Download or read book Analysis of Metal Oxide Thin Film Transistors with High k Dielectrics and Source drain Contact Metals written by Ahmed Kiani and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Films on Silicon written by Vijay Narayanan and published by . This book was released on 2016 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted."--Publisher's website.

Download or read book Metal Oxide Semiconductors written by Zhigang Zang and published by John Wiley & Sons. This book was released on 2023-12-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.

Download or read book Understanding the Enhanced Mobility of Solution Processed Metal Oxide Thin Film Transistors Having High k Gate Dielectrics written by Andre Zeumault and published by . This book was released on 2005 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited (PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2) also serve as the active layer in thin-film transistor (TFT) technology for modern liquidcrystal displays. Relative to a-Si:H and organic TFTs, commercial TCO TFTs have reduced off-state leakage and higher on-state currents. Additionally, since they are transparent, they have the added potential to enable fully transparent TFTs which can potentially improve the power efficiency of existing displays. In addition to PVD, solution-processing is an alternative route to the production of displays and other large-area electronics. The primary advantage of solution-processing is in the ability to deposit materials at reduced-temperatures on lower-cost substrates (e.g. glass, plastics, paper, metal foils) at high speeds and over large areas. The versatility offered by solution-processing is unlike any conventional deposition process making it a highly attractive emergent technology. Unfortunately, the benefits of solution-processing are often overshadowed by a dramatic reduction in material quality relative to films produced by conventional PVD methods. Consequently, there is a need to develop methods that improve the electronic performance of solution-processed materials. Ideally, this goal can be met while maintaining relatively low processing temperatures so as to ensure compatibility with low-cost roll-compatible substrates. Mobility is a commonly used metric for assessing the electronic performance of semiconductors in terms of charge transport. It is commonly observed that TCO materials exhibit significantly higher field-effect mobility when used in conjunction with high-k gate dielectrics (10 to 100 cm2 V−1 s −1 ) as opposed to conventional thermally-grown SiO2 (0.1 to 20 cm2 V−1 s −1 ). Despite the large amount of empirical data documenting this bizarre effect, its physical ori- 2 gin is poorly understood. In this work, the interaction between semiconductor TCO films and high-k dielectrics is studied with the goal of developing a theory explaining the observed mobility enhancement. Electrical investigation suggests that the mobility enhancement is due to an effective doping of the TCO by the high-k dielectric, facilitated by donor-like defect states inadvertently introduced into the dielectric during processing. The effect these states have on electron transport in the TCO is assessed based on experimental data and electrostatic simulations and is found to correlate with negative aspects of TFT behavior (e.g. frequency dispersion, gate leakage, hysteresis, and poor bias stability). Based on these findings, we demonstrate the use of an improved device structure, analogous to the concept of modulation doping, which uses the high-k dielectric film as an encapsulate, rather than a gate-dielectric, to achieve a similar doping effect. In doing so, the enhanced mobility of the TCO/high-k interface is retained while simultaneously eliminating the negative drawbacks associated with the presence of charged defects in the gate dielectrics (e.g. frequency dispersion, gate leakage, hysteresis, and poor bias stability). This demonstrates improved understanding of the role of solution-processed high-k dielectrics in field-effect devices as well as provides a practical method to overcome the performance degradation incurred through the use of low-temperature solution-processed TCOs.

Download or read book Proceedings of the Second Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1995 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. - A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications - Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries - The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics - Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM - Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned 'Moore's Law' relating to the technology development cycle in the semiconductor industry

Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphous Metal Oxide Semiconductor Thin Film Transistors for Printed Electronics written by Mustafa Mohammad Yousef and published by . This book was released on 2018 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is an acute market need for solution-processable semiconductor inks that can form the essential components of the printed analog and digital circuits. Currently, the industry is migrating beyond simply printing conductive metals for interconnects and embracing higher integration by printing transistors directly on the same substrate. This thesis focuses on investigating solution-processed amorphous indium gallium zinc oxide (IGZO) as a semiconducting channel layer of a field-effect transistor to enable low-cost, large-area printed electronics that are physically flexible and optically transparent. Specifically, we aim to achieve field-effect mobility exceeding 1 cm2/Vs, to overcome the limits faced in existing amorphous silicon and emerging organic transistor technologies, through optimizing IGZO ink and studying various thin-film processing conditions. Device approach using solution-processed, high-K aluminum oxide dielectric layer has also been examined in this study. In addition, the effect of low-temperature UV-assisted annealing has been studied which allow the fabrication to be compatible with plastic substrates.

