Download or read book Analysis of Silicide Formation written by Robert W. Bower and published by . This book was released on 1973 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contact formation in semiconductor integrated circuit technology involves deposition of one or more layers of metal 1000 to 10,000A thick on the surface of selected areas of Si. To form low resistance contacts, it is usually necessary to heat to temperatures between 400 and 600C. At these temperatures Si reacts with the metal film. The purpose of this study was to investigate these reactions. A review of silicide formation is included as an appendix. A survey of silicide formation for metal films deposited on Si indicates that the typical silicide that is formed is the phase that is most rich in Si. This is the end point one expects from thermodynamic equilibrium considerations. One recent observation is that metal rich silicides are formed when the metal layer is deposited on SiO2 rather than Si.

Download or read book A Study of Silicide Formation Using Tantalum Markers written by Mmantsae Welhemina Diale and published by . This book was released on 1997 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconducting Silicides written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.

Download or read book Laser Processing and Analysis of Materials written by Walter W. Duley and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: It has often been said that the laser is a solution searching for a problem. The rapid development of laser technology over the past dozen years has led to the availability of reliable, industrially rated laser sources with a wide variety of output characteristics. This, in turn, has resulted in new laser applications as the laser becomes a familiar processing and analytical tool. The field of materials science, in particular, has become a fertile one for new laser applications. Laser annealing, alloying, cladding, and heat treating were all but unknown 10 years ago. Today, each is a separate, dynamic field of research activity with many of the early laboratory experiments resulting in the development of new industrial processing techniques using laser technology. Ten years ago, chemical processing was in its infancy awaiting, primarily, the development of reliable tunable laser sources. Now, with tunability over the entire spectrum from the vacuum ultraviolet to the far infrared, photo chemistry is undergoing revolutionary changes with several proven and many promising commercial laser processing operations as the result. The ability of laser sources to project a probing beam of light into remote or hostile environments has led to the development of a wide variety of new analytical techniques in environmental and laboratory analysis. Many of these are reviewed in this book.

Download or read book Analysis of Semiconductor Structures by Nuclear and Electrical Techniques Silicide Formation written by Robert W. Bower and published by . This book was released on 1974 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents three studies of silicide formation in systems composed of single crystal silicon overlaid with a metal film. Common to all this work is the use of MeV He ion backscattering and glancing angle x-ray diffraction as the principal analytical tools. Backscattering data gives composition as a function of depth and hence can be used to determine growth kinetics while x-ray diffraction gives identification of phases and structural information. Work is reported in the following areas: Implanted noble gas atoms as diffusion markers in silicide formation; Structure and growth kinetics of Ni2Si on silicon; Iron silicide thin film formation at low temperatures.

Download or read book Study of the Mechanisms of Silicide Formation by Isotope Diffusion and Atom Probe Tomography written by Ting Luo and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the downscaling of microelectronic devices, NiSi has been widely used in complementary-metal-oxide-semiconductor (CMOS) transistors as contact on source, drain and gate. However, NiSi suffers from degradation upon annealing at high temperatures. Adding alloying elements is an effective method to increase the stability of nickel monosilicide but the formation sequence of Ni silicides is substantially modified. Therefore, the studies of the phase formation sequence and the stability of monosilicide are of great importance.The solid-state reactions between Ni films alloyed with W and/or Pt and Si substrates were studied mainly by in-situ X-ray diffraction (XRD) and atom probe tomography (APT) using combinatorial analysis of co-deposited gradient films. The phase sequence was monitored by in-situ XRD and APT was used to examine the silicides and reveal the redistribution of alloying elements. The content of alloying elements (W and Pt) has a large impact on the phase sequence of Ni silicides and the kinetics of phase formation. The basic agglomeration mechanism of NiSi thin films was studied. A 15nm pure Ni film was deposited on a Si substrate enriched with isotope multilayers. APT analyses were performed on the sample of Ni/Si (isotope) after an annealing at 600°C. By observing the distribution of Si isotopes (30Si, 29Si and 28Si), whether they maintain a multilayer structure or are mixed together, a mechanism of the agglomeration of NiSi was proposed. This was possible because of the unique capability of APT to observe isotopes in 3D at the atomic scale and it allows a better understanding and to control of the agglomeration of poly-crystalline compound thin films.

