comprehensive coverage of analytical techniques used in chemical imaging analysis Explores a variety of specialized techniques Provides a general overview of imaging techniques in diverse fields
