Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research in Progress written by and published by . This book was released on 1983 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.

Download or read book Solar Energy Update written by and published by . This book was released on 1986 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on 1987 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index written by and published by . This book was released on 1984 with total page 1316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1987 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book INIS Atomindex written by and published by . This book was released on 1995 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1983 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2018 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1989 Spring Meeting written by Materials Research Society. Fall Meeting and published by . This book was released on 1989 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Two step MOVPE in situ etching and buried implantation applications to the realization of GaAs laser diodes written by Pietro della Casa and published by Cuvillier Verlag. This book was released on 2021-03-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.