Download or read book Silicides Fundamentals Applications written by Francois D'heurle and published by World Scientific. This book was released on 2000-12-18 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.

Download or read book Thin Film Silicide Formation by Thermal Annealing written by Chuen-Der Lien and published by . This book was released on 1985 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A study of iron silicide formation on single crystalline silicon written by Kong-Chen Chen and published by . This book was released on 1981 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicide Technology for Integrated Circuits written by Institution of Electrical Engineers and published by IET. This book was released on 2004-12-21 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods. Suitable for engineers and students in microelectronics.

Download or read book Study on the kinetic modifications for titanium silicide formation process written by Hyoung Gin Nam and published by . This book was released on 1991 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Materials Analysis and Fabrication Process Control written by G.M. Crean and published by Elsevier. This book was released on 2012-12-02 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

Download or read book Metallic Films for Electronic Optical and Magnetic Applications written by Katayun Barmak and published by Woodhead Publishing. This book was released on 2014-02-13 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metallic films play an important role in modern technologies such as integrated circuits, information storage, displays, sensors, and coatings. Metallic Films for Electronic, Optical and Magnetic Applications reviews the structure, processing and properties of metallic films. Part one explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy. This part also encompasses the processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations. Chapters in part two focus on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties. Metallic Films for Electronic, Optical and Magnetic Applications is a technical resource for electronics components manufacturers, scientists, and engineers working in the semiconductor industry, product developers of sensors, displays, and other optoelectronic devices, and academics working in the field. - Explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy - Discusses processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations - Focuses on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties

Download or read book Ion Beam Surface Layer Analysis written by Otto Meyer and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: The II. International Conference on Ion Beam Surface Layer Analysis was held on September 15-19, 1975 at the Nuclear Research Center, Karlsruhe, Germany. The date fell between two related con ferences: "Application of Ion-Beams to Materials" at Warwick, Eng land and "Atomic Collisions in Solids" at Amsterdam, the Nether lands. The first conference on Ion Beam Surface Layer Analysis was held at Yorktown Heights, New York, 1973. The major topic of that and the present conference was the material analysis with ion beams including backscattering and channeling, nuclear reactions and ion induced X-rays with emphasis on technical problems and no vel applications. The increasing interest in this field was docu mented by 7 invited papers and 85 contributions which were presen ted at the meeting in Karlsruhe to about 150 participants from 21 countries. The oral presentations were followed by parallel ses sions on "Fundamental Aspects", "Analytical Problems" and "Appli cations" encouraging detailed discussions on the topics of most current interest. Summaries of these sessions were presented by the discussion leaders to the whole conference. All invited and contributed papers are included in these proceedings; summaries of the discussion sessions will appear in a separate booklet and are availble from the editors. The application of ion beams to material analysis is now well established.

Download or read book ISTFA 2010 written by and published by ASM International. This book was released on 2010-01-01 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Backscattering Spectrometry written by Wei-Kan Chu and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Backscattering Spectrometry reviews developments in backscattering spectrometry and covers topics ranging from instrumentation and experimental techniques to beam parameters and energy loss measurements. Backscattering spectrometry of thin films is also considered, and examples of backscattering analysis are given. This book is comprised of 10 chapters and begins with an introduction to backscattering spectrometry, what it can and what it cannot accomplish, and some ""rules of thumb"" for interpreting or reading spectra. The relative strengths and weaknesses of backscattering spectrometry in the framework of materials analysis are outlined. The following chapters focus on kinematics, scattering cross sections, energy loss, and energy straggling; backscattering analysis of thin films of various degrees of complications; the influence of beam parameters; and mass and depth resolutions and their relationships to the mass and energy of projectiles. Many examples of backscattering analysis are also presented to illustrate the capability and limitation of backscattering. Backscattering applications when combined with channeling effects are considered as well. The final chapter provides a list of references on the applications of backscattering spectrometry. This monograph will be a useful resource for physicists.

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.