Download or read book Thin Film Transistor Technologies TFTT VII written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Investigation of the Performance and Stability of Zinc Oxide Thin film Transistors and the Role of High k Dielectrics written by Ngwashi Divine Khan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exhibits excellent optical, electrical, catalytic and gas-sensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. Prior to the TFT fabrication, ZnO layers were sputtered on to glass and silicon substrates, and the deposition parameters optimised for electrical resistivities suitable for TFT applications. The sputtering process was carried out at room temperature with no intentional heating. The aim of this work is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. The structural quality of the material (defect type and concentration), electrical and optical properties (transmission/absorption) of semiconductor materials are usually closely correlated. Using the Vienna ab-initio simulation package (VASP), it is predicted that O2 adsorption may influence film transport properties only within a few atomic layers beneath the adsorption site. These findings were exploited to deposit thin films that are relatively stable in atmospheric ambient with improved TFT applications. TFTs incorporating the optimised layer were fabricated and demonstrated very impressive performance metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9? 3.2 V/dec. These were found to be dependent on film thickness (~15? 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), yttrium oxide (Y2O3) and hafnium oxide (HfO2)). In this work, prior to sputtering the ZnO layer (using a ZnO target of 99.999 % purity), the sputtering chamber was evacuated to a base pressure ~4 x 10-6 Torr. Oxygen (O2) and argon (Ar) gas (with O2/Ar ratio of varying proportions) were then pumped into the chamber and the deposition process optimised by varying the RF power between 25 and 500 W and the O2/Ar ratio between 0.010 to 0.375. A two-level factorial design technique was implemented to test specific parameter combinations (i.e. RF power and O2/Ar ratio) and then statistical analysis was utilised to map out the responses. The ZnO films were sputtered on glass and silicon substrates for transparency and resistivity measurements, and TFT fabrication respectively. For TFT device fabrication, ZnO films were deposited onto thermally-grown silicon dioxide (SiO2) or a high-k dielectric layer (HfO2, Gd2O3 and Y2O3) deposited by a metal-organic chemical deposition (MOCVD) process. Also, by using ab initio simulation as implemented in the?Vienna ab initio simulation package (VASP)?, the role of oxygen adsorption on the electrical stability of ZnO thin film is also investigated. The results indicate that O2 adsorption on ZnO layers could modify both the electronic density of states in the vicinity of the Fermi level and the band gap of the film. This study is complemented by studying the effects of low temperature annealing in air on the properties of ZnO films. It is speculated that O2 adsorption/desorption at low temperatures (150? 350 0C) induces variations in the electrical resistance, band gap and Urbach energy of the film, consistent with the trends predicted from DFT results.

Download or read book Investigation of Electrical Properties of Transition Metal Dichalcogenides Transistors with High k Dielectrics written by Peng Zhao and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, transition metal dichalcogenides (TMDs) have attracted intense attention due to their atomic layer-by-layer structure and unique electronic, optical and mechanical properties. Some of them, such as MoS2 and WSe2, have demonstrated satisfactory energy bandgap values and promising properties for future applications in electronics and optoelectronics. However, the relatively inert surface of these materials prevents the direct deposition of high-k dielectrics on these 2-D materials. Furthermore, capacitance-voltage (C-V) measurements of high-k dielectric on TMDs and interface defects analysis have not been researched sufficiently. In this dissertation, fabrication, electrical characterization, and simulation of top-gated few-layer TMD transistors are demonstrated with a major focus on interface property study of high-k/TMD. Top-gated capacitors on bulk MoS2 with 30 nm HfO2 and Al2O3 dielectrics are characterized with C-V and I-V measurements as the early work, showing the necessity of having a more robust test structure and an in-situ surface treatment to enable better interface assessment with quantitatively study. Top-gated few-layer MoS2 field effect transistors are fabricated using photolithographic patterning, with less than 10 nm thin ALD HfO2 on MoS2 after in-situ UV-O3 surface functionalization. C-V and I-V measurements are performed on these transistors. Interface defect density is extracted and analyzed from C-V measurement results. Annealing effects, such as cleaning effect of ultra-high vacuum annealing before high-k deposition, and N2 or a forming gas anneal after device fabrication are demonstrated as well. As a comparison, Al2O3/MoS2 interface is also investigated with/without anneals, and the simulation work demonstrates the energetic and spatial distributions of the interface traps. Furthermore, border traps, which are the dielectric traps close to the high-k/MoS 2 interface, are studied based on electrical characterization and simulation, along with the interface traps. The methodologies of fabrication and characterization are also extended to MoSe2, to understand the high-k/MoSe 2 interface and annealing effects. The electrical characterization and analysis in this dissertation reveal the high-k/TMD interfacial properties, which potentially helps find the origins of those defects and ultimately improves the electrical performance of the TMD devices by passivating the defects.

