EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Antimony Diffusion Into Silicon Through an Oxide Layer

Download or read book Antimony Diffusion Into Silicon Through an Oxide Layer written by Hsing-San Lee and published by . This book was released on 1960 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Concentration Profile of Diffused Radio active Antimony in a Silicon dioxide Layer

Download or read book The Concentration Profile of Diffused Radio active Antimony in a Silicon dioxide Layer written by Satya Pal Khanna and published by . This book was released on 1964 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity concentration in semi-conductor device technology. It is also recognized that the passivation of the silicon surface by the vitreous silicon dioxide envelope protects the underlying surface from damage during the diffusion process. Thus indirectly it helps in improving the device parameters, like current amplification factor, the reverse current and the breakdown voltage. In spite of its very wide application in device design the physics of the effect is hardly understood. Very little work has been done in this field. The mechanism of the chemical reduction of the impurity oxide in the silicon dioxide layer and its distribution therein should have a strong influence on the concentration of the impurity in silicon. The present endeavor was concerned with finding the distribution of antimony, one of the donor elements, in the oxide layer. The experimental evidence indicates that the migration of antimony through silicon dioxide is a diffusion controlled reaction and that its concentration profile can be broken up into two regions. The diffusion follows an approximate erfc distribution in the first region with diffusion constant = 7.40 x 10−15 cm2/sec. The second region, however, shows a saturation behavior.

Book Diffusion of impurities into silicon through an oxide layer

Download or read book Diffusion of impurities into silicon through an oxide layer written by Ohio State University. Research Foundation and published by . This book was released on 1961* with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book U S  Government Research Reports

Download or read book U S Government Research Reports written by and published by . This book was released on 1963 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Intrinsic Point Defects  Impurities  and Their Diffusion in Silicon

Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Book Integrated Silicon Device Technology  Diffusion

Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Diffusion of Impurities Into Silicon Through an Oxide Layer

Download or read book Diffusion of Impurities Into Silicon Through an Oxide Layer written by M. O. Thurston and published by . This book was released on 1963 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radioactive tracer measurements and theoretical calculations have been continued in an attempt to clarify the surface and interface conditions during diffusion of phosphorus into silicon through an oxide layer. (Author).

Book Army Research Task Summary

Download or read book Army Research Task Summary written by United States. Army Research Office and published by . This book was released on 1961 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Technical Abstract Bulletin

Download or read book Technical Abstract Bulletin written by Defense Documentation Center (U.S.) and published by . This book was released on 1961-10 with total page 1540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Army Research Task Summary  Physics

Download or read book Army Research Task Summary Physics written by United States. Army Research Office and published by . This book was released on 1961 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Si Silicon

    Book Details:
  • Author : Eberhard F. Krimmel
  • Publisher : Springer Science & Business Media
  • Release : 2013-11-11
  • ISBN : 3662099012
  • Pages : 417 pages

Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.

Book The Diffusion of Antimony in Heavily Doped N and P type Silicon

Download or read book The Diffusion of Antimony in Heavily Doped N and P type Silicon written by Richard B. Fair and published by . This book was released on 1986 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Diffusion of Metals in Silicon Dioxide

Download or read book Diffusion of Metals in Silicon Dioxide written by John David McBrayer and published by . This book was released on 1983 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapor Deposition

Download or read book Chemical Vapor Deposition written by John Milton Blocher and published by . This book was released on 1970 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Defects in Semiconductors

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Book Chemical Vapor Deposition     International Conference

Download or read book Chemical Vapor Deposition International Conference written by and published by . This book was released on 1970 with total page 878 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Army Research Task Summary

Download or read book Army Research Task Summary written by and published by . This book was released on 1961 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: