Download or read book An Investigation of the Temperature Distribution Induced During Laser Chemical Vapor Deposition LCVD of Titanium Nitride on Titanium aluminum vanadium written by Magdi Naim Azer and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: To understand how the substrate temperature influences the deposition rate and spatial profile of deposits formed using laser chemical vapor deposition (LCVD), spatially resolved multi-wavelength pyrometry measurements of the substrate temperature have been made during LCVD of titanium nitride (TiN) on Ti-6Al-4V substrates. The precursors that have been used are TiCl$sb4,$ N$sb2,$ and H$sb2.$ Also, deposition has been studied as a function of the N$sb2$:H$sb2$ gas ratio, the TiCl$sb4$ partial pressure, the total chamber pressure, and the laser power. Also, film thickness has been measured by stylus profilometry, and film composition and microstructure have been determined by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and X-ray Photoelectron Spectroscopy (XPS). While the substrate temperature and the gas composition have the greatest influence on TiN film growth, H$sb2$ exerts the greatest influence on TiN film growth. Also, enhanced mass transport associated with localized laser beam heating has led to film growth rates on the order of 1 $mu$m/sec; however, there is still evidence of reactant depletion at the center of the laser heated spot. In addition to calculating film growth rates based on film height, two new methods of characterizing the film growth rate have been developed. Using these growth rates, three insights have been obtained. First, the film growth rates are 1-1/2 orders of magnitude greater than typical CVD deposition rates. Second, radial growth of the films continues after reactant depletion occurs at the center of the deposit. Third, comparison of the growth rates with LIF measurements supports the concept of a temperature-dependent sticking coefficient. Based on the experiments, reaction rate equations have been postulated as a function of N$sb2$/H$sb2$ gas ratio and TiCl$sb4$ partial pressure. Also, the apparent activation energy for deposition is 108.9 kJ/mol when one calculates the deposition rate based on film height. Using alternate definitions of film growth rates, the apparent activation energies are 65.2 and 81.4 kl/mol. The discrepancy in these activation energies has occurred because part of the measured film volume is actually TiCl$sb4$ rather than TiN.
Download or read book An Investigation of the Temperature Distribution Induced During Laser Chemical Vapor Deposition LCVD of Titanium Nitride TiN on Ti 6Al 4V written by Magdi Naim Azer and published by . This book was released on 1996 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics with Laser Induced Fluorescence Spectroscopy written by Xiangli Chen and published by . This book was released on 1994 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1986 with total page 914 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 1990 with total page 2210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition written by Keith Maynard Egland and published by . This book was released on 1997 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser induced chemical vapor deposition of titanium diboride written by Job Elders and published by . This book was released on 1992 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser Induced Chemical Vapor Deposition of Thin Films written by Joseph Zahavi and published by . This book was released on 1995 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report results from a contract tasking Technion as follows: Investigate the characteristics of thin silicon nitride films deposited on substrates via the use of chemical laser deposition techniques. This report summarized the research activities during the first year of work as was planned in the proposal. It completes the information which was given in the previous two progress reports. Basically, the aim of the first year was to study the possibility of deposition of silicon nitride thin films from silane and ammonia at low temperatures. The investigation was carried out by studying the effect of substrate temperature on deposition rate and film quality. In addition, the photochemical reaction was studied by analyzing the composition of gas molecules prior and during laser irradiation. At the end of the first year it was also possible to start doing experiments for deposition of silicon carbide from silane and acetylene.
Download or read book Thermal and Dynamic Processes in Deposition Growth and Etching of Materials written by Shrikant Prabhakar Lohokare and published by . This book was released on 1996 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposition (CVD) is becoming an increasingly important manufacturing process for the fabrication of VLSI and ULSI devices. A major challenge in optimizing a CVD process is developing an understanding of the complex mechanistic pathways followed. The first section in this thesis reports studies on the thermal and dynamical activation of surface bound alkyl species which play a vital role in the form of intermediates in metal-organic chemical vapor deposition. The particular systems of interest are those of aluminum CVD precursors. Models of these intermediates are obtained by thermal decomposition of alkyl iodides. The results provide an insight into the complex reaction patterns involved in the thermal reactions and rate-structure sensitivities of the alkyl species in the presence of the coadsorbed halogen atom. Multiple reaction pathways including metal etching processes which bear direct implications to the synthesis of organometallics and metal etching, are identified. It is becoming apparent that chemistry at surfaces, whether it be heterogeneous catalysis, semiconductor etching, or chemical vapor deposition, is controlled by much more than the nature and structure of the surface. Also, nonthermal activation of autocatalytic reactions is often required for the nucleation and growth of thin films in devices so that the stability of the device structure is maintained. Dynamical pathways followed in these high pressure and energy processes have to be well understood. The second part of these studies describe an investigation of collision-induced reaction of alkyl intermediates using supersonic inert gas atomic beams. Selective activation of a thermodynamically favored unimolecular decomposition reaction is initiated by hyperthermal collisions. Quantitative estimations of the reaction cross sections are made using straightforward hard sphere energy transfer dynamics. This successful demonstration of collision-induced activation of large, multiatomic moieties has paved the way for proposed studies (now underway in our group) on actual CVD precursors with known barriers to nucleation and growth. In the second section, the reaction mechanisms and kinetics of competitive dissociation, disproportionation, and thin film growth processes involved in the chemical vapor deposition of metal-silicide thin films are investigated. Metal-silicides are widely used as interconnect and gate materials in devices and also as corrosion resistant materials. Reactivity of silane and disilane with copper is studied in detail using temperature programmed reaction, Auger electron, Fourier transform infrared reflection absorption spectroscopies and low energy electron diffraction. For both the precursors, the structural chemistry and product distributions of adsorbed intermediates found at low temperatures are quite rich but significantly differ at the mechanistic level. It is shown quantitatively that disilane is almost 2-3 orders of magnitude more reactive than silane due to its facile Si-Si bond dissociation. However, in both cases, kinetics of silicon deposition and silicide formation are limited by the site-blocking effect of surface bound hydrogen generated by the decomposition of the silyl fragments. An ordered silicide overlayer is readily formed at higher coverages effected above dihydrogen desorption temperatures. This bimolecular process has to compete with an associative reaction which leads to the formation of silane. The results obtained from the different spectroscopic data show that the growth process involves an intriguing set of coupled reactions in which deposition, island growth, and Si etching effectively compete in a complex manner. Understanding of these parameters and the reaction mechanisms involved, enables the application of this process for the vapor phase growth of silicide thin films.
Download or read book Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films written by Polly Wanda Chu and published by . This book was released on 1994 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Download or read book Multi length Scale Analysis of Chemical Vapor Deposition CVD of Diamond and Titanium Nitride Films written by Shugang Lai and published by . This book was released on 2000 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Pressure Chemical Vapor Deposition LPCVD of Titanium Nitride written by Sameer Narsinha Dharmadhikari and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Download or read book Laser Enhanced Chemical Vapor Deposition of Aluminum Nitride Films written by Lance Robert Thompson and published by . This book was released on 1986 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book THE LOW TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE CHEMICAL VAPOR DEPOSITION written by JEFFREY L. DUPUIE and published by . This book was released on 1991 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: deposition scheme holds much promise for low temperature film growth.
Download or read book Plasma Assisted Synthesis and Physical Chemical Characterization of Titanium Nitride Films written by Michael Robert Hilton and published by . This book was released on 1987 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1995 with total page 1302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CRC Handbook of Metal Etchants written by Perrin Walker and published by CRC Press. This book was released on 1990-12-11 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