Download or read book Metal Oxides for Next generation Optoelectronic Photonic and Photovoltaic Applications written by Vijay Kumar and published by Elsevier. This book was released on 2023-09-15 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Next Generation Optoelectronic, Photonic and Photovoltaic Applications focuses on the optoelectronic, photonic and photovoltaic behaviors of metallic oxides and closely related phenomena, from elementary principles to the latest findings. Each chapter includes a comprehensive evaluation of the synthesis and characterization of the most relevant metal oxides nanostructures for each application. In addition, there is a focus on methods to tune the materials’ properties in order to improve devices performance. This book is suitable for researchers and practitioners in academia and industry working in the disciplines of materials science and engineering, chemistry and physics. Metal oxides are widely used in various optoelectronic devices, photonics, display devices, smart windows, sensors, optical components, energy-saving, and harvesting devices. Each application requires materials with their own specific properties. By controlling the particle size, shape, crystal structure, one can tune various properties of metal oxides viz. bandgap, absorption properties, conductivity, which alter the material for the specific application. Includes discussions of synthesis and characterization of metal oxides materials for applications in next-generation optoelectronic, photonic and photovoltaic devices Emphasizes material design strategies of metal oxide nanostructures Focuses on the optoelectronic, photonic and photovoltaic behaviors of metallic oxides and closely related phenomena, from elementary principles to the latest findings

Download or read book Semiconducting Metal Oxide Thin Film Transistors written by ZHOU and published by Myprint. This book was released on 2020-12-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study on Oxide Semiconductor Based Thin Film Transistors and Memories with High k Gate Dielectrics for System on Panel Applications written by 蘇迺超 and published by . This book was released on 2010 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Download or read book Oxide Thin Film Transistors written by K. J. Saji and published by Nova Science Publishers. This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.

Download or read book Contact Resistance and Stability Analysis of Oxide based Thin Film Transistors written by Celia M. Hung and published by . This book was released on 2006 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device performance is investigated. Both transistor and transfer length method (TLM) structures are used in the study and three material systems are employed: ZnO on SiO2, ZnO on aluminum titanium oxide (ATO), and IGO on SiO2. It is found that the measured resistance is not dominated by contact resistance effects. It is concluded that the device dimensions used in this study (i.e., gate lengths of 50 to 200 um)are too large to yield an accurate estimate of the contact resistance, since it is so small. Second, a methodology for assessing the stability of oxide-based TFTs is developed and implemented. This methodology involves constant voltage stressing over a maximum duration of 105 s (i.e., approx. 28 hours) and periodic evaluation of drain current-drain voltage and drain current-gate voltage characteristics during the stability test. This stability assessment strategy is first applied to three semiconducting materials: ZnO, zinc indium oxide (ZIO) and IGO, using thermal silicon oxide as the gate dielectric. Similar trends are observed for these device types. Relatively stable devices are obtained after post-deposition annealing at a temperature of approx. 600 degrees C for ZnO and IGO TFTs, and approx. 400 degrees C for ZIO TFTs. The presence of instability in these devices, which is more pronounced at a lower annealing temperature, results in a positive shift in the turn-on voltage and clockwise hysteresis in the drain current-gate voltage transfer curve. Such an instability is attributed to electron trapping near the channel/insulator interface. The stability a ZnO TFT fabricated using a spin-coat synthesized aluminum phosphate (AlPO) as the gate dielectric is also investigated. The ZnO/AlPO TFT showed distinctively different stability trends. This device is observed to be very unstable with a negative shift in the turn-on voltage and counter-clockwise hysteresis in the drain current-gate voltage transfer curve. The mechanism for this instability is ascribed to insulator ion drift. It is shown that stable TFTs can be fabricated with oxide-based channel layers if a high quality insulator, such as thermal silicon dioxide, is available and if a post-deposition anneal at an elevated temperature is employed.